MRF6VP3450HSR5 vs MRF6VP3450HR6 比較
詳細並排比較 MRF6VP3450HSR5 由 NXP Semiconductors 與 MRF6VP3450HR6 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF6VP3450HR6 - 860 MHz 450W RF Power MOSFET | NXP Semiconductors
MRF6VP3450HR6 ✓ 啟用中規格比較
| 參數 | MRF6VP3450HSR5 | MRF6VP3450HR6 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | LDMOS (N-Channel Enhancement-Mode Lateral) |
| Technology | LDMOS (Laterally Diffused MOS) | Lateral-Diffused MOS (LDMOS) |
| Frequency Range | 470 MHz to 860 MHz | — |
| Test Frequency | 860 MHz | 860 MHz |
| Drain-Source Voltage (Vds) Rated | 110 V minimum | — |
| Drain-Source Voltage (Vds) Test | 50 V | — |
| Continuous Drain Current (Id) | 1.4 A | — |
| Power Gain (Gps) | 22.5 dB typical | 22.5 dB at 860 MHz |
| Output Power (Pout) | 450 W (CW, broadband rating) | 450 W (CW) |
| Pulsed Output Power | 90 W (separate pulsed rating) | — |
| 封裝 / 外殼 | NI-1230-4S (bolt-down ceramic chassis-mount) | NI-1230 (ceramic, bolt-down) |
| Supplier Device Package | NI-1230-4S | — |
| 安裝類型 | Chassis Mount | Chassis-mount, bolted flange |
| Configuration | Single, common-source | Single, common-source amplifier |
| Operating Mode | Class AB (typical for UHF broadcast PAs) | — |
| Qualification | Not Qualified (per partstack listing) | — |
| Peak Reflow Time | 40 s maximum | — |
| RoHS 狀態 | [DATA_NEEDED: confirm from current manufacturer data] | [DATA_NEEDED: RoHS compliance status] |
| Drain-Source Voltage (VDS) | — | 50 V |
| Rated Voltage | — | 110 V |
| Operating Frequency | — | 470 MHz to 860 MHz |
| Test Power Output | — | 90 W |
| Drain Current (Test Id) | — | 1.4 A |
| Application | — | Broadcast TV transmitter final stage / broadband RF amplifier |