ISZ173N15NM6ATMA1 vs BSC050N04LSGATMA1 比較
詳細並排比較 ISZ173N15NM6ATMA1 由 Infineon 與 BSC050N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISZ173N15NM6ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 150V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7.9 A | — |
| Continuous Drain Current (ID) at Tc | 48 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 94 W | — |
| Technology | OptiMOS 6 trench-gate MOSFET | OptiMOS 3 (trench MOSFET) |
| 封裝 | PG-TSDSON-8 FL | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | — |
| Application | Hard and soft switching, high/low frequency | — |
| Lead-Free | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Tape & Reel Quantity | 5000 | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| 工作溫度範圍 | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| MSL 等級 | — | 1 |