IRF5N5210 - -100V P-CH HEXFET MOSFET, SMD-1 | International Rectifier
MPN： IRF5N5210 ✓ 啟用中IRF5N5210 概覽
A P-channel MOSFET (PMOS) is a type of field-effect transistor in which the majority carriers are holes; it is turned ON by pulling the gate voltage below the source voltage. PMOS devices sit at the high-side of a load in many switching topologies and simplify low-side drive designs because the gate can be referenced to ground. Within the power-MOSFET taxonomy, the IRF5N5210 belongs to the HEXFET family of planar/HEX-cell MOSFETs, the broader discrete-semiconductor hierarchy, and is qualified for high-energy pulse and aerospace/defense circuits. This P-channel construction simplifies gate drive in high-side switching because no charge pump is required.
Key electrical specifications include a -100V drain-source breakdown (V(BR)DSS), -31A continuous drain current (ID), and HEXFET cell architecture that minimizes RDS(on) per unit area. The device features high transconductance, superior avalanche energy rating, and reverse-recovery dv/dt capability, enabling robust operation in inductive-switching environments. The SMD-1 surface-mount package provides a low-profile footprint suitable for high-density PCBs while maintaining the high-current handling required for power applications.
Typical applications include power supplies (as a high-side switch), motor control circuits, chopper circuits, audio amplifiers, and other high-energy pulse applications. The MIL-PRF-19500 qualification makes it particularly suitable for military, aerospace, and other high-reliability environments where ruggedness and proven performance are required.
When designing with the IRF5N5210, note that P-channel MOSFETs require the gate voltage to be pulled below the source to turn on, which usually means the gate driver must be referenced to the source node. For switching applications, ensure proper gate-source resistance to control switching speed and prevent false triggering from dv/dt transients. The high avalanche rating allows unclamped inductive switching within the published energy limits.
This page synthesizes manufacturer datasheet values, MIL-PRF-19500 qualification status, parametric drop-in alternatives, and high-reliability design guidance that is not duplicated on distributor listing pages.
直接替換替代品，適用於 IRF5N5210 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
IRF5NJ5305
✅ 直接替換📋 參考替代品（不在目錄中）
IRF5N4905
✅ 直接替換📋 參考替代品（不在目錄中）
IRF5N5210 最大額定值與電氣特性
| Drain-Source Voltage (V(BR)DSS) | -100 V |
| Continuous Drain Current (ID) | -31 A |
| Polarity | P-channel |
| Technology | HEXFET (Fifth Generation) |
| 封裝 | SMD-1 (Surface Mount) |
| 安裝類型 | Surface Mount |
| Qualification | MIL-PRF-19500 (high-reliability) |
| Datasheet Document Number | PD-94154B |
| Avalanche Energy Rated | Yes |
| High Transconductance | Yes |
| Reverse Recovery dv/dt Capability | Superior (per datasheet) |
IRF5N5210 腳位配置
| 腳位 1 | Gate — MOSFET gate control input |
| 腳位 2 | Drain — MOSFET drain (connected to load/source in P-channel high-side config) |
| 腳位 3 | Source — MOSFET source (connected to supply in P-channel high-side config) |
安全工作區 (DC) - IRF5N5210
典型應用
IRF5N5210 適用於 6 應用s: Military/Aerospace Power Supply High-Side Switch, Motor Control H-Bridge High-Side Switch, Audio Amplifier Output Stage Switch, Inductive Load Chopper / Pulse Circuit, Battery Disconnect / Reverse-Polarity Protection, High-Energy Pulse / Laser Diode Driver.
Military/Aerospace Power Supply High-Side Switch
The IRF5N5210's -100V V(BR)DSS, -31A continuous drain current, and MIL-PRF-19500 qualification make it well suited as a high-side P-channel switch in 28V/48V military and aerospace DC-DC converter front ends. As a P-channel device it simplifies the gate drive because the gate can be pulled below the source referenced to the input rail without a bootstrap. Place it between the input bus and the converter's input capacitor; the high transconductance and low RDS(on) per silicon area minimize conduction loss. The MIL-PRF-19500 screening provides the lot traceability and reliability required for flight hardware.
推薦
Motor Control H-Bridge High-Side Switch
The IRF5N5210's -31A ID rating and avalanche-energy rating make it suitable as the high-side P-channel switch in brushed DC motor H-bridge drives. Its P-channel polarity pairs naturally with N-channel low-side MOSFETs, eliminating the need for a high-side bootstrap supply and simplifying the gate driver. Mount the SMD-1 package on a PCB with adequate copper pour; the high-reliability screening supports the vibration and thermal-cycling demands of industrial motor-control and aerospace actuator applications.
推薦
Audio Amplifier Output Stage Switch
The IRF5N5210's high transconductance, low on-state resistance per silicon area, and rugged avalanche rating suit it for class-D and switch-mode audio amplifier output stages where clean switching and thermal stability are required. Place it as a P-channel half-bridge switch paired with an N-channel low-side device; the superior reverse-recovery dv/dt capability reduces body-diode losses and EMI in the audio band. The MIL-PRF-19500 qualification supports professional and broadcast audio equipment requiring long-term reliability.
推薦
Inductive Load Chopper / Pulse Circuit
The IRF5N5210's avalanche energy rating and reverse-recovery dv/dt capability are critical for chopper circuits driving inductive loads such as solenoids, relays, and pulsed magnets. The HEXFET cell structure absorbs unclamped inductive switching energy within the published avalanche rating, allowing operation without external freewheeling diodes in some configurations. Its SMD-1 high-reliability package supports pulsed-power applications in scientific instrumentation, defense fuzing, and aerospace actuator drive circuits where ruggedness and traceability are mandatory.
推薦
Battery Disconnect / Reverse-Polarity Protection
The IRF5N5210's -100V rating and -31A continuous current make it suitable as a high-side P-channel reverse-polarity and battery-disconnect switch in 24V/48V battery systems. Place it between the battery terminal and the load bus; a gate pull-up to the source and a pull-down resistor to ground (driven by a comparator/MCU) implement the disconnect logic. The P-channel arrangement keeps the load disconnected when the gate is high (default OFF) and reduces quiescent current, while the Hi-Rel screening supports mission-critical battery management.
推薦
High-Energy Pulse / Laser Diode Driver
The IRF5N5210's -31A peak capability, low on-state resistance, and rugged avalanche rating make it suitable for pulsed-current laser diode driver circuits and other high-energy pulse discharge applications. Use it as the switching element in a capacitive-discharge pulse circuit; the HEXFET cell's low RDS(on) minimizes conduction loss during the pulse and the high dv/dt rating supports fast rise times. The MIL-PRF-19500 qualification supports defense and scientific pulsed-laser applications where component traceability and reliability are required.
推薦
推薦產品摘要
工程參考資料，適用於 IRF5N5210 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IRF5NJ5305 | IRF5N4905 |
|---|---|---|---|
| Brand | International Rectifier | International Rectifier | International Rectifier |
| Package | SMD-1 | SMD-1 - same | SMD-1 - same |
| Polarity | P-channel | N-channel (Hi-Rel) | P-channel (Hi-Rel) |
| Technology | HEXFET (Fifth Generation) | HEXFET (Fifth Generation) | HEXFET (Fifth Generation) |
| MIL-PRF-19500 Qualification | Yes | Yes | Yes |
主要差異化特點
- MIL-PRF-19500 high-reliability qualification (對比Commercial P-channel MOSFETs (DPAK/TO-220))
- P-channel high-side switch simplifies gate drive (對比N-channel high-side switch (requires bootstrap/charge pump))
- Fifth-Generation HEXFET cell architecture (對比Older planar MOSFET generations)
設計說明
Because the IRF5N5210 is a P-channel MOSFET, the device turns ON when VGS is driven negative (typically -10V) relative to the source, not positive. A common design mistake is to drive the gate high (to source or above), which keeps the MOSFET OFF. In high-side switch configurations, the gate driver must be referenced to the source node (which floats with the load), not to circuit ground. Use a dedicated gate-driver IC or a level-shifting circuit that pulls the gate to -10V relative to source for turn-on.
Estimated: at -31A continuous drain current with a typical RDS(on) of approximately 0.05 ohm, conduction loss would be approximately 48W (P = I^2 * R). The SMD-1 package thermal resistance theta_JA should be consulted from datasheet PD-94154B and adequate PCB copper (typically 4-6 square inches of 2oz pour plus thermal vias) is required to keep junction temperature below the datasheet maximum. For high-reliability applications, derate to 60-70% of maximum current to extend MTBF.
Place the gate drive resistor (typically 10-100 ohm) close to the gate pin to dampen parasitic oscillations and limit ringing from the gate-source and gate-drain capacitances. Keep the gate-trace short and away from drain-node switching transients to minimize dv/dt-induced false turn-on. For the SMD-1 package, follow the land-pattern and thermal-via recommendations in datasheet PD-94154B, and provide adequate creepage/clearance for the high-voltage drain node.
合規資訊
MIL-PRF-19500 high-reliability qualification per datasheet PD-94154B. RoHS, REACH, lead-free, and halogen-free status not explicitly stated in the verified web data; set to 'unknown'. Conflict-minerals compliance assumed as standard for major semiconductor manufacturers but not verified in the provided data.
