MRF8S21100HR5 - 100W 2.17GHz RF Power MOSFET | NXP
MPN： MRF8S21100HR5 ✗ 停產MRF8S21100HR5 概覽
An RF power MOSFET is a lateral or vertical metal-oxide-semiconductor field-effect transistor optimized to deliver radio-frequency power at high efficiency with controlled gain. In the broader taxonomy, it sits below RF transistor -> RF power transistor -> RF power amplifier device -> discrete RF semiconductor. RF MOSFETs are the dominant device technology in modern cellular base station power amplifiers because they offer excellent linearity, high gain, and repeatable performance in Class AB biasing for digitally modulated signals such as W-CDMA, LTE, and 5G NR.
Key features include a 65 V V(BR)DSS breakdown rating that provides ample headroom for 28 V operation, 18.3 dB gain at 2.17 GHz that reduces driver-stage complexity, and an enhancement-mode gate that simplifies bias circuits because no negative gate voltage is required to keep the device off. The NI-780H ceramic flange package provides low thermal resistance for proper heatsinking in RF amplifier modules, and the case-465-06 industry-standard footprint enables reuse of proven pallet layouts across amplifier generations.
The MRF8S21100HR5 uses NXP's HV8 (high-voltage 8th-generation) LDMOS process technology, which combines high breakdown voltage, high gain, and excellent thermal performance. This process is engineered for Doherty and Class AB PA topologies that are widely used in modern macro-cell and micro-cell base station transmitters for 3G/4G/5G radio access networks. The LDMOS architecture provides good RF ruggedness into mismatch conditions commonly encountered in field-deployed antenna systems.
Typical applications include W-CDMA/LTE base station power amplifiers, Doherty amplifier final stages, and Class AB linear RF amplifiers in cellular infrastructure equipment operating between 2110 MHz and 2170 MHz. The high gain and 65 V breakdown make it equally suitable for driver stages in higher-power amplifier chains.
When designing with this device, careful attention must be paid to PCB material selection (low-loss RF laminates recommended), heatsink mounting torque (per case 465-06 specifications), and proper drain bias sequencing to prevent parametric drift. Use of double-shielded RF test fixtures is recommended during characterization to avoid oscillation in the 2 GHz region.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an engineering-focused view of the MRF8S21100HR5 for base station RF power amplifier designers.
直接替換替代品，適用於 MRF8S21100HR5 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MRF8S21100HR5 （相同外形與佔位） — 差異在於 Manufacturer, Mounting Type, Power Gain, Technology, Test Current.
MRF8HP21080HR5
✅ 直接替換聯絡詢價
查看資料表 →MRF8S21100HS
✅ 直接替換📋 參考替代品（不在目錄中）
MRF8S19140HR5
✅ 直接替換📋 參考替代品（不在目錄中）
MRF8S18120HR5
✅ 直接替換📋 參考替代品（不在目錄中）
SD57030
✅ 直接替換📋 參考替代品（不在目錄中）
MRF8S21100HR5 最大額定值與電氣特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| 電晶體類型 | N-Channel RF Power MOSFET |
| Polarity | N-Channel |
| Operating Mode | Enhancement |
| Technology | LDMOS (HV8 generation) |
| Drain-Source Breakdown Voltage V(BR)DSS | 65 V |
| Test Voltage (Drain) | 28 V |
| Test Current | 700 mA |
| Frequency of Operation | 2.17 GHz (max, typical 2110-2170 MHz) |
| Power Gain | 18.3 dB at 2.17 GHz |
| Output Power (P1dB / pulsed) | 100 W |
| Output Power (typical application) | 24 W |
| 封裝 | NI-780H-2L (Case 465-06), 2-pin ceramic flange |
| 安裝類型 | Surface Mount / Flange Mount |
| RoHS 狀態 | RoHS Compliant |
| Operating Class | Class AB, Class C |
| Application | W-CDMA, LTE cellular base station |
MRF8S21100HR5 腳位配置
| 腳位 1 | GATE — RF input gate bias connection |
| 腳位 2 | DRAIN — RF output drain bias connection (case is source) |
DC 安全工作區
典型應用
MRF8S21100HR5 適用於 6 應用s: W-CDMA Base Station Power Amplifier, LTE Macro-Cell Doherty Amplifier, Cellular Infrastructure Driver Stage, Class AB Linear RF Amplifier, 5G NR Small-Cell Power Amplifier, Repeater and Booster Amplifier Module.
W-CDMA Base Station Power Amplifier
The MRF8S21100HR5 is well-suited as the final or driver stage in macro-cell W-CDMA base station power amplifiers operating in the 2110-2170 MHz downlink band. Its 18.3 dB gain at 2.17 GHz minimizes the complexity of the preceding driver chain, while the 24 W typical output power and 65 V breakdown rating provide ample headroom for Class AB linear amplification of W-CDMA signals with peak-to-average ratios up to 10 dB. The HV8 LDMOS technology delivers the linearity required to meet 3GPP adjacent-channel leakage ratio (ACLR) specifications at 28 V bias.
推薦
LTE Macro-Cell Doherty Amplifier
In Doherty amplifier architectures for LTE macro-cell transmitters, the MRF8S21100HR5 serves effectively as either the main or peaking amplifier device due to its high gain and ruggedness into mismatched loads. Its 65 V V(BR)DSS rating tolerates the load modulation transients inherent to Doherty operation, where the peaking device presents a high impedance to the main device at low output power. The 18.3 dB gain reduces the required driver-stage gain and improves overall PA efficiency across the wide LTE power back-off range.
推薦
Cellular Infrastructure Driver Stage
The MRF8S21100HR5 functions as an excellent intermediate driver stage in multi-stage high-power base station amplifiers where its 18.3 dB gain is required to drive a higher-power final device. Operating at 28 V bias with 24 W typical output, it provides sufficient drive level for 80-100 W class final MOSFETs such as the MRF8HP21080HR5 while maintaining low distortion. The 65 V breakdown provides protection against transient mismatches that propagate from the final-stage load through the driver chain.
推薦
Class AB Linear RF Amplifier
In Class AB linear RF amplifier designs for cellular base station applications, the MRF8S21100HR5's HV8 LDMOS process provides the linearity required for spectrally efficient modulation formats including W-CDMA, LTE, and 5G NR. At 28 V bias and 700 mA quiescent current, it delivers 24 W typical output with high power-added efficiency and the thermal stability needed for continuous-operation base station duty cycles. The NI-780H-2L ceramic flange package enables effective heatsinking for sustained linear operation.
推薦
5G NR Small-Cell Power Amplifier
For 5G NR small-cell base station power stages operating in the 2110-2170 MHz band, the MRF8S21100HR5 offers the gain, efficiency, and form factor required in compact small-cell radios. Its high 18.3 dB gain enables smaller amplifier lineups with fewer stages, reducing board area and BOM cost for space-constrained small-cell deployments. The 65 V breakdown and LDMOS ruggedness provide reliable operation in outdoor small-cell units exposed to VSWR variations from antenna installations.
推薦
Repeater and Booster Amplifier Module
The MRF8S21100HR5 is well-suited for cellular signal repeater, booster, and bi-directional amplifier modules used to extend coverage in indoor venues, tunnels, and fringe-signal areas. Operating in the 2110-2170 MHz downlink band at moderate output power (24 W typical), it provides the linearity required for low-EVM signal regeneration without adding significant spectral regrowth. The 65 V breakdown rating tolerates the imperfect antenna matching typical of distributed indoor antenna systems.
推薦
推薦產品摘要
工程參考資料，適用於 MRF8S21100HR5 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MRF8HP21080HR5 | MRF8S21100HS | MRF8S19140HR5 | MRF8S18120HR5 | SD57030 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | STMicroelectronics |
| Package | NI-780H-2L (Case 465-06) | NI-780H-2L (Case 465-06) - same | NI-780HS (Case 465A-06) - same family, straight leads | NI-780H-2L (Case 465-06) - same | NI-780H-2L (Case 465-06) - same | NI-780H equivalent ceramic flange |
| V(BR)DSS (Maximum) | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Output Power (Typical) | 24 W | 80 W | 24 W | 20 W | 20 W | 30 W |
| Frequency | 2.17 GHz | 2.17 GHz | 2.17 GHz | 1.99 GHz | 1.99 GHz | 2.17 GHz |
| Gain at Test Frequency | 18.3 dB | 16.5 dB | 18.3 dB | 17.5 dB | 17.5 dB | 16 dB |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Technology | LDMOS HV8 | LDMOS HV8 | LDMOS HV8 | LDMOS HV8 | LDMOS HV8 | LDMOS |
主要差異化特點
- Higher gain at 2.17 GHz than the MRF8HP21080HR5 (對比MRF8HP21080HR5)
- Same NI-780H-2L ceramic package as the entire MRF8S21100 family (對比MRF8S21100HS)
- 2.17 GHz band optimized vs lower-band NXP family members (對比MRF8S19140HR5)
- NXP reference design ecosystem vs STMicroelectronics alternative (對比SD57030)
設計說明
The NI-780H-2L ceramic flange package requires direct mounting to a properly machined heatsink with thermal compound applied per NXP Case 465-06 mechanical specifications. Mounting torque must follow the datasheet recommendation (typically 1.0-1.5 N·m) to ensure low thermal resistance and prevent flange cracking. At 24 W RF output with 28 V bias and typical PAE of 35%, the device dissipates approximately 45 W as heat, requiring a heatsink thermal resistance below 0.6 °C/W to keep junction temperature below the 200 °C rating.
Use low-loss RF PCB laminates such as Rogers RO4350B or RO4003C with controlled impedance (typically 50 Ω microstrip or stripline) for the input and output matching networks. The PCB cutout under the NI-780H-2L leads must be sized to NXP's mechanical drawing so the leads can be soldered flush to the board edge. Ensure input and output matching network capacitors use C0G/NP0 ceramic dielectrics for stable performance at 2.17 GHz and minimal drift with temperature.
Avoid operating the MRF8S21100HR5 into a short-circuit or open-circuit load without proper isolator protection because high VSWR can drive the drain voltage above the 65 V V(BR)DSS rating and permanently damage the device. Ensure gate bias sequencing turns the gate voltage on first, then the drain supply, and reverses the order during shutdown to prevent parametric shift. Use ferrite beads or RF chokes on the gate and drain bias feeds to suppress low-frequency oscillations that can degrade linearity.
Place the gate and drain bias decoupling capacitors (typically 100 pF, 1 nF, 10 nF, and 10 µF in parallel) as close to the device leads as physically possible to suppress out-of-band oscillations. Keep the input matching network physically separated from the output matching network by at least one package width to minimize feedback coupling that could cause instability. Use a continuous ground plane on the layer beneath the RF traces to provide a low-inductance return path and prevent common-mode resonances.
合規資訊
RoHS compliant per NXP product page and DigiKey listing. Halogen-free status not explicitly confirmed in the verified web data. AEC-Q100 qualification not applicable - this is an RF power MOSFET designed for cellular infrastructure, not automotive.
