IPB020N10N5ATMA1 vs BSC014N04LSIATMA1 比較
詳細並排比較 IPB020N10N5ATMA1 由 Infineon 與 BSC014N04LSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB020N10N5ATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB020N10N5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench, thin-wafer) |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Maximum Drain Current (ID max, per Infineon product page) | 176 A | — |
| On-Resistance RDS(on) max | 2 mΩ | — |
| Power Dissipation (PD) at Tc | 375 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| 封裝 | PG-TO263-3 (D2PAK-3) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C | -55 C to +150 C |
| Channel Type | N-Channel | — |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| RoHS 狀態 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |