K3LKBKB0BM-MGCP vs K3KL3L30CM-BGCT 比較
詳細並排比較 K3LKBKB0BM-MGCP 由 Samsung Electronics 與 K3KL3L30CM-BGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3LKBKB0BM-MGCP | K3KL3L30CM-BGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $46.62 | — |
| 記憶體類型 | DRAM (LPDDR5 SDRAM) | LPDDR5X SDRAM |
| 記憶體容量 | 32 Gbit | — |
| 組織 | 1G x 32 | x64 |
| 資料速率 | 6400 Mbps per pin | — |
| Supply Voltage Rails | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| 介面 | LPDDR5 x32 | — |
| 封裝 | FBGA-315 | [DATA_NEEDED: exact package code and ball count] |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 工作溫度 | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| Technology Generation | LPDDR5 (JEDEC LPDDR5 family) | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Density per Package | 4 GB (32 Gbit) | — |
| Refresh | Self-refresh and auto-refresh (LPDDR5 standard) | [DATA_NEEDED: refresh scheme] |
| Application Segment | Mobile, embedded, industrial computing | — |
| Standby / Deep Sleep | LPDDR5 deep-sleep power states | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: moisture sensitivity level] |
| Access Time / Latency | [DATA_NEEDED: CAS latency] | — |
| Density | — | 64 Gbit |
| Speed Grade | — | LPDDR5X-7500 (7500 MT/s) |
| Technology | — | Stacked DRAM die, mobile BGA |
| Core Voltage | — | [DATA_NEEDED: VDD core voltage] |
| I/O Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Standards Compliance | — | JEDEC LPDDR5X specification |
| Application Class | — | Mobile / embedded main memory |