MC9S12DG128CPV vs MC9S12DP512CPVE 比較

詳細並排比較 MC9S12DG128CPV 由 NXP Semiconductors 與 MC9S12DP512CPVE 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MC9S12DG128CPV MC9S12DG128CPV - 16-Bit HCS12 MCU, 128KB Flash | NXP

MC9S12DG128CPV - 16-Bit HCS12 MCU, 128KB Flash | NXP

MC9S12DG128CPV ✓ 啟用中
NXP Semiconductors
MC9S12DP512CPVE MC9S12DP512CPVE - 16-Bit 25MHz HCS12 MCU | NXP

MC9S12DP512CPVE - 16-Bit 25MHz HCS12 MCU | NXP

MC9S12DP512CPVE ✓ 啟用中

規格比較

參數 MC9S12DG128CPV MC9S12DP512CPVE
品牌 NXP Semiconductors NXP Semiconductors
類別 Microcontrollers Microcontrollers
生命週期狀態 啟用中 啟用中
Core Architecture HCS12 (16-bit CISC) HCS12, CISC
Maximum CPU Clock 25 MHz —
Program Memory (Flash) 128 KB (128K x 8) —
Data Memory (RAM) 8 KB —
EEPROM 2 KB 4 KB
Number of I/O Pins 91 —
封裝 / 外殼 112-LQFP (20 x 20 mm) —
Analog-to-Digital Converter 8-channel, 10-bit ATD —
CAN Modules Up to 3 x MSCAN (CAN 2.0A/B) —
Serial Interfaces 2 x SCI (UART), 1 x SPI, 1 x I2C —
Timer Enhanced Capture Timer (ECT), 8 channels —
Operating Voltage 4.5 V to 5.5 V (single 5V supply) —
工作溫度 -40 C to +125 C (automotive) —
安裝類型 Surface Mount Surface Mount
MSL 等級 3 (168 hours) —
Debug Interface Background Debug Mode (BDM) —
RoHS 狀態 [DATA_NEEDED: RoHS status from manufacturer] —
Flash Endurance 100,000 write/erase cycles (typical) —
Product Type — 16-bit HCS12 CISC microcontroller
Maximum Operating Frequency — 25 MHz
Internal Flash Memory — 512 KB
Internal RAM — 12 KB
ADC — Two 8-channel, 10-bit ADCs
Serial Communication Interfaces — 2 asynchronous serial communication interfaces
Enhanced Capture Timer — 8-channel IC/OC enhanced capture timer
Pulse-Width Modulator — 8-channel PWM
General-Purpose I/O — 91 pins
封裝 — 112-pin LQFP (20x20)
Operating Supply — 2.5 V / 5 V
Series — MC9S12
記憶體類型 — Flash
Automotive Positioning — MC9S12D family designed for automotive multiplexing applications

資料表與資源

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