SI7460DP-T1-GE3 - 60V N-Ch TrenchFET PowerPAK SO-8 | Vishay
MPN： SI7460DP-T1-GE3 ✓ 啟用中SI7460DP-T1-GE3 概覽
A power MOSFET is a voltage-controlled semiconductor switch whose on-state resistance (RDS(on)) and switching speed determine efficiency in synchronous rectification, load switching, and DC-DC converter roles. TrenchFET technology reduces cell pitch and lowers on-resistance per unit area compared with older planar structures, while the PowerPAK SO-8 lands directly on the standard SO-8 dual footprint with a much larger metal pad for heat extraction. Within the Vishay portfolio, this places the SI7460DP between small-signal SOT-23 FETs and larger DPAK/TO-220 parts targeted at higher-current or higher-voltage rails.
Key features include a 60 V VDS rating with ±20 V VGS tolerance, 9.6 mΩ maximum RDS(on) at VGS=10 V, fast switching speeds optimized for SMPS stages, and a low 1.07 mm profile suitable for slim secondary-side synchronous-rectifier positions. The PowerPAK SO-8 provides substantially lower junction-to-ambient thermal resistance than a standard SO-8, typically allowing multi-amp operation without an external heatsink when placed on adequate copper.
The device uses a TrenchFET® silicon gate structure combined with Vishay's PowerPAK SO-8 packaging to minimize both conduction and switching losses. The exposed-drain pad construction routes heat directly into the PCB copper, lowering thermal impedance in steady-state operation compared with a standard SO-8 dual. The combination is engineered for high-frequency SMPS, secondary-side synchronous rectification, and motor-drive low-side switches where board space is constrained.
Typical applications include secondary-side synchronous rectification in isolated DC-DC converters, high-side and low-side switches in buck/boost converters, battery protection and load management in portable systems, and motor-drive half-bridges below 60 V. The 60 V rating provides margin above 24 V industrial rails and 48 V telecom buses.
When designing with this part, verify that the load current derates properly across TA and that the PCB copper area is sized to maintain junction temperature below the 150 °C absolute maximum. Drive the gate with a 10 V gate-drive stage to achieve the lowest RDS(on) and minimize conduction loss.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and PCB-layout guidance derived from the manufacturer datasheet and reference designs.
直接替換替代品，適用於 SI7460DP-T1-GE3 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
SI7460DP-T1-E3
✅ 直接替換📋 參考替代品（不在目錄中）
SI7465DP-T1-GE3
✅ 直接替換📋 參考替代品（不在目錄中）
Si7434DP-T1-GE3
✅ 直接替換📋 參考替代品（不在目錄中）
SI7460DP-T1-GE3 最大額定值與電氣特性
| FET Type | N-Channel MOSFET |
| Technology | TrenchFET® |
| Drain-Source Voltage (VDS) | 60 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | 11 A |
| RDS(on) Max at VGS=10 V | 9.6 mΩ |
| Power Dissipation (PD) at TA=25°C | 1.9 W (10 s pulse), 5.4 W steady-state on minimum pad |
| 工作接面溫度 | -55 °C to +150 °C |
| 封裝 | PowerPAK SO-8 |
| 安裝類型 | Surface Mount |
| Profile Height | 1.07 mm |
| MSL 等級 | 1 |
| RoHS 狀態 | Compliant (lead-free) |
| 無鹵素 | Yes (per IEC 61249-2-21) |
SI7460DP-T1-GE3 腳位配置
| 腳位 1 | S — Source |
| 腳位 2 | S — Source |
| 腳位 3 | S — Source |
| 腳位 4 | G — Gate |
| 腳位 5 | D — Drain |
| 腳位 6 | D — Drain |
| 腳位 7 | D — Drain |
| 腳位 8 | D — Drain |
安全工作區 (DC)
典型應用
SI7460DP-T1-GE3 適用於 6 應用s: Secondary-Side Synchronous Rectification, Buck Converter Low-Side Switch, Battery Protection and Load Switching, Motor Drive Low-Side Switch, Hot-Swap and Inrush Protection, LED Driver Power Stage.
Secondary-Side Synchronous Rectification
The SI7460DP-T1-GE3 is well-suited for secondary-side synchronous rectification in isolated DC-DC converters up to 48 V output, where its 9.6 mΩ RDS(on) at VGS=10 V minimizes conduction loss and improves overall efficiency compared to a Schottky diode. Its PowerPAK SO-8 footprint matches the standard SO-8 dual land pattern, enabling direct PCB migration from diode-based designs. With a 60 V VDS rating, the device provides adequate transient margin for 48 V telecom and industrial bus rails.
推薦
Buck Converter Low-Side Switch
In buck converter low-side positions, the SI7460DP-T1-GE3 acts as the synchronous rectifier switch, with its 9.6 mΩ RDS(on) keeping conduction loss low at multi-amp loads and its TrenchFET structure enabling fast switching at 300 kHz to 1 MHz SMPS frequencies. The 11 A continuous current rating supports high-current point-of-load regulators for processors and ASICs. Its PowerPAK SO-8 thermal performance reduces the need for external heatsinking on dense 4-layer PCBs.
推薦
Battery Protection and Load Switching
The SI7460DP-T1-GE3 suits battery protection and load-switching roles in portable and industrial systems where the 60 V VDS handles multi-cell battery stacks and 24 V industrial rails. Its 9.6 mΩ RDS(on) minimizes voltage drop across the switch during high-current discharge, preserving battery runtime. The PowerPAK SO-8 1.07 mm profile keeps total solution height low in space-constrained packs and PMICs.
推薦
Motor Drive Low-Side Switch
The SI7460DP-T1-GE3 is used as a low-side switch in half-bridge motor drive stages below 60 V, where its 11 A rating covers small BLDC and brushed DC motors in industrial automation, robotics, and drone applications. Its TrenchFET technology provides fast turn-on/turn-off for PWM frequencies up to 100 kHz, while the PowerPAK SO-8 thermal pad routes heat directly into PCB copper for sustained operation. Designers pair it with a complementary high-side P-channel or N-channel driver.
推薦
Hot-Swap and Inrush Protection
The SI7460DP-T1-GE3's 60 V VDS and 9.6 mΩ RDS(on) make it a candidate for 24 V-48 V hot-swap controllers where the MOSFET must absorb inrush transients and sustained load current. Its PowerPAK SO-8 footprint supports 1 oz copper pour designs without an external heatsink up to several amps continuous. Designers should size copper area using the thermal resistance curves in the datasheet to maintain junction temperature below 150 °C.
推薦
LED Driver Power Stage
In high-current LED driver power stages, the SI7460DP-T1-GE3 is used as a switching element where its 9.6 mΩ RDS(on) reduces I²R loss in constant-current regulators driving high-brightness LED arrays. The 60 V VDS rating supports 48 V LED strings with margin, and the PowerPAK SO-8 thermal performance handles the steady-state dissipation of a multi-amp LED driver. The halogen-free -GE3 suffix is preferred for commercial and architectural lighting products sold into regions requiring IEC 61249-2-21 compliance.
推薦
推薦產品摘要
工程參考資料，適用於 SI7460DP-T1-GE3 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | SI7460DP-T1-E3 | SI7465DP-T1-GE3 | Si7434DP-T1-GE3 |
|---|---|---|---|---|
| Package | PowerPAK SO-8 | PowerPAK SO-8 - same | PowerPAK SO-8 - same | PowerPAK SO-8 - same |
| Brand | Vishay Intertechnology | Vishay Intertechnology | Vishay Intertechnology | Vishay Intertechnology |
| FET Type / Polarity | N-Channel | N-Channel | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 100 V | 30 V |
| Gate-Source Voltage (VGS) | ±20 V | ±20 V | ±20 V | ±20 V |
| Halogen-Free | Yes (IEC 61249-2-21) | No | Yes (IEC 61249-2-21) | Yes (IEC 61249-2-21) |
主要差異化特點
- Halogen-free compliance per IEC 61249-2-21 (對比SI7460DP-T1-E3)
- Optimized 60 V VDS for lowest RDS(on) in class (對比SI7465DP-T1-GE3)
- Direct SO-8 dual footprint compatibility (對比Standard SO-8 dual MOSFETs (non-PowerPAK))
設計說明
The PowerPAK SO-8 dissipates heat primarily through the bottom exposed pad into PCB copper. With a minimum 1 oz copper landing pad the device is rated at 1.9 W steady-state (TA=25 °C) per the datasheet, but increasing copper area to 1 square inch can raise steady-state dissipation capacity substantially. Always compute junction temperature using the thermal resistance curves in the datasheet for the actual copper geometry in your design.
Use a standard SO-8 dual land pattern with an enlarged drain pad under the PowerPAK SO-8 body to expose the bottom thermal pad. Vias in the drain pad (typically 6-10 thermal vias, 0.3 mm drill) significantly improve thermal transfer to inner copper planes. Place gate-drive components within 5 mm of pin 4 to minimize parasitic inductance and prevent gate ringing at high dV/dt.
Do not assume 9.6 mΩ RDS(on) is achievable at VGS=4.5 V; the datasheet's VGS=4.5 V curve shows a higher RDS(on) value. Drive the gate with a 10 V gate-drive stage whenever possible to minimize conduction loss. Also note that the SI7460DP and SI7465DP differ in VDS rating (60 V vs 100 V) — substituting the SI7465DP for transient margin is acceptable, but never substitute the lower-voltage part into a >60 V design.
合規資訊
Halogen-free per IEC 61249-2-21 (suffix GE3). Lead-free per Vishay ordering information. Not AEC-Q100 qualified; for automotive applications consult Vishay's automotive-grade MOSFET portfolio.
