K9IUGY8J7B-CCK0 vs K9FGGY8J5A-BCK0 比較

詳細並排比較 K9IUGY8J7B-CCK0 由 Samsung Electronics 與 K9FGGY8J5A-BCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K9IUGY8J7B-CCK0 K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 ✓ 啟用中
Samsung Electronics
K9FGGY8J5A-BCK0 K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 ✓ 啟用中

規格比較

參數 K9IUGY8J7B-CCK0 K9FGGY8J5A-BCK0
品牌 Samsung Electronics Samsung Electronics
類別 EEPROM Memory ICs
生命週期狀態 啟用中 啟用中
Memory Density 1 Tb (Tera bit) —
記憶體類型 NAND Flash, 3D V-NAND TLC NAND Flash (non-volatile)
Cell Type TLC (3 bits per cell) [DATA_NEEDED: cell type TLC/MLC]
V-NAND Generation V6 (6th generation) —
Process Node / Layer Count 4448-128L (128-layer) —
Manufacturer Samsung Electronics Samsung Electronics
介面類型 [DATA_NEEDED: bus interface type] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] —
資料匯流排寬度 [DATA_NEEDED: data bus width] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program/Erase Cycles [DATA_NEEDED: P/E cycle endurance] —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Package Type [DATA_NEEDED: exact package code] —
安裝類型 Surface Mount (BGA) Surface Mount
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Product Family — K9 Series NAND Flash
Technology — 3D V-NAND
Density — [DATA_NEEDED: density]
組織 — [DATA_NEEDED: organization]
Supply Voltage VCC — [DATA_NEEDED: supply voltage]
VCCQ Voltage — [DATA_NEEDED: VCCQ]
介面 — [DATA_NEEDED: interface type/toggle mode]
封裝 — [DATA_NEEDED: package and ball count]
Speed Grade Suffix — BCK0
MSL 等級 — [DATA_NEEDED: MSL level]

資料表與資源

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