K3KL3L30CM-BGCU vs K3KL9L90CM-MGCT 比較
詳細並排比較 K3KL3L30CM-BGCU 由 Samsung Electronics 與 K3KL9L90CM-MGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3KL9L90CM-MGCT - 64Gb LPDDR5X 7500Mbps x32 DRAM | Samsung
K3KL9L90CM-MGCT ✓ 啟用中規格比較
| 參數 | K3KL3L30CM-BGCU | K3KL9L90CM-MGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM (Volatile DRAM) | LPDDR5X SDRAM (DRAM) |
| 記憶體容量 | 64 Gb (8 GB) | 64 Gbit (8 GByte) |
| 資料速率 | 8533 Mbps | — |
| Memory Organization | x64 | x32 |
| Technology | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) | — |
| 封裝 | FBGA-496 (BGCU) | FBGA-315 (BGA-315) |
| 安裝類型 | Surface Mount | Surface Mount |
| Die Configuration | Stacked multi-die DRAM | — |
| 介面 | LPDDR5X (standard LPDDR ball interface) | LPDDR5X |
| Application Segment | AI devices and automotive | — |
| Power Efficiency | Approx. 25% better than previous LPDDR5 generation (per Samsung) | — |
| Speed Improvement | Up to 1.25x faster than previous generation (per Samsung) | — |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Place of Origin (per distributor listing) | Johor, Malaysia | — |
| Maximum Data Rate | — | 7500 Mbps |
| Supply Voltages | — | 500 mV / 900 mV / 1.05 V / 1.8 V |
| VDDQ | — | 500 mV |
| Ball Pitch | — | 0.8 mm |
| Product Status | — | Active |
| Typical Applications | — | Data storage, firmware boot, embedded logging, industrial controllers, computing modules |
| Memory Standard | — | JEDEC LPDDR5X-class (JESD209-5B family) |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency] |