MRF7S38040HSR5 - 8W 3.6GHz RF Power MOSFET | NXP Semiconductors
MPN： MRF7S38040HSR5 ✓ 啟用中MRF7S38040HSR5 概覽
A power MOSFET is a voltage-controlled semiconductor switch and amplifier built around a metal-oxide gate that controls current flow between source and drain terminals. RF power MOSFETs are a subclass of discrete MOSFETs that integrate input/output matching networks and thermal management into a single ceramic-flange package, enabling high RF power density at microwave frequencies. In the hierarchy, MRF7S38040HSR5 belongs to: RF MOSFET -> power MOSFET -> MOSFET -> discrete semiconductor -> active component.
Key specifications include 30 V drain voltage rating, 450 mA typical quiescent drain current, 14 dB minimum power gain at 3.6 GHz, 8 W output power, and operation across the 3.4 GHz to 3.6 GHz band. The NI-400S-2S package provides a flanged ceramic body with bolt-down mounting for direct attachment to a heatsink or PCB copper heat-spreader, allowing sustained CW and pulsed operation in Doherty amplifier topologies.
The internal LDMOS architecture provides high breakdown voltage, excellent thermal stability under mismatch, and broadband response. NXP's LDMOS process minimizes source-lead inductance and integrates ESD protection, making the MRF7S38040HSR5 tolerant of high VSWR conditions commonly encountered in field-deployed base-station amplifiers.
Typical applications include 3.5 GHz WiMAX base-station power amplifiers, LTE small-cell driver stages, point-to-point microwave links, and Doherty final-stage amplifiers where high gain, linearity, and ruggedness are required. The 14 dB gain allows two-stage designs with lower-cost predrivers.
When designing with this device, attention must be paid to PCB layout, source-lead grounding (multiple low-inductance vias), and adequate heatsinking. Designers must also provide a 30 V regulated drain supply with sequenced gate bias and follow the recommended bias sequence in the manufacturer datasheet to avoid device stress.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet for engineers selecting a 3.5 GHz band RF power transistor.
直接替換替代品，適用於 MRF7S38040HSR5 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MRF7S38040HSR5 （相同外形與佔位） — 差異在於 Mounting Type, Output Power (Pout), Package / Case, Power Gain, Quiescent Drain Current (Idq).
MRF7S38010HSR5
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MRF7S38075HSR5
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
MRF6S38050HSR5
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
MRF7S38040HSR5 最大額定值與電氣特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF7S38040HSR5 |
| 電晶體類型 | RF Power MOSFET (LDMOS) |
| Technology | LDMOS, N-channel |
| Drain-Source Voltage (Vds) Max | 65 V |
| Operating Drain Voltage | 30 V |
| Quiescent Drain Current (Idq) | 450 mA (typical) |
| Frequency Range | 3.4 GHz to 3.6 GHz |
| Output Power (Pout) | 8 W (CW) |
| Power Gain | 14 dB (minimum) |
| 封裝 / 外殼 | NI-400S-2S |
| 安裝類型 | Chassis / Flange Mount (ceramic) |
| 工作溫度 | -40C to +150C (junction) |
MRF7S38040HSR5 腳位配置
| 腳位 1 | DRAIN — RF output / drain bias |
| 腳位 2 | GATE — RF input / gate bias |
| 腳位 3 | SOURCE — Source lead (ground) |
| 腳位 FLANGE | FLANGE — Bolt-down flange / thermal pad / source ground |
安全工作區 (DC, CW)
典型應用
MRF7S38040HSR5 適用於 6 應用s: 3.5 GHz WiMAX Base-Station Power Amplifier, LTE Small-Cell Driver Amplifier, Doherty Power Amplifier Peaking Stage, Point-to-Point Microwave Link Driver, Public-Safety Broadband (CBRS) Amplifier, Industrial / Scientific RF Power Source.
3.5 GHz WiMAX Base-Station Power Amplifier
The MRF7S38040HSR5's 8 W output power and 14 dB gain across 3.4 GHz to 3.6 GHz make it well suited for the final stage of WiMAX base-station power amplifiers. It is biased at 30 V on the drain with a typical Idq of 450 mA, delivering enough linear power for fixed WiMAX CPE and base-station line-ups. The 14 dB gain reduces predriver complexity, and NXP's LDMOS process provides high efficiency at 6-8 dB back-off typical of OFDMA signals.
推薦
LTE Small-Cell Driver Amplifier
In LTE small-cell base stations operating in LTE Band 42/43 (3.4-3.6 GHz), the MRF7S38040HSR5 serves as a driver stage before higher-power final transistors. Its 14 dB gain allows the LNA output to drive it directly to 8 W, simplifying the BOM. The NI-400S-2S ceramic flange provides consistent thermal coupling in the compact small-cell chassis, and the device's ruggedness against high VSWR protects the small-cell hardware in field deployments.
推薦
Doherty Power Amplifier Peaking Stage
The MRF7S38040HSR5 is a good fit for peaking-amplifier positions in Doherty line-ups at 3.5 GHz. With 8 W saturated power and NXP's LDMOS architecture, it handles the high crest factors of LTE/WiMAX signals while preserving linearity. Its 14 dB gain ensures symmetric gain between main and peaking paths, simplifying the Doherty combiner design and improving overall efficiency by 5-8 percentage points versus Class-AB.
推薦
Point-to-Point Microwave Link Driver
In point-to-point microwave links operating at 3.5 GHz, the MRF7S38040HSR5 can serve as the driver stage before the final high-power amplifier. Its 8 W output and 14 dB gain give the design headroom for the link-budget margin, and the 30 V operation simplifies the supply design in outdoor radio units. NXP's LDMOS process provides reliable operation across wide temperature ranges encountered in outdoor enclosures.
推薦
Public-Safety Broadband (CBRS) Amplifier
Citizens Broadband Radio Service (CBRS) operates in the 3.5 GHz band, and the MRF7S38040HSR5's 3.4 GHz to 3.6 GHz coverage matches CBRS spectrum allocations. With 8 W output and 14 dB gain, the device supports small-cell CBRS deployments for public-safety broadband networks, where ruggedness and efficiency at back-off are critical. Its NXP LDMOS construction provides the long-term reliability required for public-safety infrastructure.
推薦
Industrial / Scientific RF Power Source
Beyond telecom, the MRF7S38040HSR5 can drive industrial or scientific microwave sources in the 3.4 GHz to 3.6 GHz band, including plasma generators, materials processing, and microwave heating applications. Its 8 W CW capability, 30 V drain bias, and NI-400S-2S bolt-down flange allow direct heatsink mounting for sustained CW duty cycles. NXP's LDMOS technology provides the ruggedness required for industrial-grade service.
推薦
推薦產品摘要
工程參考資料，適用於 MRF7S38040HSR5 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MRF7S38010HSR5 | MRF7S38075HSR5 | MRF6S38050HSR5 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-400S-2S | NI-400S-2S - same | NI-400S-2S - same | NI-400S-2S - same |
| Output Power (CW) | 8 W | ~1 W | ~75 W | ~5 W |
| Operating Frequency | 3.4 to 3.6 GHz | 3.4 to 3.6 GHz | 3.4 to 3.6 GHz | 3.4 to 3.8 GHz |
| Drain Voltage (typical) | 30 V | 30 V | 30 V | 30 V |
| Power Gain (min) | 14 dB | 14 dB | 12 dB | 14 dB |
| Technology Generation | LDMOS Gen 7 | LDMOS Gen 7 | LDMOS Gen 7 | LDMOS Gen 6 |
| Mounting Type | Flange / Chassis | Flange / Chassis | Flange / Chassis | Flange / Chassis |
主要差異化特點
- Higher output power with same package footprint (對比MRF7S38010HSR5)
- Newer-generation LDMOS process for higher efficiency (對比MRF6S38050HSR5)
- 14 dB minimum gain enables two-stage designs (對比MRF7S38075HSR5)
設計說明
The MRF7S38040HSR5 NI-400S-2S ceramic package must be bolted to a flat heatsink with thermal compound applied; the bolt-down flange is the primary thermal path. Estimated: at 8 W RF output, 30 V bias, and ~10% efficiency in early-stage prototypes, the device may dissipate 25-30 W, requiring a heatsink with thermal resistance below 1 C/W to keep junction below 150C. Insufficient heatsinking is the most common cause of premature failure.
Source-lead grounding is critical for stable RF performance. Use multiple low-inductance vias around the source pad area connecting to a continuous ground plane. Keep gate and drain transmission lines (typically microstrip on Rogers RO4350B or similar low-loss substrate) away from each other to avoid unintended feedback. Place the drain bias choke and decoupling capacitors close to the drain pin to suppress low-frequency oscillations.
Always sequence gate bias before drain bias to prevent device stress; never apply drain voltage without gate bias established. The 30 V regulated drain supply should have adequate decoupling (10 uF electrolytic plus 100 nF ceramic near the device) and current capability for 8 W operation. Add gate-source Zener protection (typically 12 V) to prevent ESD damage during handling and turn-on transients.
Place the input matching network and output matching network symmetrically with respect to the device. Use bond-wire compensation if the package is mounted in a fixture rather than directly on the PCB. For Doherty amplifier designs, isolate the main and peaking amplifier paths with sufficient physical separation (typically 5-10 mm) to minimize cross-coupling and ensure stable combining.
Common pitfalls include: applying 30 V drain without gate bias (causes device damage), exceeding 65 V Vds max, operating into an open or shorted load (causes high VSWR stress), and insufficient heatsinking at CW operation. Always include a circulator or isolator at the output for protection against antenna mismatches. Verify the bias sequence matches the manufacturer datasheet recommended startup procedure before applying RF drive.
合規資訊
RoHS / REACH / lead-free / halogen-free status not present in the verified web data; marked unknown per Data Authenticity Rules. The device is not AEC-Q100 qualified (RF power transistors are typically not automotive-qualified).
