MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MPN： MRF5S19060NBR1 ✓ 啟用中MRF5S19060NBR1 概覽
An RF Power MOSFET is a laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power amplification. In the amplifier taxonomy it sits under RF power transistor -> power MOSFET -> MOSFET -> discrete semiconductor. These devices use a laterally diffused channel to reduce parasitic capacitances, allowing operation at GHz frequencies while still handling tens of watts of continuous RF power. The MRF5S19060N family is part of NXP's classic 28 V base-station driver lineup.
Key electrical features include a 28 V typical drain supply, 14 dB power gain at 1.99 GHz, and a thermally-enhanced TO-272 WB-4 overmolded package that lowers thermal resistance compared with earlier ceramic flanges. Two matched die are provided in the single package (2 x N configuration) which simplifies push-pull or parallel-combined amplifier layouts and lets the designer realize wider bandwidths with fewer external matching components.
Architecturally the part uses NXP's high-voltage LDMOS process combined with a thermally-conductive plastic overmold and an exposed copper flange. The lateral structure minimizes feedback capacitance and gate-to-drain charge, which is what enables 14 dB of gain and broadband operation in a single-stage final PA. The 28 V bias typical of cellular base-station PAs also simplifies power-supply design in Doherty and class-AB final stages.
Typical applications are 1.9 GHz PCS / DCS / DECT base-station final PAs, 1930-1990 MHz industrial RF amplifiers, broadband driver stages for higher-power LDMOS finals, and public-safety / telemetry links requiring 12 W average at 1930-1990 MHz. Designers also use it as a gain block in two-way radio repeaters and laboratory RF power test amplifiers.
When designing in this part, follow NXP reference designs for PCB material (typically RO4003 or similar low-loss laminate), apply recommended bias sequencing to avoid thermal runaway, and ensure the copper mounting footprint provides a low thermal-impedance path to the system heatsink. The overmolded package eliminates traditional bolt-down flange mounting, simplifying assembly but requiring careful thermal pad solder processing.
This page synthesizes distributor pricing, RF application guidance, and pin-compatible alternatives not found on a single manufacturer or distributor page.
直接替換替代品，適用於 MRF5S19060NBR1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MRF5S19060NBR1 （相同外形與佔位） — 差異在於 Transistor Type, Package, Mounting Type, Application, Frequency Band.
MRF5S19060NR1
✅ 直接替換聯絡詢價
查看資料表 →MRF6S18100NR1
✅ 直接替換📋 參考替代品（不在目錄中）
MRF5S21045NR1
✅ 直接替換📋 參考替代品（不在目錄中）
MRF5S19060NBR1 最大額定值與電氣特性
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Configuration | Dual Die (2 x N), Common Source |
| Frequency Band | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | 60 W (CW/peak) |
| Output Power (Average) | 12 W avg. |
| Drain Supply Voltage | 28 V (typical) |
| Drain-Source Voltage (Vdss) | 65 V (max) |
| Power Gain | 14 dB at 1.99 GHz |
| Drain Current | 750 mA (typical operating DC) |
| 封裝 | TO-272 WB-4 (overmolded plastic) |
| 安裝類型 | Surface Mount (SMD) |
| 腳位數 | 5 |
| Peak Reflow Temperature | 260 C |
| Maximum Power Dissipation (Absolute) | 218.8 W |
| Technology | Silicon LDMOS |
MRF5S19060NBR1 腳位配置
| 腳位 1 | Drain — Drain (RF output, internally matched) |
| 腳位 2 | Gate — Gate (RF input, internally matched) |
| 腳位 3 | Source — Source / thermal ground |
| 腳位 4 | NC — Not connected (per datasheet) |
| 腳位 5 | Drain2 — Second die drain (for push-pull balance) |
DC 安全工作區 (estimated, refer to NXP datasheet curves)
典型應用
MRF5S19060NBR1 適用於 6 應用s: 1.9 GHz PCS / DCS Base Station Final PA, Broadband Driver for High-Power LDMOS Final, Industrial 1.9 GHz RF Amplifier, Two-Way Radio Repeater PA Stage, Public-Safety / Telemetry Link Amplifier, RF Power Test and Measurement Amplifier.
1.9 GHz PCS / DCS Base Station Final PA
The MRF5S19060NBR1 is purpose-built for 1930-1990 MHz base-station final-stage power amplifiers in PCS / DCS networks. Its 14 dB gain and 60 W P1dB / 12 W average output from a 28 V rail match the dynamic range requirements of multi-carrier LTE-style signals. Placed between the driver LDMOS and the output isolator/filter, it operates class-AB for linearity, with Idq around 750 mA. The TO-272 WB-4 overmolded package eliminates flange-mount hardware and simplifies factory SMT reflow assembly, reducing both BOM cost and assembly time. Compared with older ceramic-flanged devices at the same frequency, the copper thermal slug drops RthJC by a meaningful margin and improves long-term reliability under high-duty-cycle traffic.
推薦
Broadband Driver for High-Power LDMOS Final
The MRF5S19060NBR1 sits comfortably as a 12 W average driver in front of an NXP AFT18 or AFT09-series final LDMOS in macro-cell base-station PAs. Its 14 dB gain and broad 60 MHz instantaneous bandwidth at the 1.9 GHz band supply the headroom needed to push a 100 W+ final stage to saturation. The 28 V bias aligns directly with the family bias rail of most modern Doherty combiners, eliminating level shifters. In the driver position the device is operated well below its 60 W P1dB ceiling (typically 5-10 W average) which significantly derates the junction and gives MTBF improvement versus operating at full output. The overmolded body simplifies the thermal path back to the system heatsink via the copper spreader.
推薦
Industrial 1.9 GHz RF Amplifier
Industrial RF heating, plasma generation and dielectric drying frequently operate near 1.99 MHz in allocated ISM-adjacent bands, and the MRF5S19060NBR1 is well-suited to those applications thanks to its 28 V high-power LDMOS design. The dual-die 2 x N internal configuration lets the designer build push-pull amplifiers with fewer external balance transformers, improving even-order harmonic suppression. At 12 W average the device runs well within its 218.8 W absolute dissipation rating, leaving large thermal safety margin for 100% continuous-duty industrial cycling. The overmolded TO-272 WB-4 package also tolerates factory floor vibration better than glass-sealed ceramic RF parts, giving longer field life.
推薦
Two-Way Radio Repeater PA Stage
Repeater infrastructure for 1.9 GHz DECT-microwave and private mobile radio systems uses the MRF5S19060NBR1 as a 12 W average linear PA in the downlink path. Its 14 dB gain reduces driver-stage count, while the 28 V rail matches the standard -48 V telecom plant (via an isolated 28 V DC-DC bus). Built around class-AB bias with a few hundred mA Idq, the device delivers a good balance of IMD3/IMD5 linearity versus DC efficiency, suiting multi-tone telemetry and digital repeater traffic. The lateral MOSFET construction also gives excellent ruggedness into open and short-circuits - important for tower-mounted repeaters fed via long coax runs.
推薦
Public-Safety / Telemetry Link Amplifier
Fixed point-to-point telemetry links in the 1930-1990 MHz band benefit from the MRF5S19060NBR1's broadband match and 12 W average output capability. The device maintains flat gain across the full 60 MHz band, allowing a single design to ship into multiple regional channel plans without retuning. Because public-safety links are typically narrow-band but high-duty-cycle, the high dissipation margin (218.8 W absolute for only ~15 W typical RF+DC) derates the junction substantially, extending service intervals. The TO-272 WB-4 footprint accepts either reflow-soldered SMT assembly or low-profile clip-mount heat-sink attachment for outdoor enclosure designs.
推薦
RF Power Test and Measurement Amplifier
ATE benches and laboratory power amplifiers use the MRF5S19060NBR1 as a known-good 60 W P1dB device for characterizing sensors, antenna patterns, and EMI immunity at 1.99 GHz. With its 14 dB small-signal gain, a generic -10 dBm laboratory source can be amplified to the full 12 W average directly. Because the part is broadband across 1930-1990 MHz, a single bench amplifier covers multiple cellular and telemetry channels without filter banks. The dual-die 2 x N package simplifies balanced amplifier topologies used in test sets, improving even-order rejection in sensitive measurement chains.
推薦
推薦產品摘要
工程參考資料，適用於 MRF5S19060NBR1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MRF5S19060NR1 | MRF6S18100NR1 | MRF5S21045NR1 |
|---|---|---|---|---|
| Package | TO-272 WB-4 (overmolded, 5-pin) | TO-272 WB-4 (overmolded, 5-pin) - same | TO-272 WB-4 (overmolded, 5-pin) - same | TO-272 WB-4 (overmolded, 5-pin) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 1930-1990 MHz | 1930-1990 MHz - same | 1805-1880 MHz | 2110-2170 MHz |
| Output Power (P1dB) | 60 W | 60 W - same | 100 W | 45 W |
| Drain Supply Voltage | 28 V | 28 V - same | 28 V | 28 V |
| Delivery Packaging | Tape & Reel | Tray | Tray (R1) | Tray (R1) |
| Configuration | 2 x N (dual die) | 2 x N - same | Single-ended | Single-ended |
主要差異化特點
- Tape-and-reel factory packaging for SMT assembly (對比MRF5S19060NR1)
- Drop-in same-die alternative in identical TO-272 WB-4 package (對比MRF5S19060NR1)
- Highest P1dB in its frequency slice among the listed family (對比MRF5S21045NR1)
設計說明
Estimated: with 12 W average RF output and ~30% PAE, the device dissipates roughly 28 W as heat. The TO-272 WB-4 package relies on a copper spreader and PCB backside copper to move this heat to a system heatsink; without at least 10 sq cm of 2 oz copper directly beneath the thermal pad, junction temperature can exceed 150 C under continuous duty. Mount on RO4003 or FR4 with a low-loss thermal via pattern, and use thermal interface material rated for >1 W/m-K.
Use RO4003C or similar low-loss laminate at 0.5-0.8 mm thickness for the matching network region. Keep all 50 ohm microstrip traces well away from digital / noisy rails, and place the input and output matching networks on opposite sides of the device to maximize isolation. Decouple Vdd with a 10 uF tantalum plus 100 nF + 10 nF ceramic network within 5 mm of the drain feed.
Do not exceed the 65 V Vdss absolute maximum - inductive kickback from poor drain bias decoupling can punch through the die. Always apply Vgs first and remove it last during power-down sequencing to prevent thermal runaway. Do not solder without a profile calibrated for the overmolded plastic body - the 260 C peak reflow ceiling must not be exceeded or the internal copper-flange attach will delaminate.
合規資訊
RoHS compliance inferred from NXP's lead-free overmolded package designation, but exact RoHS/Reach certificates were not returned in the verified web data. The part is not AEC-Q100 qualified - it is a discrete RF power transistor for base-station / industrial use, not automotive. Reach and CFSI conflict-minerals statements follow NXP standard policy.
