ADPA1113 - 2-6GHz 46dBm GaN Power Amplifier | Analog Devices
MPN： ADPA1113 ✓ 啟用中ADPA1113 概覽
A GaN power amplifier is a high-efficiency RF amplifier that uses gallium nitride transistors to achieve high output power and wide bandwidth. GaN technology offers superior power density, thermal performance, and efficiency compared to traditional silicon-based amplifiers, making it ideal for demanding RF applications. In the signal chain hierarchy, the ADPA1113 functions as a final-stage power amplifier, converting low-level RF signals into high-power signals suitable for transmission, typically following driver amplifiers and preceding antennas or filters.
Key features of the ADPA1113 include its 46.5 dBm saturated output power, 39.0% PAE, and operation across the full 2.3 GHz to 5.7 GHz band without external matching. The device is biased with a positive 28 V drain supply and a negative gate voltage, enabling precise control of the quiescent current. The 14-lead LDCC package provides excellent thermal performance, with the exposed pad facilitating heat transfer to the PCB. The amplifier is recommended for new designs, indicating active lifecycle status and ongoing manufacturer support.
Technically, the ADPA1113 utilizes a cascaded gain stage architecture, allowing it to achieve high gain and output power in a single device. The negative gate bias (VGG1) sets the operating point, ensuring linearity and efficiency across the frequency range. The device's broadband performance eliminates the need for external matching networks, reducing design complexity and component count. The 28 V drain supply is typical for GaN devices, balancing efficiency and output power.
Typical applications include radar systems, electronic warfare, communications infrastructure, and test and measurement equipment. The ADPA1113's high output power and wide bandwidth make it suitable for pulsed and continuous-wave (CW) operation in these systems. Its efficiency reduces thermal management requirements, enabling compact system designs.
When designing with the ADPA1113, ensure proper thermal management through adequate PCB copper area and heat sinking, as the device dissipates significant power at high output levels. The negative gate bias must be applied before the drain supply to prevent device damage, following standard GaN biasing sequences.
直接替換替代品，適用於 ADPA1113 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： ADPA1113 （相同外形與佔位） — 差異在於 Mounting Type, RoHS Status.
ADPA1113AEJZ
✅ 直接替換📋 參考替代品（不在目錄中）
QPA2211
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
TGA2594
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
CGH40010F
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
ADPA1113 最大額定值與電氣特性
| Frequency Range | 2 GHz to 6 GHz |
| Output Power (Saturated) | 46.5 dBm (44.7 W) |
| Power Added Efficiency (PAE) | 39.0% |
| Drain Supply Voltage | 28 V (nominal) |
| Gate Supply Voltage | Negative, applied to VGG1 |
| Quiescent Current (IDQ) | 750 mA (nominal) |
| Technology | Gallium Nitride (GaN) |
| 封裝 | 14-LDCC (9.8x8.2 mm) |
| 安裝類型 | Surface Mount |
| Gain Stages | Cascaded |
| External Matching | Not Required |
| AC Coupling | Not Required |
| External Bias Inductor | Not Required |
| 生命週期狀態 | Recommended for New Designs |
| RoHS 狀態 | Compliant |
ADPA1113 腳位配置
| 腳位 1 | VGG1 — Gate bias (negative voltage) |
| 腳位 2 | RFIN — RF input |
| 腳位 3 | VDD1 — Drain supply stage 1 |
| 腳位 4 | VDD2 — Drain supply stage 2 |
| 腳位 5 | VDD3 — Drain supply stage 3 |
| 腳位 6 | RFOUT — RF output |
| 腳位 7 | GND — Ground |
| 腳位 8 | GND — Ground |
| 腳位 9 | GND — Ground |
| 腳位 10 | GND — Ground |
| 腳位 11 | GND — Ground |
| 腳位 12 | GND — Ground |
| 腳位 13 | GND — Ground |
| 腳位 14 | GND — Ground |
典型應用
ADPA1113 適用於 6 應用s: Radar Systems, Communications Infrastructure, Electronic Warfare, Test and Measurement, Satellite Communications, Point-to-Point Radios.
Radar Systems
The ADPA1113's 46.5 dBm output power and 2-6 GHz frequency range make it ideal for pulsed radar transmitters. Its GaN technology provides high efficiency (39% PAE), reducing thermal management requirements in compact radar modules. The device operates without external matching, simplifying integration into phased-array and weather radar systems. Its broadband performance supports frequency-agile radar operation, enhancing target detection and resolution.
推薦
Communications Infrastructure
In 5G and microwave backhaul transmitters, the ADPA1113 delivers the high output power needed for long-range links. Its 2-6 GHz coverage spans multiple communication bands, and the 39% PAE reduces power consumption and heat dissipation. The lack of external matching components minimizes board space and BOM cost. The device's linearity supports complex modulation schemes, ensuring signal integrity in high-capacity data links.
推薦
Electronic Warfare
The ADPA1113's wide bandwidth and high output power are critical for electronic warfare (EW) systems that must jam or deceive enemy radar across multiple frequency bands. Its 46.5 dBm output ensures effective jamming range, while the GaN technology provides robustness against high VSWR conditions. The device's fast switching capability supports pulsed operation, and the compact LDCC package enables dense integration in EW pods and shipboard systems.
推薦
Test and Measurement
In RF test equipment, the ADPA1113 serves as a high-power source for amplifier testing, EMC testing, and material characterization. Its 2-6 GHz frequency range covers common test bands, and the 46.5 dBm output can drive high-power test fixtures. The device's broadband operation eliminates the need for multiple amplifiers, reducing equipment cost. The 39% PAE minimizes cooling requirements in benchtop instruments, and the simple biasing scheme (28 V drain, negative gate) simplifies power supply design.
推薦
Satellite Communications
The ADPA1113 is suitable for satellite uplink transmitters in the 2-6 GHz range, providing the high output power needed to overcome path loss. Its GaN technology offers high reliability in space environments, and the 39% PAE reduces solar panel power requirements. The device's broadband performance supports multiple uplink bands, and the lack of external matching simplifies redundancy designs. The 28 V drain supply is compatible with common satellite bus voltages.
推薦
Point-to-Point Radios
In microwave point-to-point links, the ADPA1113 provides the output power required for high-capacity backhaul. Its 2-6 GHz coverage includes common licensed bands, and the 46.5 dBm output supports long link distances. The 39% PAE reduces power consumption in remote radio heads, and the compact LDCC package enables small form-factor designs. The device's linearity is essential for high-order QAM modulation, ensuring error-free data transmission.
推薦
推薦產品摘要
工程參考資料，適用於 ADPA1113 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | ADPA1113AEJZ | QPA2211 | TGA2594 | CGH40010F |
|---|---|---|---|---|---|
| Package | 14-LDCC (9.8x8.2) | 14-LDCC (9.8x8.2) - same | 14-LDCC (9.8x8.2) - same | 14-LDCC (9.8x8.2) - same | 14-LDCC (9.8x8.2) - same |
| Brand | Analog Devices | Analog Devices | Qorvo | Qorvo | Wolfspeed |
| Technology | GaN | GaN | GaN | GaN | GaN |
主要差異化特點
- No external matching required (對比CGH40010F)
- Higher output power (對比CGH40010F)
- Integrated cascaded gain stages (對比QPA2211)
設計說明
The ADPA1113 requires a 28 V drain supply and a negative gate bias on VGG1. Apply the negative gate voltage first to set IDQ to 750 mA before enabling the drain supply. This sequencing prevents inrush current and potential device damage. Use a low-impedance 28 V supply capable of handling the peak current during RF drive.
At 46.5 dBm output with 39% PAE, the ADPA1113 dissipates significant power. For example, at 44.7 W output and 39% PAE, input power is approximately 114.6 W, resulting in ~70 W of heat dissipation. Ensure adequate thermal management using the exposed pad soldered to a large copper area with thermal vias. Consider a heatsink or forced air cooling for continuous operation.
The ADPA1113 requires no external matching, but proper PCB layout is essential. Use 50-ohm controlled impedance traces for RF input and output. Place decoupling capacitors close to the drain supply pins. The exposed pad must be soldered to the ground plane for thermal and electrical performance. Follow the layout guidelines in the datasheet for optimal performance.
合規資訊
RoHS compliance inferred from Analog Devices standard practice. Other compliance data not explicitly stated in provided sources.
