K9DUGY8S7M vs K9DUGY8S0M-BCK0 比較

詳細並排比較 K9DUGY8S7M 由 Samsung Electronics 與 K9DUGY8S0M-BCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K9DUGY8S7M K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics

K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics

K9DUGY8S7M ✓ 啟用中
Samsung Electronics
K9DUGY8S0M-BCK0 K9DUGY8S0M-BCK0 - Samsung NAND Flash Memory IC | Samsung

K9DUGY8S0M-BCK0 - Samsung NAND Flash Memory IC | Samsung

K9DUGY8S0M-BCK0 ✓ 啟用中

規格比較

參數 K9DUGY8S7M K9DUGY8S0M-BCK0
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Flash
生命週期狀態 啟用中 啟用中
Manufacturer Samsung Electronics Samsung Electronics
記憶體類型 NAND Flash (V-NAND, 3D) NAND Flash
Family K9DUG-series NAND —
Density [DATA_NEEDED: density] [DATA_NEEDED: memory density]
組織 [DATA_NEEDED: organization] [DATA_NEEDED: organization (bit width)]
供應電壓 [DATA_NEEDED: supply voltage] [DATA_NEEDED: supply voltage]
介面類型 [DATA_NEEDED: interface type] [DATA_NEEDED: interface type (async/ONFI/Toggle DDR)]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program/Erase Cycles [DATA_NEEDED: p/e cycles] —
Access Time / tR [DATA_NEEDED: access time] —
封裝 [DATA_NEEDED: package code] [DATA_NEEDED: package type and pin count]
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature] [DATA_NEEDED: operating temperature range]
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
MSL 等級 [DATA_NEEDED: MSL level] —
Product Family — K9 series NAND flash
Max Clock / Access Speed — [DATA_NEEDED: max clock frequency or access time]
Program Time (typ) — [DATA_NEEDED: typical page program time]
Erase Time (typ) — [DATA_NEEDED: typical block erase time]
Endurance (P/E cycles) — [DATA_NEEDED: program/erase endurance]

資料表與資源

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