INA333AIDGKR vs AD8251ARMZ 比較

詳細並排比較 INA333AIDGKR 由 Texas Instruments 與 AD8251ARMZ 由 Analog Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
INA333AIDGKR INA333AIDGKR - 50uA Zero-Drift INA | Texas Instruments

INA333AIDGKR - 50uA Zero-Drift INA | Texas Instruments

INA333AIDGKR ✓ 啟用中
Analog Devices
AD8251ARMZ AD8251ARMZ - 10MHz iCMOS Programmable Gain In-Amp | ADI

AD8251ARMZ - 10MHz iCMOS Programmable Gain In-Amp | ADI

AD8251ARMZ ✓ 啟用中

規格比較

參數 INA333AIDGKR AD8251ARMZ
品牌 Texas Instruments Analog Devices
類別 Amplifier ICs Amplifier ICs
生命週期狀態 啟用中 啟用中
Product Type Precision zero-drift instrumentation amplifier —
Architecture 3-operational-amplifier —
Number of Channels 1 channel —
Supply Voltage Range 1.8 V to 5.5 V ±5 V to ±15 V
靜態電流 50 uA typical —
Input Offset Voltage 10 uV typical —
Gain Range 1 to 1000 —
Gain Equation G = 1 + 100 kΩ/RG —
Bandwidth 150 kHz —
Slew Rate 0.16 V/us 20 V/µs (minimum)
輸出類型 Rail-to-rail output —
Input Filtering RFI-filtered inputs —
工作溫度範圍 -40 C to +125 C -40°C to +85°C
封裝 8-pin VSSOP (DGK) 10-lead MSOP
安裝類型 Surface mount Surface Mount
Compliance [DATA_NEEDED: RoHS, REACH, and lead-free status] —
Amplifier Type — Instrumentation Amplifier
Number of Circuits — 1
Programmable Gain Values — 1, 2, 4, 8
Gain Setting Method — Digital (parallel logic) or transparent gain-pin
Input Impedance — GΩ
Settling Time (0.001%) — 785 ns (maximum)
Bandwidth (-3 dB) — 10 MHz
CMRR (G=8, DC) — 98 dB (minimum)
Gain Drift — 10 ppm/°C (maximum)
Offset Drift (G=8) — 1.8 µV/°C (maximum)
Total Harmonic Distortion (THD) — -110 dB
Quiescent Current (typical) — [DATA_NEEDED: quiescent current value]
MSL 等級 — 1 (unlimited)
RoHS 狀態 — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED]

資料表與資源

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