K3K8K80BM-JGCT vs K3KL2L20DM-JGCT 比較
詳細並排比較 K3K8K80BM-JGCT 由 Samsung Electronics 與 K3KL2L20DM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 啟用中
規格比較
| 參數 | K3K8K80BM-JGCT | K3KL2L20DM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| 記憶體類型 | Low Power DRAM (LPDDR) component | LPDDR5X SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 48 Gb |
| 組織 | [DATA_NEEDED: x8/x16 organization] | x64 |
| 介面 | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5X (JEDEC low-power DRAM interface) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | 0.5 V |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance] | unknown |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| 資料速率 | — | 7500 Mbps |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Core Voltage Rail | — | 0.9 V |
| 封裝 | — | 441-ball FBGA |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |