K9EUGY8S0M-BCK0 vs K9DUGY8S0M-CCK0 比較
詳細並排比較 K9EUGY8S0M-BCK0 由 Samsung Electro-Mechanics 與 K9DUGY8S0M-CCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ 啟用中規格比較
| 參數 | K9EUGY8S0M-BCK0 | K9DUGY8S0M-CCK0 |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series V-NAND Flash | K9 series NAND Flash (V-NAND) |
| 記憶體類型 | NAND Flash (non-volatile) | NAND Flash (raw, controller-managed) |
| Density | [DATA_NEEDED: memory density] | [DATA_NEEDED: density] |
| 組織 | [DATA_NEEDED: organization x8/x16] | — |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | — |
| 供應電壓 | [DATA_NEEDED: VCC voltage] | [DATA_NEEDED: VCC range] |
| VCCQ Voltage | [DATA_NEEDED: VCCQ voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Access Time (tR) | [DATA_NEEDED: read access time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 封裝 | [DATA_NEEDED: package type and dimensions] | [DATA_NEEDED: package code and pin count] |
| 工作溫度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| Packing | [DATA_NEEDED: tray or tape and reel] | — |
| Cell Technology | — | V-NAND (vertical charge-trap) |
| 介面 | — | [DATA_NEEDED: interface type/width] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Read Time | — | [DATA_NEEDED: tR] |
| P/E Cycle Endurance | — | [DATA_NEEDED: endurance] |