MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
MPN： MRF6S21060BR1 ✗ 停產MRF6S21060BR1 概覽
An RF power MOSFET is a specialized transistor designed to amplify radio-frequency signals at high power levels with high gain and efficiency. In the device hierarchy, the MRF6S21060BR1 sits as LDMOS -> RF power transistor -> power amplifier device -> discrete semiconductor. Laterally diffused MOSFETs dominate macro-cell base station power amplifiers because they offer a superior gain-versus-bandwidth tradeoff, higher breakdown voltage than GaAs, and lower cost-per-watt than GaN for sub-100W applications.
Key features include a 68 V drain-source voltage rating, 15.5 dB power gain at 2.12 GHz, integrated ESD protection, and a thermally enhanced ceramic package qualified for demanding base-station thermal environments. The internal matching network simplifies board layout and reduces external component count, while the gold metallization ensures long-term reliability under elevated junction temperatures.
Architecturally, the MRF6S21060BR1 uses an N-channel enhancement-mode LDMOS structure on a ceramic substrate with internal input and output matching. This lateral diffusion geometry minimizes parasitic capacitance while maximizing breakdown, making it well-suited to high-efficiency Doherty and Class AB final-stage designs where linearity and back-off efficiency are mission-critical.
Typical applications include W-CDMA/HSPA+ and LTE base-station final-stage power amplifiers, multi-carrier GSM/EDGE amplifier drivers, TD-SCDMA infrastructure, and general-purpose 2.1 GHz industrial RF amplification. The wide bandwidth also covers the 2110-2170 MHz band used by UMTS operators worldwide.
When designing with this device, ensure adequate heatsinking of the ceramic flange and that the drain supply rail includes proper RF bypass and decoupling close to the package leads. Bias sequencing (gate before drain) is required to prevent device damage during turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 MRF6S21060BR1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MRF6S21060BR1 （相同外形與佔位） — 差異在於 Power Gain, Target Application, Transistor Type.
MRF6S21060NBR1
✅ 直接替換聯絡詢價
查看資料表 →MRF6S21060NR1
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
MRF6S18140BR1
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
A2I22D050N
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
BLF6G21-14
✅ 直接替換📋 參考替代品（不在目錄中）
PTFA210601E
✅ 直接替換📋 參考替代品（不在目錄中）
MRF6S21060BR1 最大額定值與電氣特性
| 電晶體類型 | N-Channel Enhancement-Mode LDMOS |
| Drain-Source Voltage (Vdss) | 68 V |
| Test Voltage | 28 V |
| Test Current | 610 mA |
| Output Power (Pout) | 14 W |
| Power Gain | 15.5 dB at 2.12 GHz |
| Frequency Range | Up to 2170 MHz |
| Operating Mode | Class AB |
| 封裝 / 外殼 | TO-272 WB-4 (ceramic) |
| 安裝類型 | Surface Mount / Flange Mount |
| Lead Free Status | Lead Free |
| Target Application | W-CDMA base station final-stage PA |
| Suitable For | TDMA, CDMA, multicarrier amplifier applications |
| Current Rating (Datasheet) | 10 uA |
| Manufacturer | NXP (formerly Freescale Semiconductor) |
MRF6S21060BR1 腳位配置
| 腳位 1 | RF Input — Gate - RF input to LDMOS transistor, 50 ohm nominal |
| 腳位 2 | Drain — 28 V Vdd supply with RF drain signal |
| 腳位 3 | RF Output — Drain RF output to matching network |
| 腳位 4 | Flange/Case — Source and thermal ground - bolted to heatsink |
安全工作區
典型應用
MRF6S21060BR1 適用於 6 應用s: W-CDMA Base Station Final-Stage Power Amplifier, LTE/HSPA+ Multi-Carrier Amplifier Driver Stage, 2.1 GHz Industrial / Test RF Power Amplifier, Repeater / Pico-Cell Downlink Amplifier, Aerospace / Defense 2.1 GHz RF Power Stage, W-CDMA Doherty Amplifier Output Stage.
W-CDMA Base Station Final-Stage Power Amplifier
The MRF6S21060BR1 is purpose-built for W-CDMA base-station final-stage PAs in the 2110-2170 MHz UMTS Band I downlink. The 15.5 dB power gain at 2.12 GHz and 14 W Pout deliver usable linear output after crest-factor back-off for the high-PAPR 3GPP signal, while 28 V operation aligns with standard macro-cell BTS -48V/-52V telecom bus rails. Class AB bias at 610 mA gives the linearity needed to meet W-CDMA ACLR masks at 5 MHz offset.
推薦
LTE/HSPA+ Multi-Carrier Amplifier Driver Stage
Beyond single-carrier W-CDMA, the MRF6S21060BR1 supports TDMA, CDMA, and multicarrier amplifier applications per the manufacturer datasheet. Its 14 W Pout and 15.5 dB gain are well-suited to driver stages in multi-carrier GSM/EDGE or 4x4 MIMO LTE lineups where the upstream signal is pre-conditioned and clean. The 68 V V(BR)DSS breakdown gives ample margin against VSWR mismatch spikes during antenna fault events.
推薦
2.1 GHz Industrial / Test RF Power Amplifier
Industrial RF heating, EMC susceptibility testbeds, and laboratory CW amplifiers in the 2.1-2.2 GHz ISM-adjacent band can leverage the MRF6S21060BR1's 14 W continuous output. The ceramic TO-272 WB-4 package provides robust thermal coupling to the heatsink for sustained CW operation without derating. Bias is straightforward at 28 V / 610 mA, and gain flatness across the 60 MHz UMTS band provides clean amplitude response for instrument-grade applications.
推薦
Repeater / Pico-Cell Downlink Amplifier
Cellular repeaters and pico-cell downlink amplifiers retransmit the BTS signal at lower power in indoor or shadowed areas. The MRF6S21060BR1 fits this role because its 15.5 dB gain at 2.12 GHz provides the necessary gain budget while keeping linearity adequate for retransmission of UMTS signals. Small form factor ceramic packaging simplifies integration into compact indoor-unit enclosures, and 28 V supply matches typical PoE-fed repeater internal rails after DC-DC conversion.
推薦
Aerospace / Defense 2.1 GHz RF Power Stage
Aerospace and defense platforms operating in the 2.1-2.17 GHz range - including radar sub-band transmitters, secure-data links, and EW equipment - can use the MRF6S21060BR1 for compact high-gain RF output stages. Its 68 V breakdown, ESD protection, and ceramic hermetic-style package deliver the ruggedness required for military and avionics environments. Designers should verify the part's qualification status against the platform's derating and reliability requirements before flight.
推薦
W-CDMA Doherty Amplifier Output Stage
In Doherty PA architectures, the carrier amplifier handles full-power peaks while the peaking amplifier boosts back-off efficiency. The MRF6S21060BR1's 15.5 dB gain and linear Class AB characteristics make it suitable for the carrier or peaking sub-amplifier role in 2.1 GHz Doherty lineups, where high efficiency at 6-10 dB back-off is critical for thermal and DC-power budgets. Engineers pair it with proper 90-degree phase-offset quadrature networks to achieve Doherty peaking action.
推薦
推薦產品摘要
工程參考資料，適用於 MRF6S21060BR1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MRF6S21060NBR1 | MRF6S21060NR1 | BLF6G21-14 | PTFA210601E |
|---|---|---|---|---|---|
| Package | TO-272 WB-4 | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-270 WB-14 - flange ceramic family | TO-270 WB-14 - flange ceramic family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Infineon |
| Output Power (Pout) | 14 W | 14 W | 14 W | 14 W | 14 W |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Operating Frequency | Up to 2170 MHz | Up to 2170 MHz | Up to 2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Topology | Single-ended LDMOS | Single-ended LDMOS | Single-ended LDMOS | Single-ended LDMOS | Single-ended LDMOS |
主要差異化特點
- W-CDMA-specific characterization and internal matching network (對比BLF6G21-14)
- Single transistor (no integrated two-stage) simplifies biasing (對比A2I22D050N)
- Established supply chain with multiple distributors still listing stock (對比A2I22D050N)
設計說明
Estimated: at 14 W Pout with typical 30% DC-to-RF efficiency, roughly 33 W is dissipated in the device. The TO-272 WB-4 ceramic flange has a junction-to-case thermal resistance of approximately 1.2 C/W per the NXP datasheet family; this gives a Tj-rise of ~40 C above the heatsink surface. Mount the flange with proper torque (2-3 in-lb) using a thin layer of thermal compound, and verify heatsink temperature at the case-flange interface stays below 70 C in worst-case ambient.
Place RF choke (typically 56 nH to 100 nH wirewound) directly at the drain lead and minimize the drain-to-choke lead length to reduce parasitic inductance. Use multiple low-ESR ceramic bypass capacitors (10 uF / 1 uF / 100 nF) on the drain rail within 3 mm of the package lead. Keep gate and drain traces short and use 50 ohm microstrip lines on a low-loss substrate (Rogers RO4350B or equivalent) for the matching network.
Apply Vgs (gate bias) before Vdd (drain bias) during power-up sequence and remove Vdd before Vgs during shutdown to prevent device damage from drain-current runaway. Per the NXP datasheet, exceeding 68 V Vds will permanently damage the LDMOS die. Do not operate without a heatsink attached - even brief uncooled operation can exceed 200 C Tj. Always check that VSWR protection circuitry is enabled before hot-plugging antennas to the RF output path.
Use a high-thermal-conductivity PCB substrate (Rogers RO4350B, Taconic RF-35, or similar) for the matching network region. Do not mix FR-4 and RF substrate within the matching network because dielectric constant discontinuities alter the impedance match. Provide multiple grounded vias around the package flange to maximize thermal conduction through the PCB to a copper-clad heat-spreader if no bottom heatsink is used.
合規資訊
Lead-free per Verified Web Data snippet from chipdig.com. RoHS, REACH, halogen-free, and conflict-mineral compliance not explicitly stated in provided web data - marked unknown.
