IPN60R2K0PFD7SATMA1 vs IPD60R210PFD7SAUMA1 比較
詳細並排比較 IPN60R2K0PFD7SATMA1 由 Infineon 與 IPD60R210PFD7SAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon
IPD60R210PFD7SAUMA1 ✓ 啟用中規格比較
| 參數 | IPN60R2K0PFD7SATMA1 | IPD60R210PFD7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS PFD7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (Tc) | 3 A | — |
| Power Dissipation (Tc) | 6 W | — |
| RDS(on) typical @ VGS=10V | 2.0 Ohm | — |
| RDS(on) max @ VGS=10V | 1.626 Ohm (per Infineon product page) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.8 nC @ 10 V (per UTMel listing) | — |
| Input Capacitance (Ciss) | 134 pF @ 400 V (per UTMel listing) | — |
| Technology | CoolMOS superjunction | Superjunction (CoolMOS) N-Channel Power MOSFET |
| 封裝 | PG-SOT223-3-1 (SOT-223) | — |
| 安裝類型 | Surface Mount | Surface Mount (SMT) |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55C to +150C (TJ) |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| RoHS 狀態 | Compliant (per Newark listing) | — |
| Product Family | — | CoolMOS PFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc) | — | 16 A |
| On-Resistance (RDS(on), max) | — | 210 mOhm |
| Power Dissipation (Ptot, Tc=25C) | — | 64 W |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Package Type | — | TO-252 (DPAK) |
| Manufacturer Package Designator | — | PG-TO252-3-344 |
| Pin Configuration | — | 3-Pin (2+Tab) - Gate, Drain (tab), Source |
| Lead-Free / RoHS | — | Yes (compliant) |
| Application Segment | — | Consumer-grade SMPS |