K4B4G1646D-BCK00 vs K4B4G1646D-BPH90 比較
詳細並排比較 K4B4G1646D-BCK00 由 Samsung Electronics 與 K4B4G1646D-BPH90 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4B4G1646D-BCK00 | K4B4G1646D-BPH90 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Density | 4 Gb | 4Gb |
| 組織 | 256M x 16 | 32M x 16 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| 資料速率 | 1600 Mbps/pin | 2133 Mb/s per pin |
| 供應電壓 | 1.35V (1.283V to 1.45V) | 1.35V (DDR3L) |
| I/O Voltage | 1.35V | — |
| 封裝 | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96FBGA |
| 工作溫度 | 0°C to 95°C (Tcase) | 0°C to +85°C |
| Number of Banks | 8 | 8 |
| CAS 延遲 | 11 (at 1600 Mbps) | Programmable up to 14 |
| Burst Length | 8, 4 (with burst chop) | 8, 4 (with burst chop) |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| 無鹵素 | Yes | Yes |
| On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS Compliant | — | Yes |