MT41K64M16TW-107 AUT:J vs K4A4G165WG-BCWE 比較
詳細並排比較 MT41K64M16TW-107 AUT:J 由 Micron Technology 與 K4A4G165WG-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ 啟用中
規格比較
| 參數 | MT41K64M16TW-107 AUT:J | K4A4G165WG-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $16.90 |
| 記憶體類型 | SDRAM - DDR3L | DDR4 SDRAM (volatile DRAM) |
| 記憶體容量 | 1 Gbit | 4 Gbit |
| 組織 | 64M x 16 | — |
| 介面 | Parallel | Parallel |
| Clock Frequency | 933 MHz | [DATA_NEEDED: clock frequency / tCK range] |
| Access Time | 20 ns | 19 ns |
| 供應電壓 | 1.35 V (DDR3L), 1.5 V compatible | 1.2 V |
| 封裝 | 96-FBGA (8 x 14 mm) | FBGA-96 |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | AUT (automotive) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS latency] |
| Refresh Rate | [DATA_NEEDED: refresh rate] | [DATA_NEEDED: refresh interval] |
| 資料速率 | 1866 MT/s (DDR3L-1866) | 3200 Mbps |
| Termination | On-Die Termination (ODT) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Packaging | Tray (T/R per listing) | — |
| Memory Organization | — | 256M x 16 |
| Memory Format | — | DRAM |
| Technology | — | DDR4 |
| Product Status | — | Active |