K3KL3L30CM-BGCU vs K3KL5L50DM-BGCU 比較
詳細並排比較 K3KL3L30CM-BGCU 由 Samsung Electronics 與 K3KL5L50DM-BGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3KL3L30CM-BGCU | K3KL5L50DM-BGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM (Volatile DRAM) | LPDDR5X SDRAM |
| 記憶體容量 | 64 Gb (8 GB) | — |
| 資料速率 | 8533 Mbps | 8533 Mbps per pin |
| Memory Organization | x64 | — |
| Technology | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) | — |
| 封裝 | FBGA-496 (BGCU) | [DATA_NEEDED: package ball count / FBGA code] |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| Die Configuration | Stacked multi-die DRAM | — |
| 介面 | LPDDR5X (standard LPDDR ball interface) | LPDDR5X (JEDEC low-power DRAM interface) |
| Application Segment | AI devices and automotive | — |
| Power Efficiency | Approx. 25% better than previous LPDDR5 generation (per Samsung) | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) |
| Speed Improvement | Up to 1.25x faster than previous generation (per Samsung) | — |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| Place of Origin (per distributor listing) | Johor, Malaysia | — |
| Density | — | 128 Gb (16 GB) |
| 組織 | — | [DATA_NEEDED: organization (x)] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD voltage] |
| Prefetch | — | 16n (LPDDR5/5X architecture) |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh scheme] |
| Production Status | — | In production (in stock at distributors) |