RTAX250S-1CG624V vs RTAX250S-1CG624E 比較

詳細並排比較 RTAX250S-1CG624V 由 Microchip Technology 與 RTAX250S-1CG624E 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Microchip Technology
RTAX250S-1CG624V RTAX250S-1CG624V - 250k Gate Rad-Tolerant FPGA | Microchip

RTAX250S-1CG624V - 250k Gate Rad-Tolerant FPGA | Microchip

RTAX250S-1CG624V ✓ 啟用中
Microchip Technology
RTAX250S-1CG624E RTAX250S-1CG624E - 250K-Gate Rad-Tolerant FPGA 624-CCGA | Microchip

RTAX250S-1CG624E - 250K-Gate Rad-Tolerant FPGA 624-CCGA | Microchip

RTAX250S-1CG624E ✓ 啟用中

規格比較

參數 RTAX250S-1CG624V RTAX250S-1CG624E
品牌 Microchip Technology Microchip Technology
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 啟用中 啟用中
Equivalent System Gates 250,000 250,000
Configurable Logic Blocks (CLBs) 2816 —
Cell Organization 4224 cells —
Family RTAX-S Radiation-Tolerant FPGA RTAX-S Radiation-Tolerant FPGA
Programmable Technology Antifuse (CMOS) —
Speed Grade -1 -1 (approximately 15% faster than standard)
Combinatorial CLB Delay (Max) 0.930 ns —
封裝 624-terminal Ceramic Grid Array (CGA) 624-pin Ceramic Column Grid Array (CCGA)
Package Code CG624 —
工作溫度 -55C to +125C -55C to +125C
Qualification / Screening V grade (space screening) —
安裝類型 Surface Mount Surface Mount
Configuration Live at power-up, single-chip —
Embedded Memory Embedded SRAM with FIFO control logic Embedded SRAM with built-in FIFO control
RoHS 狀態 [DATA_NEEDED: RoHS status] —
Total Ionizing Dose (TID) [DATA_NEEDED: TID rating] —
Supply Voltage (Core) [DATA_NEEDED: core supply voltage] —
Logic Cells — 2816
Maximum Toggle Frequency — 649 MHz
CLB Combinatorial Delay (Max) — 0.930 ns
Core Supply Voltage — 1.5 V
Process Technology — 0.15 um CMOS antifuse
Configuration Type — One-time programmable antifuse, live at power-up
Logic Family — CMOS
SEU Hardening — SEU-hardened registers, immune to single-event upsets
Application Domain — Space flight / satellite systems

資料表與資源

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