IPD50P04P4L11ATMA2 vs IPD50P04P413ATMA2 比較
詳細並排比較 IPD50P04P4L11ATMA2 由 Infineon 與 IPD50P04P413ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD50P04P4L11ATMA2 | IPD50P04P413ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | P-Channel MOSFET, enhancement mode | — |
| Drain-Source Voltage VDS | -40 V | — |
| Continuous Drain Current ID (TC = 25 °C) | -50 A | — |
| On-State Resistance RDS(on) (VGS = -10 V) | 10.6 mΩ typical | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -2.5 V typical | — |
| Typical Gate Charge Qg | 45 nC | — |
| Power Dissipation PD (TC = 25 °C) | 58 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | PG-TO252-3-313 (DPAK), surface mount | PG-TO252-3-313 (DPAK) |
| 腳位數 | 3 (Drain / Tab / Source / Gate) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 |
| Polarity / Device Type | — | P-Channel MOSFET |
| Technology | — | OptiMOS-P2 (Trench) |
| Drain-Source Voltage (VDS) | — | -40 V |
| Continuous Drain Current (TC=25°C, ID) | — | 50 A |
| Continuous Drain Current (TC=100°C, ID) | — | [DATA_NEEDED: ID @ 100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Power Dissipation (TC=25°C, Ptot) | — | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | — | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Maximum Junction Temperature (TJ,max) | — | 175 °C |
| 工作溫度範圍 | — | -55 °C to +175 °C |
| Standard Pack Quantity (13" reel) | — | 2500 pcs |
| RoHS 狀態 | — | Compliant |