MOSFET
产品（1294)
IRLZ44NPBF - 55V 47A N-Ch Logic-Level MOSFET | Infineon
The Infineon IRLZ44NPBF is an N-channel logic-level power MOSFET rated at 55V VDS and 47A continuous drain current (TC), housed in a TO-220AB through-hole package. It features an ultra-low on-resistance of 22 mΩ at VGS=10V and a low gate charge of 32 nC, making it well suited for high-efficiency switching applications where 5V or 3.3V microcontroller logic must directly drive the gate. A logic-level MOSFET (also called a logic-gate MOSFET or LL-MOSFET) is a power MOSFET whose gate-threshold voltage and full-enhancement gate drive voltage are low enough to be turned fully on by standard digital logic levels (typically 4V-5V VGS). Unlike standard MOSFETs that require 10V VGS to achieve rated RDS(on), logic-level MOSFETs simplify driver design, eliminate the need for gate-driver ICs or charge pumps, and are widely used in microcontroller-driven power switching, battery protection circuits, and low-voltage motor control. The IRLZ44NPBF sits in the broader power MOSFET taxonomy: MOSFET -> power MOSFET -> N-channel enhancement mode -> logic-level N-channel MOSFET. Key specifications include a continuous drain current ID of 47A at TC=25°C, pulsed drain current IDM of 160A (pulse width limited by SOA), and static drain-to-source on-resistance RDS(on) of 22 mΩ maximum at VGS=5V and ID=25A. The device also features an avalanche-rated body diode, an operating junction temperature range of -55°C to +175°C, and a power dissipation of 110W at TC=25°C. The TO-220AB package provides a low thermal resistance junction-to-case (RθJC) of 1.4°C/W, enabling effective heat-sinking through the mounting tab. The IRLZ44NPBF is built on Infineon's advanced HEXFET power MOSFET process technology, which uses a vertical DMOS structure with a planar gate. This architecture yields low on-resistance per unit silicon area, high avalanche ruggedness, and fast switching speeds. The device is fully characterized for switching losses at 5V gate drive, which is critical for microcontroller-driven applications where higher VGS would be impractical without a dedicated gate driver. Typical applications include DC motor speed control (PWM at 1-25 kHz), solenoid and relay drivers, battery protection circuits in 12V-24V lead-acid and lithium packs, low-frequency switch-mode power supply (SMPS) synchronous rectifiers, LED drivers with PWM dimming, and general-purpose high-side/low-side switching in automotive and industrial 12V/24V systems. Its logic-level gate drive also makes it suitable for Arduino/Raspberry Pi GPIO-driven load switches when gate pull-down resistors are added for fail-safe default-off behavior. When designing with the IRLZ44NPBF, ensure the gate is driven to at least 5V for full enhancement; 3.3V logic alone will not fully turn on the device and will result in excessive RDS(on) and conduction losses. A 100Ω gate resistor is recommended to damp ringing, and a 10kΩ gate-to-source pull-down resistor ensures the MOSFET stays off during MCU reset. The TO-220 tab must be electrically isolated from the heatsink if the drain tab is connected to a non-grounded rail. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, giving engineers a one-stop reference for sourcing and applying the IRLZ44NPBF.
IRLZ44ZPBF - 55V 51A Logic-Level HEXFET MOSFET | Infineon
The Infineon IRLZ44ZPBF (formerly International Rectifier) is a 55V, 51A single N-channel logic-level HEXFET power MOSFET housed in a TO-220AB through-hole package. It features an extremely low on-resistance of 13.5 mOhm maximum at VGS=10V and 22 mOhm at VGS=4.5V, with a total gate charge of 24 nC. The part is specifically designed for automotive applications and uses advanced process technology to achieve low RDS(on) per silicon area. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically an oxide layer) to modulate current flow between the drain and source terminals. N-channel MOSFETs like the IRLZ44ZPBF conduct when a positive gate-to-source voltage is applied, and are favored in low-side switching topologies because of their lower on-resistance per unit area compared to P-channel equivalents. The IRLZ44ZPBF belongs to the logic-level HEXFET family, optimized for direct drive from 5V or 3.3V microcontrollers without requiring a dedicated gate driver. Key features include 175C maximum junction operating temperature, fast switching speed, improved repetitive avalanche rating, and JEDEC-qualified logic-level gate drive capable of operation at VGS as low as 4.5V. The TO-220AB package provides a thermal resistance of 62 C/W junction-to-case and is widely accepted in industrial and automotive through-hole designs. The IRLZ44ZPBF utilizes International Rectifier's HEXFET cell technology with a vertical DMOS structure, providing low on-resistance, high current handling, and robust avalanche energy capability. The logic-level threshold allows direct PWM drive from 5V logic, eliminating the need for gate driver ICs in many applications and reducing BOM cost and PCB complexity. Typical applications include automotive fuel injection control, DC motor drives, solenoid drivers, low-voltage power conversion, and high-current switching in industrial control. The 175C junction rating and automotive-grade qualification make it particularly suitable for under-hood automotive electronics and other harsh-environment designs. When designing with this MOSFET, ensure gate drive voltage reaches at least 10V for full RDS(on) performance. At 4.5V drive, on-resistance approximately doubles, increasing conduction losses. Add a gate resistor (10-100 ohm) to control ringing and a TVS or zener clamp for inductive load protection. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, enabling faster part selection and BOM validation for engineering teams.
ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
The Infineon ISA150233C03LMDSXTMA1 is an OptiMOS 3 dual N-channel and P-channel power MOSFET in a single PG-DSO-8 surface-mount package rated for 30 V operation. It combines a 30 V N-channel and a 30 V P-channel device with continuous drain currents of 7.6 A (Ta) and 10.2 A (Tc) for the N-channel and 6.6 A (Ta) and 8.8 A (Tc) for the P-channel, dissipating up to 1.4 W (Ta) or 2.5 W (Tc). The complementary pair is optimized for synchronous buck, half-bridge, and H-bridge topologies where space, thermal coupling, and switching symmetry matter. What is a dual N+P MOSFET? It is a single package that integrates one N-channel and one P-channel enhancement-mode MOSFET sharing a drain, source, or independent substrate configuration. Within the broader semiconductor taxonomy it sits as: dual MOSFET -> MOSFET array -> discrete semiconductor -> power transistor. Integrating both polarities lets designers build complementary switching stages - such as push-pull amplifiers, synchronous rectifiers, and reversible motor drivers - with fewer parts and matched switching characteristics, which simplifies PCB layout and improves thermal symmetry. Key features include Infineon's OptiMOS 3 trench technology for low on-state resistance, low gate charge, and fast switching transitions. The 30 V VDS rating suits point-of-load converters and 12 V bus rails. The PG-DSO-8-920 footprint follows the industry-standard SO-8 power pad outline, enabling drop-in placement on existing layouts. The integrated ESD protection and avalanche-rated body diode further strengthen reliability in motor and inductive-load applications. Architecturally, OptiMOS 3 uses a charge-balanced trench gate and an optimized cell pitch to achieve low RDS(on) at small silicon area. The N-channel typically reaches the lower milliohm range while the P-channel trades higher resistance for the convenience of a high-side pull-up or reverse-polarity switching. Both halves share a thermal pad that ties heat directly into the PCB copper, allowing the SO-8 package to dissipate up to 2.5 W with adequate copper pours. Typical applications include robotics motor drives, DC-DC synchronous buck converters, half-bridge and full-bridge driver stages, USB Power Delivery load switches, and battery protection circuits in 1S-3S Li-ion packs. The complementary pair excels wherever a single-rail supply must switch both polarities efficiently. When designing with this part, observe VGS gate-drive thresholds, keep the gate-loop area minimal to control ringing, and provide sufficient copper under the thermal pad to keep Tj within the SOA. Designers should derate based on case temperature per the datasheet's Diagram 2 rather than ambient temperature alone. This page synthesizes Infineon datasheet parameters, distributor pricing, drop-in alternatives, and application-specific design notes not consolidated on the manufacturer's product brief.
ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
The Infineon ISA250300C04LMDSXTMA1 is a 40V dual N-channel and P-channel MOSFET array built on Infineon's OptiMOS 3 power-transistor process, delivered in a compact SO-8 (PG-DSO-8-920) surface-mount package. It combines one N-channel and one P-channel device on a single die, supporting continuous drain currents up to 5.9 A (Ta) and 7.9 A (Tc) per channel depending on thermal mounting, with a power dissipation rating of 1.4 W (Ta) and 2.5 W (Tc). The N+P complementary topology makes it ideal for half-bridge, full-bridge, and synchronous-buck DC-DC converter stages where a low-side N-FET and high-side P-FET can be driven with simplified gate drive. An N+P complementary MOSFET array is a co-packaged pair of N-channel and P-channel power transistors sharing one package substrate, allowing one device to replace two discrete MOSFETs on the PCB. In the power-management hierarchy it sits under voltage regulators and DC-DC converters; OptiMOS 3 specifically targets low-voltage (<=60V) point-of-load converters, motor drivers, and load-switch blocks where figure-of-merit (RDS(on) x Qg) directly determines switching losses. Key parametric highlights include a 40V drain-source breakdown rating on both channels, low on-resistance per channel typical of OptiMOS 3, an SO-8 footprint that drops onto standard SOIC-8 land patterns, and a tape-and-reel packaging option (suffix XTMA1) compatible with high-volume SMT assembly. The device is targeted at compact DC-DC, drone, and robotics applications per the manufacturer's product page. The OptiMOS 3 process uses trench MOSFET technology to minimize per-cell on-resistance while keeping gate charge low. The complementary pair architecture removes the need for a charge pump on the high-side switch because the P-channel can be driven directly from the input rail, simplifying gate drive design at the cost of slightly higher RDS(on) versus an equivalent N+N pair. Typical applications include compact synchronous buck converters, half-bridge motor drivers for drones and small robotics, USB-PD and battery-management load switches, and general-purpose half/full-bridge switching stages. The 40V rating provides ample headroom for 12V bus systems including automotive and industrial 24V nominal rails when de-rated properly. The N+P pair also suits buck-boost and Cuk topologies where one channel must block reverse voltage. When designing with this part, calculate total power dissipation per channel (P = I^2 * RDS(on)) and confirm that the SO-8 thermal pad can sink the resulting heat. Below 2.5 W per package the SO-8 can typically run without an explicit heatsink on a 1-oz copper pad; above that, a thermal via array and enlarged copper pour are recommended. Also confirm the P-channel VGS(th) range is compatible with your gate-drive logic-level swing (3.3V or 5V). This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet, giving engineers a faster sourcing and selection path for compact N+P MOSFET array designs.
ISC008N06LM6ATMA1 - 60V OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon ISC008N06LM6ATMA1 is a single N-channel OptiMOS 6 power MOSFET rated at 60 V drain-source voltage, delivering up to 44 A continuous drain current at 25 C case temperature (378 A pulsed at Tc) in a compact surface-mount PG-TDSON-8 package. Per the Infineon datasheet revision 2.0 dated 2024-05-06, this part is part of Infineon's latest-generation 60 V logic-level MOSFET family optimized for high-current applications with industry-leading FOM (figure of merit) and RDS(on) below 1 mOhm at 10 V gate drive. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source terminals. OptiMOS 6 represents Infineon's 6th-generation trench MOSFET platform, which sits within the broader discrete semiconductor taxonomy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. N-channel enhancement-mode MOSFETs are the workhorses of switched-mode power conversion because their low on-resistance and fast switching enable high-efficiency buck, boost, and half-bridge topologies. The ISC008N06LM6 family delivers greater than 37% lower RDS(on) and approximately 25% higher figure of merit compared to the prior OptiMOS 5 generation. Maximum power dissipation is 3 W at the standard PCB footprint (Ta) and 221 W with case-controlled cooling (Tc). The device is rated for operation from -55 C to +175 C junction temperature and is fully RoHS compliant with lead-free (Pb-free) terminal plating suitable for reflow soldering up to 260 C peak temperature. Architecturally, the ISC008N06LM6 uses Infineon's advanced shielded-gate trench technology, which reduces both conduction losses (lower RDS(on)) and switching losses (lower Qg, Qgd) versus planar MOSFETs. The PG-TDSON-8 package with exposed drain pad provides an ultra-low thermal resistance path to PCB copper, enabling the 378 A pulsed current rating. Logic-level VGS(th) makes this part directly compatible with 3.3 V and 5 V microcontroller GPIO drives, eliminating the need for gate-driver bootstrap circuits in low-power applications. Typical applications include OR-ing FETs in redundant power systems, hot-swap controllers in server backplanes, motor drive H-bridges for 12 V brushless DC fans and pumps, battery protection circuits in 12-48 V e-mobility packs, synchronous rectification in telecom DC-DC converters, and USB Power Delivery (PD) source sinks where high peak currents must be switched safely. When designing with this MOSFET, ensure the gate-drive voltage exceeds the maximum VGS(th) rating under all temperature conditions and that the PCB layout keeps the source inductance below 5 nH to limit voltage overshoot during turn-off. Use Kelvin-source connection where available on the package for the cleanest switching performance. This page synthesizes distributor pricing, same-family alternatives from Infineon's OptiMOS 6 portfolio, and practical design notes not consolidated in the manufacturer datasheet itself.
ISC009N03LF2SATMA1 - 30V 341A 0.9mΩ N-Channel MOSFET | Infineon
The Infineon ISC009N03LF2SATMA1 is a 30 V N-channel MOSFET housed in a PG-TDSON-8-62 (SuperSO8 5x6) surface-mount package, rated for 341 A continuous drain current at case temperature and 0.9 mΩ maximum on-resistance. The device uses Infineon's OptiMOS™ trench technology and targets 12 V to 48 V high-current switching applications where both low conduction loss and small footprint are required. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical energy in switching power supplies, motor drives, and battery management. Within the discrete-semiconductor hierarchy, MOSFETs sit beneath transistors and above specialized sub-types such as logic-level FETs; the N-channel enhancement-mode variant is the most common building block for low-side and high-side switching in DC-DC converters. The ISC009N03LF2SATMA1 belongs to the Infineon 30 V OptiMOS family, optimized for low RDS(on) at small package sizes. Key specifications include a 30 V drain-source breakdown voltage, 341 A continuous drain current at TC, 0.9 mΩ maximum RDS(on) at VGS = 10 V, and a gate threshold voltage around 2.35 V. The 188 W power dissipation rating at TC allows operation in high-current paths without immediate thermal derating concerns, while the SuperSO8 5x6 footprint (PG-TDSON-8-62) provides an exposed pad that drops junction-to-case thermal resistance dramatically compared to smaller MOSFET packages. Architecturally, the part uses a trench-gate cell design that maximizes channel density per square millimeter, which directly translates to the sub-milliohm RDS(on). This is achieved by shrinking the unit cell pitch while preserving a robust breakdown margin suitable for 30 V systems and short transient over-voltages on 24 V buses. Typical applications include high-current DC-DC converters, e-mobility and e-bike motor control, battery management system (BMS) protection, hot-swap and OR-ing circuits, and 24 V industrial load switching. Designers typically place it as the low-side synchronous FET in point-of-load converters or as the main switch in hot-swap controllers. When designing with this part, ensure the gate driver can supply and sink sufficient peak current to charge the gate charge quickly; a 10 V gate drive is required to achieve the rated 0.9 mΩ. PCB layout must provide a low-impedance source connection and adequate copper area on the exposed pad. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
ISC009N06LM5ATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon
The Infineon ISC009N06LM5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 60V technology, offering an ultra-low maximum on-resistance of 0.9 mOhm and continuous drain current of 348 A (Tc) in a compact PG-TSON-8-3 (SuperSO8 5x6) surface-mount package. The device is rated for 60 V VDS, supports up to 41 A continuous drain current at ambient (Ta), and delivers 214 W of power dissipation at case temperature. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion circuits. OptiMOS 5 is Infineon's fifth-generation 60V-300V trench MOSFET platform, positioned within the broader power MOSFET -> discrete semiconductor -> semiconductor taxonomy. Its hallmark is a 50% lower on-resistance per area versus prior generations, reducing conduction loss in high-current paths. Key differentiating features include an RDS(on) of 0.9 mOhm max at VGS=10V, an exceptionally low FOM (figure of merit), and an avalanche-rated single-pulse body diode. The PG-TSON-8-3 package exposes a large top-side thermal pad, achieving a junction-to-case thermal resistance (RthJC) well below 1 C/W, which allows direct PCB cooling through copper pours. Architecturally, the ISC009N06LM5 uses a shielded-gate trench cell structure that minimizes Miller charge (Qg) and gate-drain capacitance, enabling fast switching at high frequencies. According to the Infineon datasheet, the device is optimized for synchronous rectification in switched-mode power supplies (SMPS) where its low Qrr body diode and low Qg keep circulating losses minimal. Typical applications include high-current synchronous rectification in 48V telecom and server DC-DC converters, OR-ing and hot-swap circuits in server/AI accelerator boards, motor drive half-bridges for industrial automation, USB-PD and high-power battery protection in e-mobility, and solar MPPT power stages. Designers pair this MOSFET with a gate driver such as the Infineon EiceDRIVER 1EDN series for 5V-12V logic-level drive. When designing with the ISC009N06LM5ATMA1, minimize the high-side source-inductance loop by placing the gate driver and bypass capacitor within 5 mm of the gate and source pins. The exposed pad (PG-TSON-8-3) must be soldered to a copper area of at least 25 mm² on the top layer, with thermal vias connecting to inner ground planes to sustain the 214 W power-dissipation capability. This page synthesizes distributor pricing from DigiKey, Mouser, LCSC and Arrow, parametric cross-reference alternatives, and practical design notes - an information package not consolidated in the manufacturer datasheet alone.
ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon
The Infineon ISC009N06NM6ATMA1 is an N-channel 60 V OptiMOS 6 power MOSFET rated for 40 A continuous drain current at 25 °C case (Ta) and 344 A pulsed (Tc) in a PG-TDSON-8 (3x3 mm) surface-mount package. As a member of Infineon's OptiMOS 6 60 V family, this part delivers >37% lower R<sub>DS(on)</sub> and approximately 25% higher figure-of-merit Q<sub>g</sub>×R<sub>DS(on)</sub> versus the prior OptiMOS 5 generation, providing a step improvement in switching and conduction losses for high-frequency power conversion. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch or amplify electronic signals in power applications. MOSFETs sit at the bottom of a hierarchy that reads: MOSFET -> power transistor -> discrete semiconductor -> power management IC. Within the N-channel MOSFET category, low-voltage (≤100 V) parts such as the ISC009N06NM6 are the workhorse switches for synchronous buck converters, half-bridges, and OR-ing functions in 12 V/24 V/48 V systems. Key electrical specifications include a 60 V drain-to-source breakdown (V<sub>(BR)DSS</sub>), typical R<sub>DS(on)</sub> in the sub-1 mΩ class (per the OptiMOS 6 60 V family), ultra-low gate charge Q<sub>g</sub>, and a 3 W steady-state dissipation on the PCB (Ta) rising to 221 W with case reference (Tc). The PG-TDSON-8 footprint exposes the drain through a large thermal pad, keeping R<sub>thJA</sub> low enough to deliver 40 A continuous with proper copper layout. OptiMOS 6 uses Infineon's latest trench-gate silicon process that simultaneously optimizes R<sub>DS(on)</sub>·Q<sub>g</sub>, R<sub>DS(on)</sub>·Q<sub>oss</sub>, and R<sub>DS(on)</sub>·Q<sub>rr</sub> trade-offs, resulting in lower switching-node ringing and reduced reverse-recovery losses in hard-switched topologies. This makes it well suited to high-frequency DC-DC and motor-drive stages where every 10 kHz of switching frequency rise demands proportional efficiency gains. Typical applications for the ISC009N06NM6ATMA1 include synchronous rectification in 48 V telecom and server DC-DC converters, high-current buck regulators in industrial automation, battery management and protection in 12 V/24 V Li-ion packs, motor drive and H-bridge low-side switches in robotics, and USB-PD / notebook adapter secondary-side rectification. When designing with this MOSFET, prioritize minimizing source-loop inductance in the PCB layout and use a Kelvin-source connection when available in the gate-drive circuit. Pair it with an Infineon EiceDRIVER gate driver (such as the 1EDN71x6 family) to obtain matched propagation delay and clean Miller plateau control. Confirm SOA against your worst-case transient (cold-crank, inrush, short-circuit) using the datasheet's Diagram 2 de-rating curve. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, giving engineers a single source to compare sourcing options and evaluate second-source risk for the ISC009N06NM6ATMA1 footprint.
ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
The Infineon ISC011N03L5SATMA1 is a logic-level N-channel power MOSFET built on Infineon's OptiMOS 5 30V platform, delivering 37 A continuous drain current at 25 C ambient (100 A at case temperature) in a compact 8-pin PG-TDSON-8-1 (TDSON EP) surface-mount package. It is rated for a drain-source voltage of 30 V and a continuous drain current of 37 A (Ta) / 100 A (Tc) with power dissipation of 2.5 W (Ta) / 96 W (Tc). The -L5S suffix indicates the OptiMOS 5 low-voltage StrongIRFET/OptiMOS family with the lowest on-resistance class in the 30 V OptiMOS 5 generation. What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled three-terminal semiconductor switch where the channel between drain and source is formed by an N-type inversion layer under the gate oxide. N-channel devices offer lower on-resistance per unit silicon area than P-channel equivalents because electron mobility is 2-3x higher than hole mobility. Power MOSFETs such as the ISC011N03L5S belong to the discrete semiconductor family, sit under the power MOSFET subcategory, and are commonly used as low-side switches, high-side switches (with gate driver), and synchronous rectifier stages in switching converters. Key features of the ISC011N03L5SATMA1 include an industry-leading ultra-low RDS(on) in the 30 V OptiMOS 5 family (targeting high-efficiency DC-DC conversion), logic-level gate drive (VGS(th) typically in the 1.0-1.7 V range for direct MCU GPIO driving at 3.3 V), and a small 5 mm x 6 mm TDSON footprint that maximizes power density per PCB area. The PG-TDSON-8-1 package exposes the die to a thermal pad that significantly reduces junction-to-case thermal resistance, supporting up to 96 W dissipation at case. Technically, the device uses Infineon's advanced trench MOSFET cell architecture to minimize both on-resistance and gate charge, achieving a figure of merit (FOM = RDS(on) x Qg) tuned for high-frequency switching. The combination of low Qg and low RDS(on) reduces both conduction and switching losses, making the part well suited to hard-switched topologies at 500 kHz to 1 MHz. The TDSON EP package is JEDEC-registered and is drop-in compatible with other Infineon StrongIRFET/OptiMOS 5 30 V parts in the same family. Typical applications include high-current DC-DC buck converters (telecom POL, server VRM), motor drive H-bridges (12 V brushless DC and brushed DC motors), battery management systems for e-mobility tools, synchronous rectification in low-voltage SMPS, hot-swap / eFuse switches on 12 V distribution rails, and OR-ing FETs in redundant power architectures. The 30 V rating provides adequate margin for nominal 12 V automotive/industrial rails with transient tolerance to 24 V load-dump events. When designing with this MOSFET, pay close attention to gate-drive voltage and dv/dt-induced turn-on: a 10 kV/us transient on the drain can partially turn on the FET through the Miller capacitance. Place the gate-source pull-down resistor (typically 10 kohm to 100 kohm) as close to the GS pins as possible, and route the high-current loop (drain-source) over the smallest area to minimize parasitic inductance. The exposed pad must be soldered to a sufficiently large copper pour (>= 1 cm^2) to keep thermal rise within design limits. This page synthesizes Infineon datasheet specifications, distributor pricing tiers from DigiKey, Mouser, and Octopart, drop-in same-package alternatives, and practical PCB layout / thermal design notes not consolidated on the manufacturer product page.
ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon ISC011N04NM7VATMA1 is an N-channel OptiMOS 7 Power-Transistor rated at 40 V drain-source voltage with 1.1 mΩ maximum on-resistance (10 V VGS), housed in the source-down PG-TDSON-8 surface-mount package. The device supports 38 A continuous drain current at TA = 25 °C and 256 A at TC, with power dissipation of 3 W (TA) and 136 W (TC), positioning it as Infineon's price-performance optimized 40 V trench MOSFET for high-current point-of-load and motor-drive stages. An N-channel enhancement-mode power MOSFET is a voltage-controlled three-terminal device in which a positive gate-to-source voltage inverts a p-channel surface to form a conducting n-channel between drain and source. Within the broader taxonomy, MOSFETs belong to the discrete power-semiconductor family alongside IGBTs and wide-bandgap (SiC/GaN) FETs, and OptiMOS 7 represents Infineon's latest 40 V trench-generation silicon platform engineered to reduce switching and conduction losses simultaneously. The "N-channel 40 V, 1.1 mΩ" subclass is widely used as a synchronous rectifier, low-side switch, and hot-swap FET. Key features of the ISC011N04NM7V include price-performance optimization, up to 3× wider safe-operating area than the prior generation, built-in short-circuit current limitation, an elevated threshold voltage up to 3.2 V for noise immunity, controlled transconductance (gfs) for clean current sensing, and a source-down PG-TDSON-8 footprint that pulls the main current path to the top of the package to minimize PCB loop inductance. The widened SOA combined with short-circuit ruggedness enables use in harsh environments where transient overloads and inductive kickbacks are common. Architecturally the device is a single-die trench MOSFET in a leadless source-down package. The source-down topology places both source contacts and the thermal pad on the same side, dramatically lowering thermal resistance and parasitic source inductance compared with traditional drain-down TDSON layouts. Combined with controlled gfs, this allows very high peak-current handling (256 A pulsed at TC) while maintaining a predictable current-sense signal. Typical applications include e-scooter and light-EV motor drives, 12 V/24 V automotive e-fuse and battery protection, telecom 48 V hot-swap, server point-of-load synchronous rectification, USB-PD source sinks, and high-current DC-DC buck stages. In each scenario the wide SOA, 1.1 mΩ RDS(on), and source-down thermal advantage combine to shrink solution size and improve efficiency. When designing with this part, observe the maximum junction temperature and ensure the PCB copper area on the source pad is sized to keep thermal resistance within budget. The elevated Vth up to 3.2 V means standard 3.3 V microcontrollers can drive this FET directly without a dedicated gate-driver IC in low-frequency switching roles, simplifying BOM cost. This page synthesizes distributor pricing, parametric drop-in alternatives, and application design guidance not consolidated on a single manufacturer datasheet - enabling faster part selection and BOM risk reduction for power-system design engineers.
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
The Infineon ISC011N06LM5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 60V platform, delivering an ultra-low maximum on-state resistance of 1.15 mOhm at 10 V VGS, a continuous drain current of 37 A (Ta) / 288 A (Tc), and a power dissipation rating of 188 W (Tc), housed in a SuperSO8 / PG-TDSON-8-17 (5x6 mm) surface-mount package. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain. Within the power semiconductor hierarchy, the MOSFET sits below IGBTs in voltage class and below SiC/GaN wide-bandgap devices in switching frequency; OptiMOS 5 specifically represents Infineon's 60 V/100 V/150 V generation that targets synchronous rectification, motor drive, and hot-swap applications. The N-channel variant requires a positive gate drive relative to source. Key features include 1.15 mOhm max RDS(on) at VGS=10 V (significantly reducing conduction losses versus older 60 V generations), 60 V VDS rating for 48 V automotive and telecom bus systems, and an optimized gate charge for fast switching at high frequencies. The SuperSO8 5x6 mm package exposes a large thermal pad, supporting the 188 W (Tc) dissipation rating while keeping board footprint compact. The OptiMOS 5 process technology improves Figure-of-Merit (RDS(on) x Qg) versus prior generations, enabling higher power density converters and lower-temperature operation. Typical applications include synchronous rectification in 48 V DC-DC converters, hot-swap and OR-ing controllers, motor control H-bridges for e-mobility, and battery management protection FETs. The combination of very low RDS(on) and high pulsed current capability also makes it suitable for e-fuse and inrush-limiting circuits where the device must sustain surge currents without tripping. When designing with this MOSFET, ensure the gate driver can supply the peak gate current required for the total gate charge (Qg) at the desired switching frequency, and provide sufficient PCB copper area beneath the exposed pad to keep junction temperature within the 175 C absolute maximum. Always observe the SOA curve for pulsed-current applications such as hot-swap. This page synthesizes distributor stock, parametric alternatives in the same SuperSO8 footprint, and practical design notes not collated in the manufacturer datasheet, helping engineers select between ISC011N06LM5 variants and competing 60 V MOSFETs.
ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon
The Infineon ISC015N03LF2SATMA1 is a 30 V N-channel power MOSFET in Infineon's OptiMOS™ 2 family, rated for 214 A continuous drain current at case temperature and housed in a surface-mount PG-TDSON-8-62 (TDSON EP) package. It is built on Infineon's trench MOSFET process and targets high-current, low-voltage synchronous rectification, hot-swap, and battery-protection switching. A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. The "N-channel" designation means conduction is by electrons, giving the lowest on-resistance per unit silicon area. The "OptiMOS™" series is Infineon's sub-40 V trench platform positioned in the power MOSFET product hierarchy as: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management. The "-2" suffix in LF2 marks this part as a second-generation OptiMOS die optimized for figures of merit (FOM = RDS(on) × Qg) used by switching-converter designers. Key electrical characteristics per Infineon datasheet include 30 V drain-source breakdown (VDS max), 1.5 mΩ maximum on-resistance at 10 V VGS, a gate threshold around 2.35 V, and pulsed drain current capability that supports short-circuit and inrush events in telecom and server rails. The part dissipates 3 W at TA=25 °C and 125 W at TC=25 °C, demonstrating the dramatic thermal difference between PCB-side and case-side cooling. The PG-TDSON-8-62 package exposes the die through a thermal pad on the bottom, allowing direct copper heatsinking through vias to inner PCB planes. This makes ISC015N03LF2SATMA1 a strong fit for high-density synchronous buck converters, hot-swap controllers, e-fuse circuits, and OR-ing FETs in 12 V power distribution where PCB area is constrained but continuous current exceeds 100 A. Typical applications include 12 V server and telecom point-of-load converters, USB-PD and battery-pack protection FETs, motor-drive half-bridges, and eMMC/SSD power switches. Designers should plan thermal copper area before committing the footprint, since the 1.5 mΩ RDS(on) at full load still dissipates significant power at high currents. This page consolidates current distributor pricing, drop-in alternatives within the same PG-TDSON-8 footprint, and practical PCB-layout guidance not found in the manufacturer datasheet alone.
ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
The Infineon ISC015N04NM5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 40V normal-level technology, delivering a maximum drain-source voltage of 40 V and an ultra-low R_DS(on) of 1.5 mOhm in a SuperSO8 5x6 (PG-TDSON-8 FL) surface-mount package. It is rated for 33 A continuous drain current at case temperature 25 C (Ta) and up to 206 A pulsed at Tc, with a maximum power dissipation of 115 W (Tc), making it one of the most efficient 40V MOSFETs in its footprint class. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the workhorse switching element in modern power-conversion stages. Within the broader taxonomy it sits under discrete semiconductors, then transistors, then MOSFETs; the N-channel enhancement-mode variant is the most common because electrons carry the current, giving lower R_DS(on) for a given silicon area than equivalent P-channel devices. The OptiMOS 5 40V normal-level family targets applications needing a higher gate-threshold voltage than logic-level parts, providing better noise immunity in 12 V and 24 V bus systems. Key features include a typical gate threshold of 3.4 V at VGS = 10 V (qualifying it as a normal-level part), 1.5 mOhm maximum R_DS(on) at VGS = 10 V and ID = 50 A, and an optimized SuperSO8 source-down package with an exposed thermal pad. This combination reduces conduction losses dramatically - approximately 30% lower R_DS(on) than the previous OptiMOS 3 generation in the same footprint. The architecture uses a trench-cell silicon process optimized for 40 V breakdown, with an integrated Schottky-like body diode for improved reverse-recovery behaviour. The SuperSO8 5x6 footprint provides a top-side thermal pad that conducts heat efficiently into the PCB copper, enabling higher continuous current in compact designs such as VRM phases and OR-ing switches. Typical applications include synchronous rectification in 12 V buck converters for servers and telecom, OR-ing and hot-swap controllers in 24/48 V industrial systems, motor-drive H-bridges in e-mobility and power tools, USB Power Delivery (PD) and high-current point-of-load regulators, and battery protection in 12 V e-bike and 24 V solar systems. When designing with this part, prioritize a low-inductance gate-drive loop by placing the gate resistor within 5 mm of pin 4 and using a Kelvin-source connection when available. The SuperSO8 exposed pad must be soldered to a copper pour of at least 50 mm squared to keep RthJA within published limits; neglecting this will derate the part's continuous current by 30-40%. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet, giving power-system engineers a single reference for evaluation, sourcing, and PCB layout.
ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
The Infineon ISC015N06NM5ATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 60V drain-to-source voltage with an extremely low typical on-resistance of 1.5 mOhm at 10V VGS, housed in a space-saving PQFN 5x6 (PG-TDSON-8) drain-down surface-mount package. It is specified for 33A continuous drain current at TA=25C and up to 259A pulsed drain current at TC=25C, with 3W power dissipation at TA and 188W at TC. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between source and drain. N-channel MOSFETs are the most common switching-device type in synchronous buck converters, motor drives, and load switches, sitting within the hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. The 'N-channel' designation means the majority carriers are electrons, which gives higher mobility and therefore lower RDS(on) for a given die area than equivalent P-channel parts. Key differentiating specifications include: ultra-low RDS(on) of 1.5 mOhm typical at VGS=10V that minimizes conduction loss; switching-optimized OptiMOS 5 cell architecture with low gate charge and low Qrr (reverse-recovery charge) to reduce switching loss in high-frequency SMPS stages; 60V VDS rating that comfortably covers 12V and 24V rails plus transient headroom; and a PQFN 5x6 drain-down footprint that allows direct heat extraction into the PCB copper. The part also features an avalanche-rated single-pulse body diode and is qualified to JEDEC standards for industrial environments. Technically, OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform using a refined super-junction-like geometry and thin wafer technology. The 'drain-down' PG-TDSON-8 construction exposes the die-attached drain on the bottom pad, enabling very low thermal resistance from junction to PCB (RthJA typically around 35 C/W on a 1in2 copper area). This combination of low RDS(on), low gate charge, and superior thermal performance suits high-current, high-frequency switching topologies where every milliohm of conduction loss and every nanocoulomb of switching charge directly impact efficiency and thermals. Typical applications include synchronous rectification in 12V-48V DC-DC buck converters, hot-swap and OR-ing controllers in telecom/datacenter power distribution, high-current USB-PD and battery-management load switches, eFuse circuits, brushless DC motor drive stages, and industrial point-of-load regulators where the 60V rating provides headroom above 24V nominal buses. When designing with this part, prioritize minimizing source-inductance loop area on the PCB and place the gate driver within 10mm of the gate pin to control ringing. The exposed drain pad must be soldered to a sufficiently large copper pour (recommended at least 25 mm^2 of 2 oz copper) to keep RthJA within datasheet limits at full load. Pay attention to maximum junction temperature of 175C and derate accordingly when continuous current exceeds 15-20A on a small footprint. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal/design guidance that the bare datasheet does not present in one place, giving the engineer a complete purchasing and design reference.
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
The Infineon ISC015N06NM5LF2ATMA1 is an N-channel 60 V OptiMOS 5 Linear FET 2 in a PG-TDSON-8 FL (5x6 mm) package, rated for 32 A continuous drain current at Ta and 275 A pulsed at Tc, with 1.55 mΩ maximum RDS(on) at 10 V VGS and 217 W maximum power dissipation at Tc. It is engineered for linear-mode applications, offering an exceptionally wide Safe Operating Area (SOA) that makes it suited to hot-swap, e-fuse, battery management and OR-ing functions where conventional logic-level MOSFETs would otherwise enter thermal runaway. A Linear FET is a power MOSFET specifically characterized to operate safely in its linear (ohmic) region for sustained durations rather than only as a fully enhanced switch. Within the broader power-semiconductor hierarchy, Linear FETs sit under power MOSFETs, which in turn belong to the discrete semiconductor family used for switching and power conversion in modern electronics. The Infineon OptiMOS 5 Linear FET 2 family is positioned above standard trench MOSFETs because of its relaxed transfer characteristic, which limits peak MOSFET transconductance and thus keeps power dissipation bounded during inrush events. Key features include ±20 V VGS rating with 3 V minimum gate-threshold, 1.3 nC Qrr (reverse-recovery charge) optimized for low-loss switching, and a monolithic integrated Schottky-like body diode. The wide SOA typically permits several amps of continuous linear-mode current at voltages well above the safe DC ratings of similarly Rds(on)-rated standard MOSFETs, which is critical for hot-swap controllers that must pass inrush current while limiting backplane voltage droop. The part uses Infineon's latest OptiMOS 5 trench technology, which combines a low figure-of-merit (RDS(on) × Qg) with deliberately widened cell pitch to share current uniformly across the die. This engineering trade-off sacrifices some raw on-state resistance versus ultra-low-Rds(on) switching MOSFETs but delivers linear-region ruggedness that is otherwise unobtainable. Typical applications include server hot-swap and OR-ing, 48 V telecom e-fuses, battery management system (BMS) charge/discharge FETs, USB-PD sink protection, and industrial PoE loads. The PG-TDSON-8 FL exposed-flap leadless package provides a low thermal resistance path from die to PCB copper, enabling compact 60 V hot-swap designs without external heatsinking at moderate loads. When designing with this part, observe Infineon's SOA curves in the datasheet to size inrush current and duration; the linear-mode current capability decays rapidly with VDS, so engineers should pick a FET with margin between the application's worst-case operating point and the SOA boundary. Always use a gate-source pull-down resistor to guarantee defined off-state behavior during fault conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet. The ISC015N06NM5LF2ATMA1 belongs to the wider ISCxxxN06 family of Linear FET 2 parts from Infineon, which differ in on-resistance and current ratings within the same PG-TDSON-8 FL footprint.
ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon
The Infineon ISC016N08NM8ATMA1 is an 80 V N-channel OptiMOS 8 power MOSFET rated for 29 A continuous drain current at Ta (with 268 A peak capability at Tc) housed in a SuperSO8 / PG-TDSON-8 surface-mount package with 1.6 mOhm typical on-state resistance. It is part of Infineon's OptiMOS 8 generation, which delivers the lowest RDS(on) in industry-standard SuperSO8 footprints and is engineered for high-frequency synchronous rectification in switched-mode power supplies. An N-channel power MOSFET is a voltage-controlled majority-carrier device whose conduction is regulated by the gate-source voltage; modern MOSFETs such as OptiMOS 8 use trench-gate field-plate structures to simultaneously minimize on-resistance, gate charge and switching losses. MOSFETs belong to the discrete-semiconductor family and form the switching heart of nearly every DC-DC converter, motor driver and load-management system in power electronics. Key features include a maximum drain-source voltage of 80 V, continuous drain current of 29 A (Ta), pulsed capability up to 268 A (Tc), and an exceptionally low typical RDS(on) of 1.6 mOhm at 10 V VGS. The OptiMOS 8 cell shrinks gate charge (Qg) and output charge (Qoss), enabling lower switching losses and higher converter efficiency at elevated switching frequencies. The SuperSO8 (PG-TDSON-8) package provides a low thermal-resistance path to the PCB drain pad, allowing up to 263 W (Tc) dissipation with proper copper layout. Typical applications include synchronous rectification in telecom and server 48 V intermediate-bus converters, point-of-load (POL) modules, DC-DC bricks, motor drive H-bridges, hot-swap and OR-ing controllers, and battery-management protection FETs in 24 V / 48 V industrial and e-mobility systems. The combination of low Qg and low RDS(on) makes this MOSFET well-suited to high-frequency (>500 kHz) half-bridge topologies where switching loss dominates total loss. When designing with this part, ensure that the gate driver delivers at least 10 V VGS to fully enhance the channel and minimize conduction loss. Optimize PCB copper pour beneath the exposed pad to keep junction temperature below 150 C under worst-case load - 6 cm^2 of 2 oz copper on a 40 x 40 mm FR4 board is the datasheet's recommended thermal evaluation footprint. This page synthesizes distributor pricing, drop-in OptiMOS 8 alternatives, and practical design notes not found in the manufacturer datasheet alone.
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
The Infineon ISC016N08NM8SCATMA1 is an 80V N-channel OptiMOS™ 8 power MOSFET rated for 29A continuous drain current at 25°C (Ta) and 269A pulsed current (Tc), with 263W power dissipation in a surface-mount PG-WSON-8-2 (SuperSO8 DSC, dual-side cooling) package. It belongs to Infineon's latest-generation OptiMOS 8 family and is engineered for very low on-state resistance (RDS(on)) to minimize conduction losses in high-current switching applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to commutate high currents with low on-resistance. The OptiMOS 8 family sits inside the broader N-channel MOSFET hypernymy: power MOSFET -> MOSFET -> discrete semiconductor -> power management. Within Infineon's lineup, OptiMOS 8 represents the newest generation optimized for 40-200V systems, with successive generations trading on-resistance for switching speed using advanced trench-gate process technology. OptiMOS 8 specifically targets telecom, server, and OR-ing applications where every milliohm of RDS(on) translates into watt-level loss reduction. Key features of the ISC016N08NM8SCATMA1 include the 80V drain-source breakdown voltage, very low typical RDS(on) in the sub-1.6 mΩ range for the SuperSO8 DSC footprint, the dual-side cooling PG-WSON-8-2 package that exposes the die on both top and bottom for maximum thermal transfer, and 100% Rg and UIS (unclamped inductive switching) tested production lots. The SuperSO8 DSC package preserves the industry-standard 5x6 mm SuperSO8 footprint, enabling drop-in PCB migration from previous generations. Architecturally, OptiMOS 8 uses a refined shield-gate trench structure to lower RDS(on)·Qg figure of merit. Compared with OptiMOS 5 and OptiMOS 6, OptiMOS 8 typically reduces output capacitance (Coss) and gate charge (Qg) by 30-50%, enabling faster switching edges and lower driver loss in 48V bus converters, synchronous rectification, and hot-swap controllers. Typical applications include 48V telecom bus converters, server VR stages and OR-ing FETs in redundant power supplies, hot-swap and eFuse circuits in data-center backplanes, industrial SMPS synchronous rectification stages, and high-current motor drive half-bridges. Choose this part when an 80V breakdown and very low RDS(on) in the SuperSO8 DSC land pattern are required. Design consideration: the dual-side cooling package requires copper pours on both top and bottom PCB layers at the drain tab. Omitting the top-side thermal pad increases junction-to-ambient thermal resistance by approximately 2x and may force derating below 29A continuous current. This page synthesizes distributor pricing, drop-in OptiMOS 8 family alternatives, and PCB layout guidance not found in the manufacturer datasheet - providing engineers a faster path from selection to qualified source.
ISC017N04NM5ATMA1 - 40V 1.7mΩ N-Ch MOSFET | Infineon
The Infineon ISC017N04NM5ATMA1 is a 40V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, delivering an ultra-low on-state resistance of 1.7 mΩ at 10V VGS and 50A ID, packaged in a compact PG-TDSON-8 FL (5x6 mm) thermally enhanced SMD footprint with exposed pad. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to route or modulate current in power-conversion and load-driving circuits. N-channel MOSFETs such as the ISC017N04NM5 belong to the discrete semiconductor family, sitting alongside IGBTs, thyristors and bipolar transistors in the broader power-electronics hierarchy. Within Infineon's OptiMOS 5 40V platform, this part is optimized for synchronous rectification, low-voltage motor drive and high-current DC-DC conversion where conduction loss dominates thermal budget. Headline specifications from the manufacturer datasheet include a continuous drain current of 31A at TA=25°C rising to 193A at TC=25°C, a pulsed avalanche rating supporting high inrush conditions, gate charge of 67 nC at 10V VGS, and a power dissipation envelope of 3W (TA) and 115W (TC). The 1.7 mΩ RDS(on) at 10V VGS is one of the lowest in the 40V TDSON-8 FL class, enabling reduced conduction loss and higher efficiency in high-current loops. The part is rated for an operating junction temperature of -55°C to +175°C, supporting automotive under-hood and industrial heavy-duty environments. Typical applications targeted by the Infineon design team include 12V-24V brushless DC (BLDC) motor drives, e-bike and power-tool inverters, battery management system (BMS) protection FETs, USB Power Delivery (PD) and high-current hot-swap circuits, synchronous rectification in isolated and non-isolated DC-DC converters, and automotive LED lighting modules. The exposed-die TDSON-8 FL package minimizes package resistance contribution and provides a low thermal resistance path to the PCB copper. For designers, the dominant design consideration is gate-drive voltage: RDS(on) is specified at VGS=10V, but the part also supports 4.5V logic-level drive, with RDS(on) rising roughly 2x at the lower gate voltage. A low-impedance gate driver and adequate VGS decoupling are recommended for high-frequency switching. Compared with planar predecessors, OptiMOS 5 cuts output charge and reverse-recovery charge, simplifying snubber design in half-bridge topologies.
ISC019N08NM7ATMA1 - 80V 1.9mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon ISC019N08NM7ATMA1 is an OptiMOS™ 7 N-channel power MOSFET rated at 80 V with an ultra-low on-resistance of 1.9 mΩ typical at 10 V VGS, housed in a SuperSO8 / PG-TDSON-8-43 surface-mount package. Continuous drain current is 26 A at TA=25 °C and 209 A at TC=25 °C, with power dissipation of 3 W on a 6 cm² FR4 board and 188 W at TC=25 °C. An N-channel power MOSFET is a voltage-controlled majority-carrier switch whose conduction is modulated by the gate-to-source voltage, enabling fast switching and high current density. MOSFETs are the dominant switching element in modern DC-DC converters, motor drivers, and ORing circuits, and Infineon's OptiMOS 7 family is engineered for the next generation of telecom, server, and automotive power systems. The ISC019N08NM7ATMA1 inherits Infineon's latest 80 V platform, offering improved Figure of Merit (RDS(on) × QG) versus prior OptiMOS generations. Key differentiating specifications include RDS(on) of 1.9 mΩ at VGS=10 V, avalanche-rated single-pulse robustness, a thermally enhanced PG-TDSON-8-43 package with exposed pad, and operating junction temperatures up to 175 °C. The 80 V drain-to-source rating gives ample headroom above 48 V telecom and 60 V solar-string rails. The device is fully RoHS compliant and uses halogen-free molding compound per IEC 61249-2-21. Technically, the ISC019N08NM7ATMA1 leverages Infineon's advanced trench cell geometry to minimize both conduction and switching losses, making it well suited for high-frequency synchronous rectification. The SuperSO8 footprint delivers very low parasitic source inductance, which directly improves switching-edge cleanliness and reduces voltage overshoot during hard commutation. Designers benefit from this when operating at 200 kHz+ in LLC and buck-derived topologies. Typical applications include 48 V telecom bus converters, server and data-center intermediate-bus synchronous rectification, solar micro-inverters and DC optimizers, eMobility auxiliary power, and hot-swap / ORing circuits on 48 V backplanes. The 209 A pulsed rating also supports short-duration inrush and fault-clearing events. Compared with planar MOSFETs of the same RDS(on), OptiMOS 7 typically cuts gate charge by 30%, simplifying gate-drive and timing budgets. Design consideration: the SuperSO8 package dissipates most of its heat through the drain tab; use sufficient copper pour (>=6 cm² on FR4) and thermal vias to the opposite layer to realize the full 188 W TC rating. Designers should also keep gate-loop area minimal and place the gate resistor close to the device to prevent parasitic turn-on. This page synthesizes Infineon datasheet values, distributor pricing as of 2026-09-15, and drop-in SuperSO8 alternatives - practical engineering context not found on a single manufacturer datasheet.
ISC024N08NM7ATMA1 - 80V OptiMOS 7 N-Channel MOSFET | Infineon
The Infineon ISC024N08NM7ATMA1 is an 80 V OptiMOS 7 N-channel power MOSFET in a PG-TDSON-8 (SSO8) surface-mount package, rated for 24 A continuous drain current at 25 C ambient (Ta) and 167 A at case temperature (Tc), with maximum on-resistance optimized for low-loss switching. The die delivers 3 W power dissipation at Ta and 150 W at Tc, leveraging Infineon's latest OptiMOS 7 cell architecture to achieve the lowest figure-of-merit in the 80 V class. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert electrical energy in power-electronics systems. N-channel MOSFETs (where the conducting channel carries electrons rather than holes) are preferred in low-voltage, high-current synchronous rectification because of their superior Rds(on) per unit silicon area. Within the broader taxonomy, the ISC024N08NM7 belongs to: power MOSFET -> N-channel MOSFET -> discrete semiconductor -> power-management component. The OptiMOS 7 platform specifically targets high-frequency SMPS, OR-ing, hot-swap, and motor-drive stages where switching losses dominate total losses. Key features include ultra-low typical Rds(on) at 10 V Vgs, a logic-level-compatible gate threshold, fast switching transitions, and integrated gate protection. The PG-TDSON-8 footprint with exposed top-side cooling tab enables direct PCB heatsinking, achieving junction-to-ambient thermal resistance that supports high continuous current without external heat sinks in typical board designs. The OptiMOS 7 technology uses an advanced trench cell and ultra-thin wafer backside processing. This delivers roughly 30% lower Rds(on) and 50% lower gate charge (Qg) than the prior OptiMOS 5 generation, enabling higher switching frequencies and lower conduction losses in 48 V telecom, e-mobility auxiliary, and industrial power-conversion designs. The part is qualified to industrial-grade reliability standards and is halogen-free. Typical applications include synchronous rectification in isolated DC-DC converters (telecom 48 V bus), hot-swap / OR-ing controllers in server power distribution, motor-drive half-bridges for low-voltage brushless DC motors, battery protection circuits in e-bikes and power tools, and USB-PD / high-current Type-C sink stages. The wide safety margin between 80 V Vdss rating and typical 48 V rails ensures robust avalanche tolerance during transients. When designing with this device, keep the gate-drive loop as short as possible to minimize parasitic inductance; the low Qg allows CMOS gate drivers (such as the 1ED020I12B2XUMA1) to switch the device cleanly. Pay attention to the PG-TDSON-8 thermal pad layout - place sufficient vias beneath the exposed pad to maintain rated continuous current. This page synthesizes distributor pricing, drop-in alternatives, and practical PCB layout notes that go beyond the manufacturer's datasheet, helping procurement and design engineers make a faster, more confident decision on the ISC024N08NM7ATMA1.
ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
The Infineon ISC025N08NM5LF2ATMA1 is an 80 V N-channel Linear FET optimized for hot-swap, e-fuse, and battery management applications, featuring an extremely low 2.55 mΩ maximum on-resistance and a wide safe operating area (SOA). Housed in the compact surface-mount PG-TDSON-8 FL package, it delivers 23 A continuous drain current at TA and up to 198 A continuous drain current at TC, with power dissipation of 3 W (TA) and 217 W (TC). The part is rated for 3 W (Ta) and 217 W (Tc) power dissipation, making it suitable for high-current, low-loss switching applications. A Linear FET (also called a logic-level, hot-swap, or SOA-optimized MOSFET) is a specific class of power MOSFET engineered with a larger die area and a wider safe operating area than standard trench MOSFETs, sacrificing some figure-of-merit to gain linear-region robustness. Within the power semiconductor taxonomy, this places the part as: MOSFET -> power MOSFET -> N-channel power MOSFET -> Linear FET (hot-swap class) -> Infineon OptiMOS 5 LF2 family. Linear FETs are widely used in telecom hot-swap controllers, server ORing, and battery protection where transient linear-mode operation occurs during plug-in or fault events. Key features include 96 nC total gate charge, 3.9 V maximum gate-threshold voltage, and a strong 198 A continuous drain current rating that supports high inrush handling. The PG-TDSON-8 FL package offers an exposed thermal pad that drives a low junction-to-case thermal resistance, enabling 217 W power dissipation when mounted on a properly cooled PCB. The device is supplied on a 13-inch tape-and-reel carrier per the ATMA1 ordering code suffix. The ISC025N08NM5LF2ATMA1 uses Infineon's OptiMOS 5 technology platform, which combines a trench-gate structure with field-plate optimization to balance RDS(on), gate charge, and avalanche ruggedness. Compared with conventional 80 V MOSFETs, the LF2 die has roughly 2-3x the active silicon area, which produces the wider SOA, lower RDS(on) of 2.55 mΩ, and a linear-mode operation capability for several milliseconds at high VDS. Typical applications include 48 V telecom hot-swap controllers, server and data-center e-fuse circuits, battery management system (BMS) protection FETs, industrial DC load switches, and power distribution units (PDU) requiring high inrush handling. The wide SOA and 198 A continuous current make it well suited to 12 V/24 V/48 V bus architectures that must tolerate capacitive loads and short-circuit transients without the protection FET entering thermal runaway. When designing with this part, pay close attention to the linear-mode power dissipation envelope - even a few milliseconds of operation in the saturation region can produce hundreds of watts. A gate-source pull-down resistor (typically 10 kΩ) and a controlled gate-drive slew rate are recommended to prevent inadvertent turn-on and to coordinate the SOA profile with the upstream hot-swap controller. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the ISC025N08NM5LF2ATMA1, complementing the manufacturer datasheet with cross-referenced engineering guidance not found in a single source.
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
The Infineon ISC028N03LF2SATMA1 is an N-channel trench MOSFET rated at 30 V VDS with 24 A continuous drain current at TA and 128 A at TC, housed in a surface-mount PG-TDSON-8-62 (5x6 mm) package with an exposed thermal pad. According to verified distributor listings (DigiKey and Mouser), the part delivers a maximum on-resistance of 2.8 mOhm at VGS=10 V and a 2.35 V gate threshold, belonging to Infineon's OptiMOS 5 30V family tuned for synchronous buck, load-switch and ORing applications. The PG-TDSON-8 footprint is a drop-in standard across Infineon's 30V/40V/60V OptiMOS 5 family, simplifying PCB reuse across product variants. An N-channel power MOSFET is a voltage-controlled majority-carrier device that conducts current between drain and source when a gate-source voltage above the threshold is applied. The trench MOSFET architecture places the gate inside a vertical etched channel, increasing channel density per unit silicon area and dramatically lowering on-resistance versus older planar DMOS structures. The part is categorized under discrete semiconductors as a power MOSFET, within the broader hierarchy of discrete semiconductors, transistors, and power switches. Key features include the 2.8 mOhm max RDS(on) at 10 V VGS, 24 A continuous drain current at 25 C ambient, 128 A pulsed capability at case temperature, and 3 W / 83 W power dissipation ratings for TA and TC respectively. The OptiMOS 5 technology also provides low gate charge Qg and low Qrr, minimizing switching losses at high frequency. The lead-free, RoHS-compliant PG-TDSON-8 package uses an exposed drain pad for low thermal resistance, and the device is rated for -55 C to +175 C junction temperature operation. Technical depth: Infineon's OptiMOS 5 30V generation uses a refined trench cell pitch and a thin top-metal layer to reduce both conduction and switching losses. The combination of 2.8 mOhm RDS(on) and low Qg makes this part especially suitable for the low-side switch of a synchronous buck converter at switching frequencies up to 1 MHz, where switching loss would otherwise dominate. The 30V VDS rating provides comfortable margin above 12V rails for transients. Typical applications include DC-DC synchronous rectification in server and telecom POL converters, hot-swap and load-switch circuits in 12V distribution, battery protection in low-voltage Li-ion packs, and high-current USB-PD power paths. Designers also use it as a low-side switch in motor-drive H-bridges under 30V bus operation. The part is well-suited where space-constrained PCB designs require a small footprint with high current density. When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V to achieve the published RDS(on) - 4.5 V Vgs will significantly raise on-resistance and conduction loss. The exposed pad must be soldered to a sufficiently large copper pour (>=1 square inch on top side) to keep junction temperature within the 175 C maximum under worst-case load. Standard ESD precautions apply at the gate. This page synthesizes distributor pricing, drop-in alternative listings, and practical thermal design notes that the manufacturer datasheet alone does not surface, giving procurement and design engineers a single reference for evaluation.
ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
The Infineon ISC030N12NM6ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 6 120 V technology platform, delivering 194 A continuous drain current (Tc) and an ultra-low typical on-resistance of 3.0 mOhm in a PG-TSON-8-3 (SuperSO8 5x6) surface-mount package. The device is rated for VDS of 120 V, supports a gate threshold range compatible with 4.5 V / 10 V standard logic-level drive, and dissipates up to 250 W at Tc = 25 C, making it a strong candidate for high-current synchronous rectification and motor-drive stages. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device where a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. OptiMOS 6 is Infineon's sixth-generation trench MOSFET platform optimized for low FOM (figure of merit), combining low RDS(on) with low Qg/Qrr to minimize both conduction and switching losses in high-frequency SMPS, motor-control, and OR-ing applications. The N-channel variant requires a positive VGS to turn on, and the "NM6" suffix in the part number identifies the family generation. Key features include a maximum RDS(on) of 3.4 mOhm at VGS = 10 V, low Qg typical of OptiMOS 6 for fast switching, and a single N-channel source-down package (PG-TSON-8-3 / SuperSO8 5x6) that exposes the die on the bottom thermal pad for direct PCB cooling. The "030" in the part number indicates the RDS(on) class (3.0 mOhm typical), and the ATMA1 suffix designates tape-and-reel packaging for high-volume assembly. The die uses Infineon's latest trench-cell architecture to balance cell density against ruggedness. Typical applications include high-frequency DC-DC converters (synchronous rectification side), 48 V automotive e-fuse and battery protection, OR-ing and hot-swap controllers, server/telecom point-of-load conversion, and high-current BLDC motor drives. The 120 V rating gives generous headroom over 80 V automotive load-dump transients and 48 V telecom rails. The low Qrr and Qoss figures also make this part attractive for hard- and soft-switched topologies running above 100 kHz. Designers should pay close attention to gate-drive voltage: OptiMOS 6 120 V parts are specified for full RDS(on) at VGS = 10 V. Driving at 4.5 V works but increases on-resistance. The PG-TSON-8-3 footprint requires substantial PCB copper pours (or a thermal via array under the exposed pad) to realize the rated 250 W dissipation. A snubber or gate-resistance tuning is recommended for hard-switched bridges to control dV/dt ringing on the source inductance.
ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon
The Infineon ISC033N03LF2SATMA1 is an N-channel 30 V OptiMOS power MOSFET in a source-down PG-TDSON-8-62 (5x6 mm) surface-mount package, rated for 108 A continuous drain current at case and an extremely low 3.3 mOhm maximum on-resistance at 10 V VGS. It is built on Infineon's advanced OptiMOS trench technology targeting sub-40 V synchronous rectification, OR-ing and hot-swap roles. A power MOSFET is a voltage-controlled semiconductor switch in which applying a gate-source voltage above the threshold (here, typically 2.35 V max) creates a conductive inversion layer between drain and source. N-channel devices such as this one are the workhorses of low-voltage power conversion, sitting in the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> OptiMOS, and they dominate synchronous buck converters, hot-swap controllers, battery protection and load switches because of their very low conduction loss and fast switching speed. The headline electrical specifications are 30 V VDS, 108 A ID at TC, 3.3 mOhm maximum RDS(on) at VGS = 10 V, and 71 W power dissipation at TC. The source-down package forces the source connection to the large thermal pad so heat can be sunk directly into the PCB copper, enabling sustained 108 A operation when the board itself is used as the heatsink. The device is rated for 3 W dissipation in free air, which falls to the PCB copper area in real layouts. Typical applications for this part include synchronous rectification on the secondary side of isolated DC-DC converters, OR-ing FETs in redundant 12 V or 24 V telecom/server rails, hot-swap controllers in plug-in modules, motor-drive low-side switches, and high-current point-of-load converters in servers and datacenters. The very low on-resistance minimises conduction loss at high current, which directly improves efficiency and thermal headroom. When designing with this part, keep the gate-drive loop area as small as possible, source a 10 V gate from a dedicated gate driver, and provide a robust 1 microfarad VDS snubber if the part is used in hard-switched topologies. For very-high-current paths, parallel multiple ISC033N03LF2SATMA1 devices with separate gate resistors to balance dynamic current sharing. This page synthesises distributor pricing, parametric proximity to Infineon same-family parts and cross-brand drop-in candidates, plus practical layout guidance not found in the Infineon datasheet alone.