M29F400FT55N3E2 vs M29W400FT55N3E 比較
詳細並排比較 M29F400FT55N3E2 由 Micron Technology 與 M29W400FT55N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 啟用中
規格比較
| 參數 | M29F400FT55N3E2 | M29W400FT55N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (Parallel) | Flash - NOR Memory IC |
| Density | 4 Mbit (512K x 8) | — |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V (single supply) | — |
| 介面 | Parallel | Parallel |
| Boot Block Architecture | Top boot (FT variant) | — |
| 封裝 | 44-SO (SOP-44) | 48-TSOP I |
| 安裝類型 | Surface Mount | Surface Mount |
| Programming Supply | No 12 V VPP required (5.0 V programming) | — |
| Command Set | JEDEC standard compatible | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Cycles] | — |
| Data Retention | [DATA_NEEDED: Data Retention] | — |
| Active Read Current | [DATA_NEEDED: Active Current] | — |
| Standby Current | [DATA_NEEDED: Standby Current] | — |
| Block Protection | Hardware block protection | — |
| MSL 等級 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | — |
| 記憶體容量 | — | 4 Mbit |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V (program, erase and read) |
| Sector Size | — | 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) |
| Boot Block Position | — | Top (FT suffix) |
| Temperature Grade | — | Automotive |
| Number of Terminals | — | 48 |
| Package Code / Shape | — | TSSOP / Rectangular |
| 濕度敏感等級 (MSL) | — | 3 (168 Hours) |
| Packaging | — | Tray |
| Peak Reflow Time | — | 30 s max |
| Companion Access-Time Grade | — | 55 ns and 70 ns versions available in family |