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STP85NF55 - 85A, 55V N-Channel Power MOSFET | STMicroelectronics
The STP85NF55 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-to-source voltage (VDS) of 55V and a continuous drain current (ID) of 85A at 25°C, making it suitable for power management, motor control, and DC-DC conversion. The device is housed in a TO-220 package, which provides excellent thermal performance for high-power dissipation. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power management ICs, motor drivers, and switching regulators, where they handle high voltages and currents with low on-resistance and fast switching speeds. Key features of the STP85NF55 include a low on-resistance (RDS(on)) of [DATA_NEEDED: RDS(on) value] at VGS=10V, which minimizes conduction losses, and a fast switching speed that reduces switching losses in high-frequency applications. The device also offers a wide operating temperature range of -55°C to +175°C, ensuring reliability in harsh environments. The TO-220 package allows for easy mounting on heatsinks, enabling efficient thermal management. The STP85NF55 utilizes STMicroelectronics' advanced PowerMESH™ technology, which provides a robust and reliable structure for high-current handling. The device features a low gate charge (Qg) of [DATA_NEEDED: Qg value], which reduces the drive requirements and improves efficiency in high-frequency switching circuits. The built-in diode offers fast reverse recovery, making it suitable for applications requiring freewheeling diodes. Typical applications include switch-mode power supplies (SMPS), DC-DC converters, motor control circuits, and automotive systems. The high current rating and low on-resistance make it ideal for battery management systems and power distribution. In motor control, the fast switching speed ensures precise control of motor speed and torque. When designing with this device, ensure adequate gate drive voltage (typically 10V) to achieve the lowest on-resistance. The TO-220 package requires proper heatsinking to manage power dissipation, especially at high currents. Consider the thermal resistance (RthJA) of [DATA_NEEDED: RthJA value] to calculate the junction temperature under load.
STP8N60M2 - 600V 8A N-Channel Power MOSFET | STMicroelectronics
The STP8N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 8A at 25°C, with a low on-resistance of 0.55Ω (typical) and a gate charge of 16nC. The device is housed in a TO-220 package, providing excellent thermal performance for through-hole mounting. A power MOSFET is a type of field-effect transistor designed to handle significant power levels, typically used as a switch in power electronics. It operates by controlling the voltage on the gate terminal to modulate the conductivity between the drain and source. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they enable efficient switching at high frequencies. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STP8N60M2 include a very low gate charge (16nC) for reduced switching losses, a high dv/dt capability for ruggedness, and 100% avalanche tested for reliability. The device also offers a wide operating temperature range from -55°C to +150°C, making it suitable for demanding industrial environments. The TO-220 package provides a low thermal resistance of 62.5°C/W (junction-to-ambient), allowing efficient heat dissipation with proper heatsinking. The MDmesh M2 technology combines a vertical structure with a deep trench gate, resulting in a significant reduction in on-resistance and gate charge compared to conventional planar MOSFETs. This technology enables higher efficiency and lower switching losses, particularly in high-frequency applications. The device's fast body diode and low reverse recovery charge (Qrr) further enhance performance in bridge topologies. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control. In an SMPS, the STP8N60M2 can be used as the main switching element in a flyback or forward converter, where its low RDS(on) minimizes conduction losses and its fast switching reduces transition losses. For PFC, the device's high voltage rating and low gate charge enable efficient boost converters operating at high frequencies. When designing with this device, ensure adequate gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor in the range of 10-100Ω is recommended to control switching speed and reduce EMI. Proper PCB layout with short, wide traces for high-current paths and a low-inductance gate loop is essential for reliable operation.
STPS20120CR - 120V 2x10A Schottky Rectifier | STMicroelectronics
The STMicroelectronics STPS20120CR is a dual (1 pair) common-cathode power Schottky rectifier rated 120 V repetitive reverse voltage (VRRM) and 2 x 10 A average forward current, housed in a through-hole TO-262-3 long-leads (I2PAK, TO-262AA) package. According to the STMicroelectronics datasheet, it is avalanche-rated and supports a high maximum junction temperature with low leakage current. A power Schottky rectifier is a semiconductor diode that uses a metal-semiconductor junction instead of a P-N junction, giving a lower forward voltage drop and essentially zero reverse-recovery charge. Within the power-conversion hierarchy it belongs to the rectifier diode family, a subset of discrete power semiconductors used in power management stages to convert AC to DC or to steer current in switching converters. Key features of the STPS20120CR include the 120 V blocking rating, which covers off-line and 48 V-class power buses; the dual common-cathode configuration, which allows two anodes to share one cathode tab for full-wave or ORing topologies; avalanche energy capability for robustness against leakage-inductance spikes; and a good trade-off between leakage current and forward voltage drop as stated in the ST datasheet. Technically, the two Schottky dies are mounted on the tab which forms the common cathode, giving excellent thermal coupling to the heatsink through the TO-262/TO-262AA flange. The absence of reverse recovery makes switching losses negligible at frequencies typical of SMPS secondary rectification, while conduction loss is set by the typical forward voltage of the Schottky barrier. Typical applications include secondary-side rectification in switch-mode power supplies, DC-DC converter output stages, reverse-polarity and ORing protection, and freewheeling or clamping functions in motor-drive and inverter circuits. A key design consideration is thermal management: at 10 A per leg the dissipation equals VF x IF(AV), so a properly sized heatsink and thermal interface are required to keep the junction within its rated maximum temperature. This page adds value beyond the manufacturer datasheet by synthesizing distributor availability, drop-in alternative analysis, comparison tables, and practical design notes in one place.
STPSC10H065DLF - 650V 10A SiC Schottky Diode | STMicroelectronics
The STMicroelectronics STPSC10H065DLF is a 650 V, 10 A power Schottky silicon carbide (SiC) diode housed in a low-profile PowerFLAT 8x8 HV surface-mount package. Manufactured on a silicon carbide substrate, this wide-bandgap rectifier delivers essentially zero reverse recovery at turn-off, with negligible ringing and a minimal capacitive turn-off behavior that is independent of temperature. A Schottky diode is a metal-semiconductor junction rectifier that conducts using majority carriers rather than minority-carrier diffusion, which eliminates the reverse recovery charge stored in a conventional P-N diode. In the power-semiconductor hierarchy, this SiC Schottky rectifier sits within the rectifier diode family of discrete power devices, serving as the freewheeling or output rectification element in power conversion stages. Silicon carbide's roughly 3x wider bandgap versus silicon permits thin blocking layers rated at 650 V while retaining Schottky-like switching behavior. Key differentiating features include the 650 V repetitive reverse voltage class, a 10 A continuous forward current rating suited to several-hundred-watt converters, and high surge current capability paired with a low forward voltage drop in a compact 8x8 mm footprint. Because turn-off loss is purely capacitive and temperature-independent, switching losses remain flat across the full operating temperature range, simplifying thermal design and enabling higher switching frequencies than silicon fast-recovery diodes. Technically, the absence of reverse recovery (trr) removes the dominant turn-on loss mechanism of the accompanying MOSFET or IGBT in hard-switched topologies. Negligible ringing reduces EMI filter burden, and the low-profile PowerFLAT 8x8 HV package minimizes parasitic inductance for fast-switching loops while mounting flush on the PCB for thermal dissipation through the exposed pad. Typical applications span telecom and network rectifier front ends, industrial power supplies such as server and welding power stages, and renewable energy converters including solar micro-inverters and boost stages of photovoltaic systems, where 400 V-class DC buses demand a 650 V rectifier. Design consideration: the capacitive charge stored at turn-off is discharged into the switching device, so verify total switching loss at the intended frequency; also follow the datasheet layout guidance for exposed-pad copper area to keep junction temperature within rating. This page synthesizes distributor pricing, verified datasheet highlights, application guidance, and design notes not consolidated in the manufacturer datasheet alone.
STQ1NC45R-AP - 450V N-Channel SuperMESH MOSFET | STMicroelectronics
The STMicroelectronics STQ1NC45R-AP is an N-channel 450V Power MOSFET in a TO-92 (Ammo Pack) package built on ST's proprietary SuperMESH strip-based process. It delivers a typical on-resistance of 4.1 ohm at VGS=10V with a continuous drain current rating of 500 mA (Tc) and 1.5 A peak capability, and a maximum power dissipation of 3.1 W (Tc). The TO-92 through-hole package supports conventional hand-soldered and wave-soldered PCB assembly, making it well suited for low-power offline and high-voltage auxiliary switching. What is a high-voltage MOSFET? An N-channel power MOSFET is a voltage-controlled majority-via device that conducts current between drain and source when a sufficient gate-source voltage is applied. Power MOSFETs in the 400-500V class are designed for offline switching converters, where they sit inside the switch-mode power supply (SMPS) power train: AC mains -> bridge rectifier -> bulk capacitor -> high-voltage MOSFET switch -> transformer -> output rectifier -> load. Within that hierarchy, the high-voltage MOSFET is the primary energy-translation element that converts rectified mains DC into a switched waveform the transformer can step down. STMicroelectronics positions the SuperMESH family at the entry of this stack, above general-purpose small-signal MOSFETs and below their MDmesh and silicon-carbide lines. Key features of the STQ1NC45R-AP include an extremely high dv/dt capability for demanding inductive loads, a 100% avalanche-tested rating for reliability under transient over-voltage, minimized gate charge to reduce drive losses, and a low typical Rds(on) of 4.1 ohm. The TO-92 (Ammo Pack) suffix designates radial-leaded through-hole packaging on tape-and-reel for automated insertion. Typical applications are AC-DC flyback converters in sub-10W adapters, linear-mode ballasts, low-power SMPS auxiliary supplies, electronic ballasts for compact fluorescent and LED drivers, and high-voltage driver interfaces. The 450V drain-source voltage provides ample derating margin for 220-240V rectified mains (peak ~373V). Design consideration: when used as the primary switch in a flyback converter, the avalanche rating and dv/dt tolerance allow the designer to omit an external snubber in many low-power configurations. However, ensure the gate drive swing reaches 10V for full enhancement - logic-level (5V) drive is not guaranteed across all units. This page synthesizes distributor pricing, drop-in TO-92 alternatives, application circuit roles, and practical design notes not found in the manufacturer datasheet alone.
STS232240B151 - 24V TVS ESD Array, SOT-23 | Eaton
The Eaton STS232240B151 is a TVS diode array ESD suppressor rated for 24V working voltage, packaged in a 3-pin SOT-23 (surface mount, gull-wing) outline and qualified for -40C to +125C operation. It delivers 60V clamping voltage at 6A (8/20 us) peak pulse current, with 15 pF typical channel capacitance for high-speed signal line protection. A TVS (Transient Voltage Suppressor) diode array is a discrete semiconductor protection device that clamps transient over-voltages to a safe level by avalanching through a reverse-biased PN junction. TVS arrays belong to the broader hierarchy of discrete semiconductors, sitting below circuit-protection components like varistors and PTC fuses but above signal-level Zener clamps in peak-current handling, made for sub-nanosecond response and tens-of-amperes pulse ratings. Key features of the STS232240B151 include: bidirectional single-channel protection (one protected line), 24V reverse working voltage (VRWM), 60V maximum clamping voltage (VC) at the 8/20 us test waveform, 15 pF typical capacitance to preserve signal edges on RS-485 / RS-232 buses, and a compact SOT-23-3 footprint that drops onto generic TSMC/IEC 61340-3-1 ESD layouts. The 8/20 us waveform is the industry-standard short-pulse test defined by the IEC 61000-4-5 surge immunity standard, with peak current 6A ensuring robust surge handling on industrial signal lines. Typical applications include RS-485 transceiver protection on factory-floor nodes, set-top box and notebook data-line protection, portable electronics with exposed I/O, and control/monitoring systems. The 24V working voltage and 60V clamp voltage bracket the 24 V industrial bus common-mode range, protecting downstream transceivers without disturbing normal signal swing. Designers should place the STS232240B151 within 5 mm of the connector pin to minimize parasitic inductance to the protected IC, and route the ground return directly to the chassis or system ground. The bidirectional construction means it protects against both positive and negative transients without polarity orientation during placement. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Eaton datasheet alone, including the parametric comparison vs competing SOT-23-3 TVS diodes and the recommended layout rules for IEC 61000-4-2 air-discharge compliance.
STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST
The STMicroelectronics STS4DNF60L is a dual N-channel 60 V, 4 A, 0.045 Ω STripFET Power MOSFET in an SO-8 surface-mount package, with two MOSFETs integrated on one die for compact switching applications. Built on STMicroelectronics' second-generation "Single Feature Size" strip-based process, the part delivers extremely high packing density, rugged avalanche characteristics, and a low typical on-resistance of 0.045 Ω per channel. The dual-channel integration reduces board area by approximately 50% versus two discrete SO-8 MOSFETs in synchronous-rectifier and load-switching topologies. Background Knowledge: A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify signals in power-conversion circuits. The N-channel variant requires the gate to be driven positive relative to the source to turn on. A dual (half-bridge or dual-N) MOSFET array combines two N-channel devices on a single die and is most often deployed as a low-side and high-side pair in synchronous buck converters, motor half-bridges, or as two independent load switches. The STripFET family specifically targets low gate charge and low on-resistance per unit area, optimizing conduction loss and switching speed for switch-mode power supplies (SMPS) operating in the 100 kHz to 1 MHz range. Key features of the STS4DNF60L include a typical R_DS(on) of 0.045 Ω at V_GS = 10 V, a continuous drain current of 4 A per channel, low threshold drive (logic-level-compatible enhancement mode), standard SO-8 outline for automated surface-mount assembly, and avalanche-rated switching robustness. The dual-die construction halves the PCB footprint versus two discrete equivalents, while the STripFET process minimizes reverse-recovery charge (Q_rr) for efficient synchronous rectification. Architecturally, the device uses STMicroelectronics' STripFET process which combines a fine-pitch strip cell layout with a low-resistance substrate to balance on-resistance, gate charge, and ruggedness. The resulting transistor exhibits excellent manufacturing reproducibility and is well suited to high-frequency DC-DC converter stages, where low Q_g and low Q_rr reduce switching loss and diode losses respectively. Typical applications for the STS4DNF60L include synchronous buck converters in low-voltage DC-DC regulators, battery protection and load management circuits, DC motor control in consumer appliances and small industrial drives, USB Type-C VBUS power switching, and small Uninterruptible Power Supplies (UPS) or solar microinverter auxiliary rails. When designing with this part, ensure that the gate-drive voltage reaches at least 4.5 V for full enhancement (R_DS(on) is specified at V_GS = 10 V). Use a gate resistor (typically 10 Ω to 100 Ω) to control ringing and dv/dt, and keep the high-di/dt loop (drain-to-source of each channel plus its bypass capacitor) physically short to limit voltage overshoot and EMI. This page synthesizes distributor pricing, drop-in alternatives, comparison parameters, and practical PCB/design notes that go beyond the manufacturer datasheet, helping engineers select and source the STS4DNF60L with confidence.
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
The STMicroelectronics STS5DNF60L is an automotive-grade dual N-channel 60 V, 35 mΩ typical on-resistance, 5 A STripFET II Power MOSFET housed in an SO-8 surface-mount package. It integrates two independent N-channel MOSFETs in a single 8-pin SOIC outline, making it well suited for half-bridge, full-bridge, and synchronous-rectifier topologies where PCB real estate is constrained. The device is specified for 60 V drain-to-source breakdown, 5 A continuous drain current per channel at 25 °C, and a typical R_DS(on) of 35 mΩ at V_GS = 10 V. A power MOSFET is a voltage-controlled semiconductor switch that uses a gate field to modulate current flow between drain and source terminals. The STripFET II process employed in the STS5DNF60L is specifically engineered to minimize input capacitance and gate charge, which sit inside the broader technology hierarchy of trench MOSFET -> power MOSFET -> discrete semiconductor -> active electronic component. Low Q_g directly reduces driver losses in high-frequency switching applications and enables operation from low-current logic-level gate drivers. Key features include 60 V V_DSS rating, 5 A continuous drain current per channel, 35 mΩ typical R_DS(on) at V_GS = 10 V, low threshold voltage compatible with 3.3 V / 5 V gate drive, low gate charge for fast switching edges, and 100 % avalanche-tested internal construction. The SO-8 footprint provides a standardized land pattern that simplifies automated SMT assembly and supports dual-sided cooling through copper-pour design. From an architecture standpoint, the dual-die monolithic integration shares a common substrate while keeping source pins electrically isolated, so each transistor can be driven independently in any switching configuration. The STripFET II cell geometry lowers conduction losses versus earlier STripFET generations, improving efficiency in DC-DC converter primary-side switches and secondary-side synchronous rectifiers. Typical turn-on delay times are in the tens of nanoseconds, enabling use at switching frequencies from 100 kHz up to several hundred kHz. Typical applications include isolated DC-DC converter primary switches for telecom and computer power supplies, secondary-side synchronous rectification in buck converters, motor-driver half-bridges for low-power BLDC drivers, and automotive 12 V/24 V load switches. The 60 V rating provides ample headroom above 24 V industrial bus rails and 12 V automotive transient excursions. When designing with this part, ensure that gate-drive voltage remains at or above 4.5 V for full enhancement at low temperatures, place the gate-drive resistor within 5 mm of the gate pin to suppress ringing, and keep high-dV/dt loops compact to limit EMI. A low-ESR ceramic bypass of at least 10 µF should sit adjacent to each drain pin for hard-switched topologies. This page synthesizes real distributor stock data, parametric comparison versus alternates, and practical PCB-layout guidance that goes beyond what the manufacturer datasheet alone provides.
STS7DNH3LL - Dual N-Channel 30V MOSFET, 0.018Ω, 7A | STMicroelectronics
The STMicroelectronics STS7DNH3LL is a dual N-channel 30 V STripFET III Power MOSFET array housed in an SO-8 surface-mount package, with a typical on-resistance of 0.018 Ω and per-channel continuous drain current rated up to 7 A. The device integrates two low-RDS(on) N-channel FETs in a single 8-pin SOIC, designed for high-efficiency synchronous rectification and load switching in compact power designs. Its 30 V drain-to-source breakdown and 0.018 Ω RDS(on) at 10 V VGS make it well suited to synchronous buck converters, low-voltage motor drives, and battery protection circuits. A Power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source, enabling high-efficiency power conversion at switching frequencies that mechanical or bipolar devices cannot achieve. Within the broader semiconductor taxonomy, a Power MOSFET belongs to the discrete transistor family (transistor -> discrete semiconductor -> semiconductor), with the sub-class of enhancement-mode N-channel devices dominating low-voltage synchronous-rectifier designs because N-channel carriers exhibit roughly three times higher mobility than P-channel carriers, lowering conduction loss for a given silicon area. Key features of the STS7DNH3LL include 0.018 Ω typical on-resistance at VGS = 10 V, 30 V VDS max rating, ±20 V VGS rating, low gate charge optimized for STripFET III generation, and an integrated dual-FET topology that halves board area versus two discrete DPAK devices. The SO-8 package supports a maximum power dissipation of approximately 2.5 W per channel with proper copper thermal management, and the device is rated for operation across -55°C to +175°C junction temperature for harsh-environment industrial loads. Architecturally, the STS7DNH3LL uses STMicroelectronics' third-generation STripFET III trench-gate process, which reduces the figure-of-merit RDS(on) × Qg compared to earlier planar generations. This directly translates into lower switching and conduction losses in high-frequency buck and synchronous-rectifier applications. The integrated monolithic dual-die construction also reduces parasitic source inductance relative to discrete pairs, which improves switching performance and reduces ringing on the gate drive waveform. Typical applications include synchronous rectification in 12 V buck converters for telecom and server point-of-load rails, low-voltage DC motor control in robotics and drones, OR-ing and hot-swap circuits on multi-rail backplanes, and high-efficiency battery management in portable electronics and e-bike motor controllers. The dual-FET topology is particularly valuable where PCB real estate is at a premium. When designing with this device, place the gate-drive return paths directly over the source pad to minimize parasitic inductance, and ensure the gate drive voltage is sequenced properly to prevent simultaneous turn-on of both channels. The SO-8 thermal pad is the drain terminal for both FETs, so the PCB copper pour doubles as both a thermal dissipation path and a low-impedance drain connection.
STTH102AY - 1A 200V Ultrafast Rectifier | STMicroelectronics | SMA
The STTH102AY is an ultrafast high-voltage rectifier diode from STMicroelectronics, designed for high-frequency power conversion applications. It delivers a forward current of 1A with a repetitive peak reverse voltage of 200V, housed in a compact SMA (DO-214AC) surface-mount package. The device features an ultrafast reverse recovery time of 25 ns, making it ideal for switching power supplies, freewheeling diodes, and snubber circuits. A rectifier diode is a semiconductor device that allows current to flow in only one direction, converting alternating current (AC) to direct current (DC). Ultrafast rectifiers are a subclass of power diodes optimized for high-speed switching, with reverse recovery times typically below 50 ns. They are essential in switch-mode power supplies (SMPS) and DC-DC converters where efficiency and reduced switching losses are critical. The STTH102AY belongs to the STTH family of ultrafast diodes, which are known for their low forward voltage drop and fast recovery characteristics. Key features of the STTH102AY include a low forward voltage drop of 0.85V at 1A, a maximum junction temperature of 175°C, and a repetitive peak reverse voltage of 200V. The device also offers a non-repetitive peak forward surge current of 30A, ensuring robustness during transient conditions. Its SMA package provides excellent thermal performance with a thermal resistance of 15°C/W, enabling efficient heat dissipation in compact designs. The STTH102AY utilizes planar technology, which ensures stable and reliable performance across its operating range. The ultrafast recovery time minimizes reverse recovery losses, improving overall system efficiency in high-frequency circuits. The device is AEC-Q101 qualified, making it suitable for automotive applications where reliability under harsh conditions is paramount. Typical applications include switch-mode power supplies, freewheeling diodes in inductive loads, snubber circuits, and output rectification in DC-DC converters. Its fast recovery and low forward voltage make it particularly effective in power factor correction (PFC) circuits and LED lighting drivers. When designing with the STTH102AY, ensure adequate PCB copper area for thermal management, especially at high forward currents. The device's fast recovery characteristics require careful layout to minimize parasitic inductance, which can cause voltage spikes during switching transitions.
STTH8L06G-TR - 600V 8A Turbo 2 Ultrafast Rectifier | STMicroelectronics
The STMicroelectronics STTH8L06G-TR is a Turbo 2 ultrafast high-voltage rectifier rated at 600 V repetitive peak reverse voltage (VRRM) and 8 A average forward current (IF(AV)), housed in a surface-mount D2PAK (TO-263) package with tape-and-reel packaging (TR suffix). The device is built on ST's proprietary Turbo 2 600 V planar technology and is specifically optimized for use as a boost diode in discontinuous-mode or critical-mode power factor correction (PFC) stages. A rectifier diode is a two-terminal semiconductor device that allows current to flow in only one direction, converting alternating current (AC) to direct current (DC). Ultrafast rectifiers, like the STTH8L06, feature very short reverse recovery times (trr) that minimize switching losses in high-frequency power conversion. The Turbo 2 family represents ST's second-generation ultrafast rectifier platform, positioned within the broader discrete-semiconductor taxonomy as: ultrafast rectifier -> rectifier diode -> power diode -> discrete semiconductor. The D2PAK package inherits from the TO-220 through-hole family, offering equivalent thermal performance in a surface-mount format that enables automated PCB assembly. Key specifications include a maximum reverse recovery time of 105 ns (per DigChip datasheet excerpt), low reverse recovery current, and low thermal resistance for reduced switching and conduction losses. The device offers high insulation voltage rating and is qualified to industrial and consumer-grade reliability standards. With a peak forward surge current capability and operating junction temperature up to 175 °C, the STTH8L06G-TR delivers robust performance in demanding switching power supply environments. Architecturally, the Turbo 2 process uses a platinum-doped lifetime control that achieves the ultrafast trr without the excessive forward voltage penalty seen in older ultrafast rectifiers. This trade-off between VF and trr is critical: lower trr means less switching loss in hard-switched PFC stages, while reasonable VF keeps conduction loss manageable. The combination makes the part particularly attractive in 100W to 1kW PFC stages where hard switching dominates the loss budget. Typical applications include boost diode in CCM and critical-mode PFC front ends for switch-mode power supplies, freewheeling diode in DC-DC converters, output rectification in high-frequency SMPS, and snubber/commutation applications in motor drives. The D2PAK package suits both hand-soldered prototyping and high-volume surface-mount manufacturing. The STTH8L06 family also includes TO-220AC and TO-220FPAC variants (insulation voltage 2000 VDC) for through-hole designs requiring higher isolation. When designing with this part, ensure the junction temperature stays within SOA limits by calculating power dissipation (P = VF × IF(AV) + switching losses). Provide adequate copper area on the D2PAK PCB pad — typically 1 square inch or more — to act as the heatsink. Pay attention to the snappiness factor (S = trr/tb) to evaluate EMI behavior in PFC circuits.
STU16N65M5 - 650V N-Channel Power MOSFET | STMicroelectronics
The STU16N65M5 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M5 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 16A at 25°C, with a low on-resistance of 0.29 ohm (typical) to minimize conduction losses. The device is housed in an IPAK (TO-251) package, which offers a compact footprint with a metal tab for thermal dissipation, suitable for through-hole mounting in power supplies and industrial equipment. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and lighting systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each tailored for specific power handling and switching requirements. Key features of the STU16N65M5 include a very low gate charge (Qg) of 38 nC (typical), which enables fast switching and reduces driver losses, and a high dv/dt capability for robust performance in hard-switching topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its avalanche ruggedness is rated at 400 mJ (single pulse), making it suitable for applications where inductive loads may cause voltage spikes. Technically, the MDmesh M5 series utilizes a proprietary strip layout technology that reduces on-resistance and gate charge simultaneously, achieving a figure of merit (RDS(on) x Qg) that is among the best in its class. This technology enhances the device's efficiency in high-frequency switching applications, where both conduction and switching losses are critical. The STU16N65M5 also features a built-in diode with fast recovery characteristics, reducing reverse recovery losses in bridge topologies. Typical applications include switch-mode power supplies (SMPS) for consumer and industrial electronics, power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. Its 650V rating provides ample margin for universal input (85-265V AC) power supplies, while the low on-resistance ensures high efficiency in continuous conduction mode. When designing with the STU16N65M5, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Thermal management is crucial: the IPAK package's tab should be soldered to a sufficient copper area or heatsink to dissipate heat, especially at high currents. Always consider the device's SOA (Safe Operating Area) and avalanche ratings when designing for inductive loads.
STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics
The STW11NK90Z is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage switching applications. It features a drain-source voltage (VDS) of 900V, a continuous drain current (ID) of 9.5A at 25°C, and a low on-resistance (RDS(on)) of 0.85 ohm. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A Power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STW11NK90Z include a high voltage rating of 900V, making it suitable for applications such as switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-voltage DC-DC converters. The low on-resistance minimizes conduction losses, improving overall efficiency. The device also features a fast switching speed, which is critical for reducing switching losses in high-frequency applications. The STW11NK90Z utilizes STMicroelectronics' advanced PowerMESH technology, which provides a robust and reliable structure. The device has a maximum junction temperature of 150°C and is available in a TO-247 package, which offers a low thermal resistance of 0.5°C/W, enabling efficient heat dissipation. The device is RoHS compliant and lead-free, meeting environmental standards. Typical applications include high-voltage power supplies, industrial motor drives, and renewable energy inverters. The device's high voltage rating and low on-resistance make it ideal for these applications, where efficiency and reliability are paramount. When designing with the STW11NK90Z, it is important to consider the gate drive requirements. The device has a gate threshold voltage of 3V to 5V, and a gate charge of 45nC, which should be considered when designing the gate drive circuit. Additionally, proper heat sinking is essential to maintain the junction temperature within safe limits.
STW12N60M2 - 600V 12A N-Channel MDmesh M2 MOSFET | STMicroelectronics
The STW12N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 12A at 25°C, with a low on-resistance of 0.38 ohm (typical) and a fast body diode. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, motor drives, and inverters, where they handle high voltages and currents with minimal conduction and switching losses. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speed and low drive power. Key features of the STW12N60M2 include a low gate charge (Qg) of 30 nC (typical), which reduces switching losses and enables high-frequency operation. The device also offers a high dv/dt capability and is avalanche-rated, ensuring robustness in harsh environments. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), making it suitable for applications where efficiency is critical. The STW12N60M2 utilizes STMicroelectronics' MDmesh M2 vertical structure, which combines a low on-resistance with a fast intrinsic diode. This technology reduces conduction and switching losses, improving overall system efficiency. The device is fully isolated and RoHS compliant, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. The high voltage rating and low on-resistance make it ideal for 600V-class power conversion systems. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking is required for high-current operation, as power dissipation can be significant.
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
The STW12NK95Z is an N-channel Power MOSFET from STMicroelectronics, featuring a 950V drain-source breakdown voltage and a continuous drain current of 10A at case temperature (Tc). It is housed in a TO-247-3 through-hole package, designed for high-voltage power switching applications. The device offers a typical on-resistance of 0.69 ohm (maximum 0.90 ohm) and a power dissipation of 230W at Tc, making it suitable for demanding power conversion circuits. A Power MOSFET is a type of field-effect transistor optimized for high power and high voltage switching. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, inverters, and motor drives. They belong to the broader discrete semiconductor family, alongside diodes, IGBTs, and thyristors. Key features include Zener protection, which safeguards the gate oxide from overvoltage transients, and minimized gate charge for faster switching and reduced drive losses. The device is 100% avalanche tested, ensuring ruggedness under inductive load conditions, and offers extremely high dv/dt capability for reliable fast-switching operation. The SuperMESH technology, an evolution of ST's strip-based PowerMESH layout, significantly reduces on-resistance while maintaining high breakdown voltage. This results in lower conduction losses and improved efficiency, while minimized gate charge enables higher frequency operation and smaller magnetic components. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, high-voltage DC-DC converters, and lighting systems where efficiency and reliability are critical. When designing with this device, ensure a proper gate drive voltage (typically 10V) to fully enhance the channel and minimize conduction losses, and provide adequate heatsinking since the device can dissipate up to 230W at maintained case temperature.
STW18N60M2 - 650V 18A N-Channel Power MOSFET | STMicroelectronics
The STW18N60M2 is an N-channel Power MOSFET manufactured by STMicroelectronics, featuring a breakdown voltage of 650V and a continuous drain current of 18A at 25°C. It is housed in a TO-247 package, which is a through-hole package suitable for high-power applications. This device is part of the MDmesh M2 series, which utilizes ST's advanced strip layout technology to achieve low on-resistance and reduced switching losses. A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification applications. It operates by controlling the flow of current through a semiconductor channel using an electric field, and it is widely used in power electronics for its high switching speed and efficiency. Power MOSFETs are a subset of discrete semiconductors, which are fundamental building blocks in power management and conversion systems. Key features of the STW18N60M2 include a low typical on-resistance of 0.19 ohm (at VGS=10V, ID=9A), a high avalanche ruggedness with an energy rating of 700 mJ, and a fast body diode with low reverse recovery charge. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. The TO-247 package provides excellent thermal performance with a junction-to-case thermal resistance of 0.6°C/W, enabling efficient heat dissipation. The STW18N60M2 is built using ST's MDmesh M2 technology, which combines a vertical structure with a strip layout to minimize on-resistance and gate charge. This results in improved figure of merit (FOM) compared to previous generations, leading to higher efficiency in power conversion circuits. The device is designed for hard-switching topologies and offers a low gate charge of 45 nC, reducing driver requirements and switching losses. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-frequency DC-DC converters. In an SMPS, the STW18N60M2 can be used as the main switching element in the primary side, handling high voltage and current with minimal losses. Its low on-resistance ensures high efficiency, while its fast switching characteristics reduce electromagnetic interference (EMI). When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The device is not internally protected against overcurrent, so external current sensing and protection circuitry are recommended. Additionally, a proper snubber circuit may be required to manage voltage spikes during switching transitions.
STW20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
The STW20N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 20A at 25°C, with a low on-resistance of 0.19 ohm typical. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and inverters. They are preferred for their fast switching speeds, high input impedance, and low drive power requirements compared to bipolar junction transistors. Key features of the STW20N60M2 include a low gate charge (Qg) of 45 nC, which reduces switching losses and enables high-frequency operation. The device also offers a fast body diode with low reverse recovery charge, making it suitable for bridge topologies. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), balancing conduction and switching losses for optimal efficiency. The STW20N60M2 utilizes a vertical DMOS structure with a striped layout, optimizing current distribution and thermal performance. The TO-247 package offers a low thermal resistance of 0.5°C/W (junction-to-case), allowing efficient heat dissipation. The device is avalanche-rated, with an avalanche energy of 1.2 J, ensuring robustness in inductive load switching. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor drives. The high voltage rating and low on-resistance make it ideal for 400V bus systems and 3-phase rectification. In PFC boost converters, the low gate charge enables high switching frequencies, reducing magnetic component size. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to achieve low RDS(on). A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking is essential for continuous operation at high currents, as power dissipation can exceed 100W in worst-case conditions.
STW26N60M2 - 600V 26A N-Channel Power MOSFET | STMicroelectronics
The STW26N60M2 is an N-channel Power MOSFET manufactured by STMicroelectronics, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 26A at 25°C, making it suitable for a wide range of industrial and consumer power systems. The device is housed in a TO-247 package, which provides excellent thermal performance and is widely used in power electronics. A Power MOSFET is a type of field-effect transistor specifically designed to handle high voltages and currents in switching and amplification applications. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low on-resistance compared to bipolar transistors. Power MOSFETs are essential components in power management systems, where they function as switches in DC-DC converters, motor drives, and power supplies, enabling efficient energy conversion and regulation. Key features of the STW26N60M2 include a low on-resistance (RDS(on)) of typically 0.125 ohm at VGS=10V, which minimizes conduction losses and improves overall efficiency. The device also offers a fast switching performance with a total gate charge (Qg) of 78 nC, reducing switching losses in high-frequency applications. Additionally, it has a wide operating temperature range from -55°C to +150°C, ensuring reliability in harsh environments. The TO-247 package provides a low thermal resistance of 0.5°C/W (junction-to-case), enabling efficient heat dissipation. The STW26N60M2 utilizes STMicroelectronics' MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve a good trade-off between on-resistance and switching performance. This technology enhances the device's robustness against avalanche breakdown and improves its body diode characteristics, making it suitable for bridge topologies and inductive load switching. The device also features a built-in gate-source ESD protection, enhancing its durability during handling and operation. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, motor control, and uninterruptible power supplies (UPS). In these applications, the STW26N60M2 provides efficient switching and low conduction losses, contributing to higher system efficiency and reduced heat generation. Its high voltage rating and current capability make it ideal for 400V and 600V bus systems commonly found in industrial and telecom power supplies. When designing with this device, ensure proper gate driving to minimize switching losses and avoid parasitic turn-on. A gate resistor in the range of 10-100 ohm is recommended to control the switching speed and reduce EMI. Additionally, adequate heat sinking is required to maintain the junction temperature within safe limits, especially when operating at high currents and ambient temperatures.
STW30N60M2 - 600V 30A N-Channel Power MOSFET | STMicroelectronics
The STW30N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 30A at 25°C, with a low on-resistance of 0.098 ohm (typical) and a fast body diode. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification circuits. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering high switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of switch-mode power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STW30N60M2 include a low gate charge (Qg) of 60 nC (typical), which reduces switching losses and enables high-frequency operation. The device also offers a wide safe operating area (SOA) and is avalanche-rated, ensuring robustness in harsh environments. The TO-247 package has a thermal resistance of 0.5°C/W (junction-to-case), allowing efficient heat dissipation when mounted on a suitable heatsink. The STW30N60M2 utilizes STMicroelectronics' MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and reduced capacitance. This results in improved figure of merit (FOM) compared to previous generations, making it suitable for high-efficiency designs. The device also features a fast intrinsic body diode with low reverse recovery charge, which is critical for bridge topologies where diode recovery losses can dominate. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor drives. In an SMPS, the STW30N60M2 can be used as the main switching element in a flyback or forward converter, where its low RDS(on) minimizes conduction losses and its fast switching reduces transition losses. For PFC, the device's high voltage rating and low gate charge enable efficient boost converters operating at high frequencies. When designing with the STW30N60M2, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. The device is not internally protected against overcurrent, so an external current-sense resistor or fuse is recommended. Additionally, a gate resistor (e.g., 10 ohm) may be used to dampen ringing caused by parasitic inductance and capacitance.
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
The STW45NM50 is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power conversion applications. It features a drain-source voltage (VDS) of 500V, a continuous drain current (ID) of 45A at 25°C, and a low on-resistance (RDS(on)) of 0.09 ohm. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of power management systems, motor drives, and switch-mode power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STW45NM50 include a low gate charge (Qg) of 120 nC, which enables fast switching and reduced driver requirements. The device also features a high avalanche ruggedness, with an avalanche energy rating of 1.2 J, making it suitable for applications where inductive loads are present. The TO-247 package offers a low thermal resistance of 0.5°C/W, allowing efficient heat dissipation in high-power designs. The STW45NM50 utilizes ST's proprietary MDmesh technology, which reduces on-resistance and gate charge compared to conventional MOSFETs. This technology enhances the device's efficiency and switching performance, making it ideal for high-frequency power conversion circuits. The device also includes an integrated body diode with fast recovery characteristics, reducing switching losses in bridge topologies. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, motor drives, and uninterruptible power supplies (UPS). The high voltage rating and low on-resistance make it suitable for 400V and 500V bus systems commonly found in industrial and telecom equipment. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize conduction losses. The device is RoHS compliant and halogen-free, meeting modern environmental standards. For automotive applications, consider the AEC-Q101 qualified variants if available.
STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics
The STMicroelectronics STW45NM60 is an N-channel 600 V, 45 A MDmesh Power MOSFET housed in a TO-247-3 through-hole package, designed using STMicroelectronics' proprietary MDmesh technology that combines a multiple-drain process with the company's PowerMESH horizontal layout. The device features a typical on-resistance of 90 mΩ at 10 V gate drive and 110 mΩ at 4.5 V, with a maximum continuous drain current of 45 A at Tc and a power dissipation rating of 417 W at Tc. A Power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch and conduct current in power-conversion circuits. N-channel MOSFETs are the most common type due to their lower on-resistance per unit area compared to P-channel counterparts. The MDmesh family sits within STMicroelectronics' high-voltage MOSFET hierarchy (MDmesh -> PowerMESH -> Power MOSFET -> discrete semiconductor), targeting switched-mode power supply (SMPS) primary-side switches, motor-control inverters, and uninterruptible power supply (UPS) stages. Key features include a 600 V drain-source breakdown voltage rating, 90 mΩ typical Rds(on) at Vgs=10 V, and an outstanding dv/dt capability plus excellent avalanche ruggedness. The strip-based process yields overall dynamic performance that is significantly better than competing similar products. The TO-247 package provides high thermal-mass dissipation needed at 45 A continuous operation. Typical applications include high-power switched-mode power supply (SMPS) primary switches, three-phase inverter bridges for motor drives, induction heating, welding converters, photovoltaic string inverters, and uninterruptible power supply (UPS) front-end PFC and bridge stages. The 600 V rating provides ample headroom above 400 V PFC bus rails. When designing with this device, gate-drive voltage must reach 10 V for full enhancement to achieve the lowest Rds(on). At full 45 A load, ensure heatsink thermal resistance keeps Tj below 150 °C, and gate-source protection with a Zener clamp is recommended in motor-control environments where dv/dt stresses are severe. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
The STMicroelectronics STW45NM60-H is an N-channel 600 V, 45 A MDmesh power MOSFET housed in a TO-247-3 through-hole package with a typical on-resistance of 90 mΩ. Built on ST's revolutionary MDmesh technology that pairs a multiple-drain process with the proprietary PowerMESH horizontal layout, it achieves an outstandingly low RDS(on), high dv/dt capability, and excellent avalanche ruggedness for demanding high-voltage switching. Key specifications include a 600 V drain-source breakdown voltage (650 V at TJMAX), 45 A continuous drain current at 25 °C case, and 417 W total power dissipation. The device offers a typical on-resistance of 0.09 Ω at VGS = 10 V, gate threshold of 4 V, and 100% avalanche-tested ruggedness. The TO-247-3 through-hole package delivers superior thermal dissipation for high-current switching topologies. What is a MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion. Within the MOSFET family, power MOSFETs are classified into categories such as planar MOSFETs, trench MOSFETs, and super-junction (charge-balance) MOSFETs. The MDmesh family - where this STW45NM60-H belongs - is a super-junction N-channel MOSFET optimized for high-voltage (>500 V) switching applications. The STW45NM60-H is a discrete power transistor used in power management and conversion circuits. Architecture-wise, the MDmesh cell combines a multi-drain vertical structure with horizontal PowerMESH metallization, producing a higher power density than competing planar MOSFETs while lowering conduction losses. The strip-layout technique minimizes dynamic drain-source capacitance, reducing switching losses in hard-switched converters such as PFC stages and half-bridge converters. Typical applications include switched-mode power supplies (SMPS) with PFC, high-voltage DC-DC converters, industrial motor drives, uninterruptible power supplies (UPS), welding equipment, and induction-heating inverter stages operating from rectified 230 V or 400 V mains. When designing with this device, ensure adequate heat-sinking - the 417 W dissipation rating is only attainable with a substantial thermal interface. For high-frequency hard-switching topologies, gate-drive resistors in the 10-47 Ω range limit ringing, while a small RC snubber across the drain-source terminals mitigates voltage spikes caused by transformer leakage inductance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not available in the manufacturer datasheet alone, giving design engineers a complete parametric view for sourcing decisions.
STX83003-AP - 400V NPN High-Voltage Fast Switch BJT | STMicro
The STMicroelectronics STX83003-AP is a 400 V, 1 A NPN bipolar junction transistor built on high-voltage Multi Epitaxial Planar technology and housed in a TO-92-3 through-hole package with Ammo Pack (AP) tape packaging. Designed for high switching speeds and medium voltage capability, the device uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide Reverse Bias Safe Operating Area (RBSOA). What is a high-voltage fast-switching NPN BJT? It is a bipolar junction transistor whose collector-emitter breakdown voltage (VCEO) is rated at several hundred volts while still providing sub-microsecond fall times, enabling efficient drive of inductive loads such as fluorescent lamp ballasts, deflection circuits, and switching-mode power supply snubbers. Within the transistor hierarchy, this places STX83003-AP as NPN BJT -> bipolar transistor -> discrete semiconductor -> semiconductor device. Key specifications include a collector-emitter breakdown voltage of 400 V, continuous collector current of 1 A, total power dissipation of 1.5 W in free air, DC current gain (hFE) minimum of 16 at 350 mA / 5 V, and a low VCE saturation characteristic that minimizes conduction loss in switching applications. The TO-92-3 package is the industry-standard through-hole outline, allowing PCB replacement without footprint rework for designers migrating from legacy ZTX or MPSA-style high-voltage transistors. Architecture-wise, the Multi Epitaxial Planar process delivers narrow dynamic-parameter spread and minimum lot-to-lot spread for reliable operation across production batches. The Cellular Emitter geometry and planar edge termination suppress localized hot-spotting at high dV/dt, supporting a wide RBSOA that is critical when the transistor turns off inductive loads where the collector voltage spikes above the DC rail. Typical applications include electronic ballasts for fluorescent lighting, switching regulators, high-voltage DC-DC converters, deflection circuits for CRT displays, and general-purpose medium-voltage N power switching where a small-signal BJT such as the 2N5551 lacks voltage headroom. Compared with the surface-mount STN83003 in SOT-223, the STX83003-AP offers a TO-92 through-hole form factor favored by hobbyist, replacement, and through-hole industrial designs. Designers should observe a maximum junction temperature of 150°C and derate dissipation according to the TO-92 thermal resistance (approximately 200°C/W free air). A small clip-on heatsink or PCB copper thermal relief noticeably improves RBSOA margin in continuous high-voltage switching service. A base-drive resistor of 1 kΩ to 10 kΩ is recommended to control turn-off dV/dt and limit stored base charge. This page combines distributor pricing, parametric comparison with drop-in equivalents, and design guidance not consolidated in the manufacturer datasheet.
SUM60061EL-GE3 - 80V 150A P-Channel TrenchFET MOSFET | Vishay
The Vishay Siliconix SUM60061EL-GE3 is a P-Channel TrenchFET power MOSFET rated at 80 V VDS and 150 A continuous drain current (Tc) with 375 W power dissipation (Tc), housed in a surface-mount TO-263 (D2PAK) package. The '-GE3' suffix indicates the device is supplied lead-free and halogen-free, fully RoHS-compliant, with a matte-tin finish qualified for high-reflow soldering profiles. It is a member of the SUM6xxxx TrenchFET family, a line of P-channel MOSFETs designed for high-current switching applications where low on-resistance and high avalanche ruggedness are required. A P-channel MOSFET (PMOS) is a majority-carrier field-effect transistor whose channel is composed of p-type carriers (holes). PMOS devices simplify high-side switching circuits because they turn ON when the gate is pulled below the source, eliminating the need for a bootstrap or charge-pump circuit that N-channel high-side switches typically require. The SUM6xxxx family falls under the broader hierarchy of: P-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management component. Key features of the SUM60061EL-GE3 include an extremely low typical on-resistance (RDS(on)) in the single-digit milliohm range at VGS = -10 V, fast switching, and 100% Rg and UIS (unclamped inductive switching) tested for avalanche ruggedness. The TO-263 (D2PAK) surface-mount package exposes a large metal tab for direct PCB heatsinking, enabling continuous high-current operation on FR-4 boards with proper copper-pour design. The SUM60061EL-GE3 uses Vishay's proprietary TrenchFET silicon technology, which etches vertical trenches into the silicon die to dramatically increase channel density per unit area. This produces lower RDS(on) per die size than planar MOSFETs, reducing conduction losses and improving thermal performance in compact surface-mount designs. Typical applications include power-OR-ing in redundant supply systems, battery protection and load switching in 48 V telecom rails, motor-drive reverse-battery protection, eMobility and forklift controllers, hot-swap circuits on server backplanes, and synchronous-rectifier secondary-side switching in industrial SMPS. Designers favor it when a logic-level P-channel high-side switch must drop minimal voltage at high current. When designing with this device, ensure VGS(th) is exceeded by a healthy margin at logic high levels, and provide adequate copper-pour area on the TO-263 tab to keep junction temperature below 175 C. Because P-channel MOSFETs carry current through the body diode during dead-time in half-bridge topologies, account for reverse-recovery loss if used as a synchronous rectifier. The lead-free (Sn) finish supports peak reflow temperatures up to 260 C per IPC/JEDEC J-STD-020. This page synthesizes distributor pricing, drop-in TrenchFET alternatives, and practical PCB thermal guidance not found in the manufacturer datasheet alone.