ISA250300C04LMDSXTMA1 vs AUIRF7640S2TR 比較

詳細並排比較 ISA250300C04LMDSXTMA1 由 Infineon 與 AUIRF7640S2TR 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 ✓ 啟用中

規格比較

參數 ISA250300C04LMDSXTMA1 AUIRF7640S2TR
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (N+P array) —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current N-channel 5.9 A (Ta), 7.9 A (Tc) —
Continuous Drain Current P-channel 5.8 A (Ta), 7.8 A (Tc) —
Power Dissipation 1.4 W (Ta), 2.5 W (Tc) —
封裝 SO-8 (PG-DSO-8-920) DirectFET SB (Surface Mount)
安裝類型 Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 3) HEXFET Power MOSFET (Automotive Grade)
Packaging Tape & Reel (suffix XTMA1) —
Datasheet Document Infineon ISA250300C04LMDS datasheet (per Infineon product page) —
工作溫度範圍 [DATA_NEEDED: operating temperature range] -40C to +150C [DATA_NEEDED: junction temp upper limit]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range per channel] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) per channel at specified VGS] 36 mΩ
RoHS 狀態 Compliant Compliant [DATA_NEEDED: confirmed in datasheet]
Lead-Free Yes —
FET Type — N-Channel
Continuous Drain Current (ID) @ TA=25C — 5.8 A
Continuous Drain Current (ID) @ TC=25C — 21 A
Power Dissipation (PD) @ TA=25C — 2.4 W
Power Dissipation (PD) @ TC=25C — 30 W
Total Gate Charge (Qg) — 7.3 nC
Automotive Qualification — AEC-Q101 (Automotive Grade per datasheet)
Primary Application — Automotive Class D audio amplifier output stage

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