K4A4G045WD-BCPB vs K4A4G045WD-BCRC 比較

詳細並排比較 K4A4G045WD-BCPB 由 Samsung Electronics 與 K4A4G045WD-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K4A4G045WD-BCPB K4A4G045WD-BCPB - 4Gb DDR4 SDRAM x4 1.2V | Samsung

K4A4G045WD-BCPB - 4Gb DDR4 SDRAM x4 1.2V | Samsung

K4A4G045WD-BCPB ✓ 啟用中
Samsung Electronics
K4A4G045WD-BCRC K4A4G045WD-BCRC - 4Gb DDR4 SDRAM x4, 1.2V | Samsung

K4A4G045WD-BCRC - 4Gb DDR4 SDRAM x4, 1.2V | Samsung

K4A4G045WD-BCRC ✓ 啟用中

規格比較

參數 K4A4G045WD-BCPB K4A4G045WD-BCRC
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs DRAM
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gb
組織 1G x 4 1G x4
Speed Class DDR4-2133 (PC2133) —
供應電壓 1.2 V —
介面 DDR4 parallel, double data rate —
Die Generation D-die D-die
封裝 78-ball TFBGA (FBGA) TFBGA-78 (FBGA-78)
安裝類型 Surface Mount Surface Mount
Number of Terminals 78 78
Terminal Form Ball (BGA) —
Package Shape Rectangular —
Burst Length 8 (per Samsung DDR4 SDRAM datasheet Rev. 1.1) —
Speed Bin Notation CL-tRCD-tRP order (per Samsung ordering information) —
Datasheet Pages 66 pages (K4A4G045WD / K4A4G085WD family) —
工作溫度 [DATA_NEEDED: operating temperature range] —
Refresh Rate [DATA_NEEDED: refresh interval 1x/2x/4x support] —
Supply Voltage VDD — 1.2 V
Speed Grade / Data Rate — BCRC (2400 Mbps per Samsung product selection guide)
Self Refresh — Yes
Temperature Grade — [DATA_NEEDED: operating temperature range]
Clock Frequency — [DATA_NEEDED: CK frequency for BCRC bin]
CAS 延遲 — [DATA_NEEDED: CL for BCRC bin]
Bank Architecture — DDR4 8 internal banks with bank groups
Refresh — Self refresh supported (per Partstack listing)
RoHS 狀態 — [DATA_NEEDED: RoHS status]
Lead Free Status — [DATA_NEEDED: lead-free status]
Packaging Option — [DATA_NEEDED: tape and reel quantity]

資料表與資源

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