K3KL1L10GM-JGCT vs K3KL7L70EM-MGCU 比較
詳細並排比較 K3KL1L10GM-JGCT 由 Samsung Electronics 與 K3KL7L70EM-MGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung
K3KL7L70EM-MGCU ✓ 啟用中規格比較
| 參數 | K3KL1L10GM-JGCT | K3KL7L70EM-MGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X DRAM (SDRAM) | LPDDR5X SDRAM |
| Density | 32 Gb (4 GB) | 12 Gbit (1.5 GB) |
| Interface Organization | x64 | — |
| 資料速率 | LPDDR5X-7500 (up to 7500 MT/s) | [DATA_NEEDED: data rate Mbps/pin] |
| Generation | LPDDR5X (premium low-power DRAM) | — |
| Speed vs Previous Generation | Up to 1.25x faster than LPDDR5 | — |
| Power Efficiency vs Previous Generation | Approximately 25% better than LPDDR5 | — |
| 封裝 | 441-ball FBGA | 315-ball FBGA |
| 安裝類型 | Surface Mount (soldered-down BGA) | Surface Mount |
| Application Class | AI edge devices, in-vehicle devices, flagship mobile | — |
| 供應電壓 | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Latency | [DATA_NEEDED: CAS latency / tRCD / tRP timings] | — |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Manufacturer | — | Samsung Electronics |
| Speed Grade Suffix | — | -MGCU |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD core voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ I/O voltage] |
| 組織 | — | [DATA_NEEDED: organization x32] |
| Bank Architecture | — | [DATA_NEEDED: bank group count] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self-refresh and per-bank refresh per JEDEC LPDDR5X |
| Termination | — | On-Die Termination (ODT) |