M29F800FB55M3F2 vs M29W400FT55N3F 比較

詳細並排比較 M29F800FB55M3F2 由 Micron Technology 與 M29W400FT55N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F800FB55M3F2 M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 ✓ 啟用中
Micron Technology
M29W400FT55N3F M29W400FT55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FT55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FT55N3F ✓ 啟用中

規格比較

參數 M29F800FB55M3F2 M29W400FT55N3F
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash, Parallel NOR Flash
Density 8389 kbits (8 Mbit) —
組織 512K x 16-bit / 1M x 8-bit 4Mbit, block-organized, top boot block
Number of Words 512 k —
Bits per Word 16 bits —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Type Bottom Boot Block —
介面 Parallel, Asynchronous Parallel
Programming Embedded byte/word program algorithms —
OTP Area 64 byte —
工作溫度 -40C to +125C [DATA_NEEDED: operating temperature range]
Automotive Qualification Auto Grade 3 (temperature grade 3, +125C) —
封裝 44-pin SO (SOIC-44) 48-TSOP I
安裝類型 Surface Mount Surface Mount
Packing Tape & Reel (T/R) —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Endurance [DATA_NEEDED: program/erase endurance cycles] [DATA_NEEDED: program/erase cycles]
記憶體容量 — 4 Mbit
Bus Configuration — x8 / x16 (BYTE-selectable)
Program/Erase — Block erase, word/byte program
供應電壓 — [DATA_NEEDED: supply voltage range]
Suspend/Resume — Erase/program suspend and resume
Data Retention — [DATA_NEEDED: data retention]
Packaging — Tape & Reel (TR suffix)
Prefix F in MPN — Pb-free package suffix

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