IPD090N03LGATMA1 vs BSC0504NSIATMA1 比較

詳細並排比較 IPD090N03LGATMA1 由 Infineon 與 BSC0504NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD090N03LGATMA1 IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 ✓ 啟用中

規格比較

參數 IPD090N03LGATMA1 BSC0504NSIATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 40 A —
Continuous Drain Current (Id) @ Tc=100C [DATA_NEEDED: Id at 100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Id] —
Maximum Power Dissipation (Pd) @ Tc=25C 42 W —
On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A 9 mOhm (typical) —
On-State Resistance (Rds(on)) @ Vgs=4.5V [DATA_NEEDED: Rds(on) at 4.5V] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
工作溫度範圍 -55C to +175C (junction) [DATA_NEEDED: operating temperature range]
封裝 PG-TO252-3-11 (DPAK) PG-TDSON-8-6
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) —
RoHS 狀態 Compliant unknown
Technology Family OptiMOS 30V OptiMOS 5
Configuration Single —
電晶體類型 — N-channel MOSFET
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
腳位數 — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
閘極臨界電壓 — [DATA_NEEDED: gate threshold voltage]
熱阻 — [DATA_NEEDED: thermal resistance]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

資料表與資源

瀏覽所有產品 建立 BOM 索取報價