MRF6P21190HR5 vs MRF5P21180HR5 比較

詳細並排比較 MRF6P21190HR5 由 NXP Semiconductors 與 MRF5P21180HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF6P21190HR5 MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP

MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP

MRF6P21190HR5 Obsolete
NXP Semiconductors
MRF5P21180HR5 MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP

MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP

MRF5P21180HR5 ✓ 啟用中

規格比較

參數 MRF6P21190HR5 MRF5P21180HR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 Obsolete 啟用中
電晶體類型 LDMOS, N-Channel LDMOS (Laterally Diffused MOSFET), N-Channel
Application RF Power Amplifier (W-CDMA / LTE base station) —
Frequency 2.12 GHz (operating range 1930-2120 MHz) —
Test Supply Voltage (Vdd) 28 V —
Voltage - Rated (Vds max) 68 V —
Output Power (Pout) 44 W (CW, at 2.12 GHz) —
Power Gain 15.5 dB 14 dB at 2.16 GHz
Test Current (Idq) 1.9 A —
Drain Efficiency (typical) 33 % —
封裝 / 外殼 NI-1230 (ceramic, bolt-down flange) NI-1230 (5-pin ceramic flange-mount)
Supplier Device Package NI-1230 —
安裝類型 Chassis-mount, bolt-down flange with PCB lead Chassis / Flange Mount (bolt-down)
工作溫度 -40 C to +150 C (junction) —
RoHS 狀態 [DATA_NEEDED: RoHS status] —
Lead-Free / Finish Gold-plated leads (typical for NI-1230 family) —
Technology LDMOS (Laterally Diffused MOS) Lateral N-Channel RF Power MOSFET
Polarity / Channel N-Channel —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Family — MRF5P21180
Drain-Source Voltage (VDS) Rated — 65 V
Operating Drain Voltage (Test) — 28 V
Test Frequency — 2.16 GHz
Operating Frequency Range — 2110 MHz to 2170 MHz (W-CDMA band)
Output Power (Pout, CW or Avg) — 38 W
Quiescent Current (Idq) at Test — 1.6 A
Current Rating (Datasheet Symbol) — [DATA_NEEDED: continuous drain current]
Operating Mode — Class AB, single-ended or Doherty
Modulation Support — W-CDMA, TDMA, CDMA, multicarrier
Lead Free / RoHS — Lead Free (per distributor listings)

資料表與資源

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