UCC21530Q-Q1 vs UCC21521DWR 比較

詳細並排比較 UCC21530Q-Q1 由 Texas Instruments 與 UCC21521DWR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21530Q-Q1 UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 ✓ 啟用中
Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ 啟用中

規格比較

參數 UCC21530Q-Q1 UCC21521DWR
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Output Peak Current (Source) 4 A —
Output Peak Current (Sink) 6 A —
Isolation Rating 5.7 kVRMS (reinforced) 5700 Vrms
Channel-to-Channel Spacing 3.3 mm —
CMTI (Common-Mode Transient Immunity) 125 V/ns (minimum) —
Maximum Switching Frequency 5 MHz —
Number of Channels 2 —
Configuration Low-side, high-side, half-bridge, dual low-side —
Dead Time Programmable via DT pin resistor —
致能腳位 Yes —
Input Threshold TTL and CMOS compatible TTL and CMOS compatible (3.3 V logic)
Driven Device Types IGBT, Si MOSFET, SiC MOSFET —
Qualification AEC-Q100 (automotive) —
封裝 SOIC-14 (DWK) SOIC-16 (DW)
安裝類型 Surface Mount Surface Mount
Supply Voltage VDDI [DATA_NEEDED: VDDI range] —
工作溫度 [DATA_NEEDED: temperature range] -40C to +125C
RoHS 狀態 Compliant Compliant
Channel Count — 2
Peak Source Current — 4 A
Peak Sink Current — 6 A
CMTI — 100 V/ns (minimum)
Propagation Delay — 19 ns (typical)
Delay Matching — 5 ns (maximum)
Pulse-Width Distortion — 6 ns (maximum)
Minimum Pulse Width — 10 ns
Max Switching Frequency — 5 MHz
Isolation Technology — Capacitive coupling
Enable / Disable Pin — Yes (DIS)
Configurations — Dual low-side, dual high-side, or half-bridge

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