K9NUGY8R6B-CCQ0 vs K9KUGY8J7C-CCK0 比較
詳細並排比較 K9NUGY8R6B-CCQ0 由 Samsung Electronics 與 K9KUGY8J7C-CCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ 啟用中Samsung Electronics
K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9KUGY8J7C-CCK0 ✓ 啟用中規格比較
| 參數 | K9NUGY8R6B-CCQ0 | K9KUGY8J7C-CCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NAND Flash (V-NAND, 3D TLC) | NAND Flash |
| Density | 1 Tb | [DATA_NEEDED: total device density] |
| Cell Type | Triple-Level Cell (TLC) | TLC (Triple-Level Cell) |
| 封裝 | 176-ball FBGA (176L) | — |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| 供應電壓 | [DATA_NEEDED: VCC range] | [DATA_NEEDED: VCC supply voltage range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: endurance rating] |
| Data Retention | [DATA_NEEDED: retention] | — |
| Read Latency | [DATA_NEEDED: tR] | — |
| 介面 | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) | [DATA_NEEDED: asynchronous/synchronous toggle interface mode] |
| ECC Requirement | External controller LDPC ECC required | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | Commercial grade (per -CCK0 suffix); exact range [DATA_NEEDED: operating temperature range] |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance] | Lead free / RoHS (per Samsung K9-family product pages) |
| Application Class | Consumer / Client / Enterprise SSD raw NAND | — |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9-Series V-NAND |
| Technology | — | Samsung V-NAND (3D NAND) |
| 組織 | — | [DATA_NEEDED: page/block/plane organization] |
| Package Type | — | BGA |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |