K3KL3L30CM-BGCT vs K3KL1L10GM-JGCT 比較

詳細並排比較 K3KL3L30CM-BGCT 由 Samsung Electronics 與 K3KL1L10GM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K3KL3L30CM-BGCT K3KL3L30CM-BGCT - LPDDR5X-7500 64Gb DRAM | Samsung

K3KL3L30CM-BGCT - LPDDR5X-7500 64Gb DRAM | Samsung

K3KL3L30CM-BGCT ✓ 啟用中
Samsung Electronics
K3KL1L10GM-JGCT K3KL1L10GM-JGCT - 32Gb LPDDR5X-7500 DRAM | Samsung

K3KL1L10GM-JGCT - 32Gb LPDDR5X-7500 DRAM | Samsung

K3KL1L10GM-JGCT ✓ 啟用中

規格比較

參數 K3KL3L30CM-BGCT K3KL1L10GM-JGCT
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs DRAM
生命週期狀態 啟用中 啟用中
記憶體類型 LPDDR5X SDRAM LPDDR5X DRAM (SDRAM)
Density 64 Gbit 32 Gb (4 GB)
組織 x64 —
Speed Grade LPDDR5X-7500 (7500 MT/s) —
Technology Stacked DRAM die, mobile BGA —
安裝類型 Surface Mount (BGA) Surface Mount (soldered-down BGA)
封裝 [DATA_NEEDED: exact package code and ball count] 441-ball FBGA
Core Voltage [DATA_NEEDED: VDD core voltage] —
I/O Voltage (VDDQ) [DATA_NEEDED: VDDQ voltage] —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh [DATA_NEEDED: refresh scheme] —
Standards Compliance JEDEC LPDDR5X specification —
RoHS 狀態 [DATA_NEEDED: RoHS status] unknown
MSL 等級 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Application Class Mobile / embedded main memory AI edge devices, in-vehicle devices, flagship mobile
Interface Organization — x64
資料速率 — LPDDR5X-7500 (up to 7500 MT/s)
Generation — LPDDR5X (premium low-power DRAM)
Speed vs Previous Generation — Up to 1.25x faster than LPDDR5
Power Efficiency vs Previous Generation — Approximately 25% better than LPDDR5
供應電壓 — [DATA_NEEDED: VDD/VDDQ supply voltage]
Access Latency — [DATA_NEEDED: CAS latency / tRCD / tRP timings]
Refresh Rate — [DATA_NEEDED: refresh specification]

資料表與資源

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