MPX2100D vs MPX2100DP 比較
詳細並排比較 MPX2100D 由 NXP Semiconductors 與 MPX2100DP 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MPX2100D | MPX2100DP |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | Pressure Sensors | Pressure Sensors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 psi) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Full-Scale Span (Typical) | 40 mV at 10 V excitation | 40 mV (at 10 V excitation) |
| Sensitivity (Nominal) | 0.4 mV/kPa | — |
| Supply Voltage (Recommended) | 10 V DC | — |
| Supply Voltage (Maximum) | 16 V DC | — |
| 輸出類型 | Analog ratiometric Wheatstone bridge (millivolts) | Analog mV (Wheatstone Bridge) |
| Pressure Port Configuration | Dual axial ports (differential) | — |
| 封裝 | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch | — |
| Package Body Dimensions | 15.56 mm x 15.56 mm x 5.33 mm | — |
| 安裝類型 | Through-hole SIP module | Through-Hole |
| 工作溫度範圍 | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | — |
| On-Chip Temperature Compensation | Yes (factory laser-trimmed) | — |
| Technology | Silicon piezoresistive MEMS strain-gauge bridge | Silicon piezoresistive, on-chip temperature compensation |
| RoHS 狀態 | Compliant [DATA_NEEDED: confirm from NXP product page] | Compliant |
| Diaphragm Material | Silicon [DATA_NEEDED: confirm] | — |
| Linearity | 0.1% to 0.3% typical [DATA_NEEDED: confirm] | 1% typical |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Zero Pressure Offset | — | [DATA_NEEDED: zero pressure offset] |
| 供應電壓 | — | 10 V DC typical |
| 供應電流 | — | [DATA_NEEDED: supply current] |
| 工作溫度 | — | 0C to +85C (compensated) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Port Configuration | — | Dual port, axial tube, 4.93 mm (0.19 in) |
| 封裝 / 外殼 | — | 4-SIP Module (Case 344C-01) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |