K9IUGY8J7B-BCK0 vs K9IUGY8J7B-CCK0 比較
詳細並排比較 K9IUGY8J7B-BCK0 由 Samsung Electronics 與 K9IUGY8J7B-CCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9IUGY8J7B-BCK0 - 1Tb V-NAND TLC Flash | Samsung | Memory ICs
K9IUGY8J7B-BCK0 ✓ 啟用中規格比較
| 參數 | K9IUGY8J7B-BCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| MPN | K9IUGY8J7B-BCK0 | — |
| Product Type | V-NAND Flash (raw NAND) | — |
| Density | 1 Tbit | — |
| Cell Type | TLC (Triple-Level Cell, 3 bits/cell) | TLC (3 bits per cell) |
| Technology | Samsung V-NAND (3D vertical NAND) | — |
| Speed Grade | BCK0 | — |
| 介面 | [DATA_NEEDED: interface type and data rate] | — |
| 供應電壓 | [DATA_NEEDED: VCC range] | — |
| 組織 | [DATA_NEEDED: page/block organization] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | [DATA_NEEDED: package code / ball count] | [DATA_NEEDED: exact package code] |
| 工作溫度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 生命週期狀態 | Active | — |
| Memory Density | — | 1 Tb (Tera bit) |
| 記憶體類型 | — | NAND Flash, 3D V-NAND TLC |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| 介面類型 | — | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| 資料匯流排寬度 | — | [DATA_NEEDED: data bus width] |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |