K3LKCKC0BM-MGCP vs K3LKBKB0BM-MGCP 比較
詳細並排比較 K3LKCKC0BM-MGCP 由 Samsung Electronics 與 K3LKBKB0BM-MGCP 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3LKCKC0BM-MGCP | K3LKBKB0BM-MGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $46.62 |
| 記憶體類型 | LPDDR5 SDRAM (DRAM) | DRAM (LPDDR5 SDRAM) |
| 記憶體容量 | 64 Gbit | 32 Gbit |
| Memory Organization | 2G x32 | — |
| 資料速率 | 6400 Mbps | 6400 Mbps per pin |
| 介面 | Parallel | LPDDR5 x32 |
| Technology | CMOS | — |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| 工作溫度 | -25 C to +85 C | -25C to +85C |
| 封裝 | FBGA-315 (PBGA315) | FBGA-315 |
| 安裝類型 | Surface Mount | Surface Mount |
| Volatile / Non-Volatile | Volatile | — |
| RoHS 狀態 | Compliant | Compliant |
| Clock Frequency | [DATA_NEEDED: clock frequency] | — |
| Access Time | [DATA_NEEDED: access time] | — |
| Power Consumption - Active | [DATA_NEEDED: active power] | — |
| Power Consumption - Standby | [DATA_NEEDED: standby power] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| 組織 | — | 1G x 32 |
| Supply Voltage Rails | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Technology Generation | — | LPDDR5 (JEDEC LPDDR5 family) |
| Density per Package | — | 4 GB (32 Gbit) |
| Refresh | — | Self-refresh and auto-refresh (LPDDR5 standard) |
| Application Segment | — | Mobile, embedded, industrial computing |
| Standby / Deep Sleep | — | LPDDR5 deep-sleep power states |
| Access Time / Latency | — | [DATA_NEEDED: CAS latency] |