UCC21520Q-Q1 vs UCC21530Q-Q1 比較

詳細並排比較 UCC21520Q-Q1 由 Texas Instruments 與 UCC21530Q-Q1 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21520Q-Q1 UCC21520Q-Q1 - 4A/6A 5.7kVRMS Isolated Dual Gate Driver | TI

UCC21520Q-Q1 - 4A/6A 5.7kVRMS Isolated Dual Gate Driver | TI

UCC21520Q-Q1 ✓ 啟用中
Texas Instruments
UCC21530Q-Q1 UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 ✓ 啟用中

規格比較

參數 UCC21520Q-Q1 UCC21530Q-Q1
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
輸出配置 Dual-channel isolated gate driver —
Peak Source Current 4 A —
Peak Sink Current 6 A —
Isolation Rating 5.7 kVRMS (reinforced) 5.7 kVRMS (reinforced)
Isolation Technology Capacitive (SiO2) —
CMTI 125 V/ns minimum —
Maximum Switching Frequency 5 MHz 5 MHz
UVLO Yes, on all supply pins (8-V UVLO variant) —
Input Threshold TTL and CMOS compatible, independent of VDD TTL and CMOS compatible
Control Pins INA, INB, DIS (disable) —
Target Power Devices Power MOSFETs, IGBTs, SiC MOSFETs —
封裝 16-SOIC wide-body (DWQ), surface mount SOIC-14 (DWK)
Automotive Qualification AEC-Q100 (Q1) —
Propagation Delay [DATA_NEEDED: typical propagation delay value] —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
RoHS 狀態 Compliant Compliant
Output Peak Current (Source) — 4 A
Output Peak Current (Sink) — 6 A
Channel-to-Channel Spacing — 3.3 mm
CMTI (Common-Mode Transient Immunity) — 125 V/ns (minimum)
Number of Channels — 2
Configuration — Low-side, high-side, half-bridge, dual low-side
Dead Time — Programmable via DT pin resistor
致能腳位 — Yes
Driven Device Types — IGBT, Si MOSFET, SiC MOSFET
Qualification — AEC-Q100 (automotive)
安裝類型 — Surface Mount
Supply Voltage VDDI — [DATA_NEEDED: VDDI range]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價