K3KL8L80DM-MGCU vs K3KL9L90DM-JGCT 比較
詳細並排比較 K3KL8L80DM-MGCU 由 Samsung Electronics 與 K3KL9L90DM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3KL8L80DM-MGCU | K3KL9L90DM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 8 Gbit | 16 Gbit |
| 組織 | 1G x 32 | [DATA_NEEDED: x organization] |
| Supply Voltage (VDD) | 1.05 V | [DATA_NEEDED: core supply voltage] |
| 封裝 | FBGA-315 | FBGA-315 |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | LPDDR5X (JEDEC LPDDR5 backward-compatible) | [DATA_NEEDED: channel configuration] |
| 資料速率 | [DATA_NEEDED: max data rate / speed grade] | [DATA_NEEDED: data rate for JGCT speed grade] |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Refresh | Self-refresh with per-bank refresh support | — |
| Power Management | Deep Sleep Mode (LPDDR5 feature set) | — |
| Configuration | Single-die, 32-bit bus | — |
| RoHS 狀態 | unknown | Compliant |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Application Segment | Mobile / Automotive / Edge AI | — |
| I/O Voltage (VDDQ) | — | [DATA_NEEDED: I/O supply voltage] |
| Bank Architecture | — | [DATA_NEEDED: bank/group configuration] |
| Package Dimensions | — | [DATA_NEEDED: body dimensions] |
| AEC-Q100 | — | [DATA_NEEDED: automotive qualification status] |