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LTC4357CMS8#PBF - 80V Ideal Diode ORing Controller | ADI
The Analog Devices LTC4357CMS8#PBF is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode, operating from a 9 V to 80 V input range in an 8-pin MSOP package. It implements low-loss diode-OR and high-current rectification with forward voltage drop limited to 25 mV in regulation, cutting power dissipation, heat, and board area versus Schottky solutions. An ideal diode controller is a power management IC that actively senses the voltage across a MOSFET and controls its gate so the device conducts current in only one direction, emulating a diode with near-zero forward drop. In the power-path hierarchy, the LTC4357 sits between upstream supplies and the load in ORing controllers, hot-swap and power-mux subsystems of distributed power architectures. Key features include the wide 9 V to 80 V operating range with 100 V absolute maximum transient tolerance, a fast 0.5 us response to input voltage reversal that protects the MOSFET during faults, an internal 12 V gate clamp for standard and logic-level FETs, and micropower shutdown. A 3 V to 80 V IN pin monitors the input supply independently, enabling wide-range protection. Architecturally, the device regulates the MOSFET gate to maintain a 25 mV forward drop, smoothly transitioning to full enhancement at light loads. When the input falls below the output, an internal comparator pulls the gate down within microseconds, preventing reverse current. This closed-loop gate control eliminates the oscillation problems common in simpler comparator-based diode controllers. Typical applications include N+1 redundant power supply ORing in servers and telecom rectifiers, -48 V and high-voltage DC power-path protection, solar/battery combiner boxes, and industrial backplane ORing where Schottky conduction losses would otherwise dominate thermal budgets. For design, select a MOSFET whose RDS(on) times expected load current yields an acceptable dissipation; at currents above a few amps, the savings versus a Schottky are dramatic. Layout the SOURCE and GATE traces short and Kelvin-connect the sense elements. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4372HDD - Low Iq Ideal Diode Controller, 8-DFN | Analog Devices
The Analog Devices LTC4372HDD is a low quiescent current ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode in high-voltage ORing applications, housed in an 8-lead DFN (3x3 mm) package with exposed pad. An ideal diode controller is a type of power management IC that uses an active MOSFET + control IC topology in place of a discrete Schottky diode, eliminating forward voltage drop and reducing power dissipation. Ideal diode controllers belong to the broader hierarchy of ORing controllers, which in turn fall under power management ICs. The LTC4372 specifically targets low-Iq applications where the controller itself consumes minimal current from the load when reverse current is blocked. Key features include support for input voltages up to 28V, very low quiescent current, integrated SHDN (shutdown) pin, gate driver for external N-channel MOSFET, fast turn-off to prevent reverse current, and overvoltage protection. The DFN-8 exposed pad package provides low thermal resistance, enabling compact designs where the controller and its companion MOSFET operate with minimal heat generation. The LTC4372 uses a continuous gate pull-up/pull-down architecture that monitors the voltage drop across the MOSFET and adjusts gate drive to regulate forward voltage. This produces a smooth transition from forward conduction to reverse blocking in microseconds, which is significantly faster than discrete Schottky diode reverse recovery. The shutdown pin allows quiescent current to be reduced to microamp levels when the load is disconnected. Typical applications include N+1 redundant power supply ORing, high-side load sharing between battery and adapter, solar bypass diode replacement, automotive reverse polarity protection, and telecom -48V ORing rails where low Iq prevents battery drain. When designing with the LTC4372, pay close attention to MOSFET selection: VDS rating must exceed maximum input voltage, VGS(th) must be compatible with the gate drive voltage, and Qg must allow switching within the controller's specified timing. Adequate input bypass capacitance is required to suppress ringing during load transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing actionable selection guidance for engineers evaluating the LTC4372 against competing ideal diode and ORing controller solutions.
LTC4372IDD - Low Iq Ideal Diode Controller, 8-DFN | Analog Devices
The Analog Devices LTC4372IDD is a positive high-voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode, supplied in an 8-pin DFN (3x3) package with exposed pad. The part operates as an ORing controller with N+1 topology and includes a shutdown (SHDN) pin for low-Iq standby operation. Operating supply current is 5 uA typical, enabling high efficiency for intermittent load applications or always-on backup power systems. An ideal diode controller is a category of power management IC that uses an external MOSFET to emulate a low-forward-voltage diode, dramatically reducing conduction losses compared to discrete Schottky rectifiers in high-current paths. The LTC4372 sits within the broader hierarchy of: ideal diode/ORing controller -> hot-swap controller family -> power management IC -> semiconductor. It controls the forward drop across the MOSFET to ensure smooth current delivery or seamless current transfer between redundant supplies without oscillation. Key features include 5 uA operating quiescent current, support for high positive input voltages (typically up to 28V or higher depending on rating), a fast turn-off path that minimizes reverse-current transients when an input source fails or is shorted, and the ability to control back-to-back N-channel MOSFETs for inrush current limiting and load switching. The SHDN pin enables sub-5 uA standby for battery-powered or energy-harvesting systems. According to the manufacturer datasheet, this low-Iq performance is achieved while still providing sub-microsecond MOSFET gate response. The LTC4372 uses an integrated charge pump to provide the gate drive voltage needed to fully enhance an external N-channel MOSFET, eliminating the need for an external gate supply. This architecture is more efficient than discrete diode bridges because once the MOSFET is fully enhanced, the forward voltage drop is set by Rdson * Iload, which can be tens of millivolts rather than the 300-500 mV of a Schottky diode. The result is dramatically lower conduction loss in high-current applications such as 12V/24V automotive rails or redundant server supplies. Typical applications include N+1 redundant power supply ORing in servers, telecom -48V systems (with appropriate external components), battery backup switching in UPS and energy storage systems, load sharing between solar/battery sources in renewable energy systems, automotive power net (12V/24V) reverse-battery protection, and portable/battery-powered equipment where the 5 uA Iq minimizes sleep current drain. When designing with the LTC4372, the external MOSFET selection is critical: choose a Vds rating of at least 1.5x the maximum system voltage, and gate threshold voltage that is safely below the LTC4372's regulated gate drive voltage. Place the LTC4372 and its sense connections as close to the MOSFET source/body diode as possible to minimize parasitic inductance that could trigger false reverse-current detection. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4372IMS8#TRPBF - 80V Ideal Diode Controller, 8-MSOP | ADI
The Analog Devices LTC4372IMS8#TRPBF is a positive high-voltage, low-quiescent-current ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode in 2.5V to 80V systems, packaged in an 8-lead MSOP (MS-8) with exposed pad. It regulates the MOSFET forward drop to ensure smooth current delivery or current sharing between redundant supplies, providing ORing functionality for N+1 redundant power architectures. An ideal diode controller is a type of power-path protection IC that emulates an ideal (zero forward-voltage) rectifier by controlling an external MOSFET as the pass element. Unlike a discrete Schottky diode that loses 300-500 mV of forward drop, the MOSFET-based ideal diode drops only tens of millivolts, slashing conduction loss by 5-10x. Ideal diode controllers belong to the broader ORing controller family within power management ICs, used to combine multiple supplies, isolate failed rails, and provide hot-swap inrush control in high-availability systems. Key features of the LTC4372 include 2.5V to 80V operating supply range, 2.5V to ground gate-drive capable of driving standard N-channel MOSFETs, 2.5V reverse-input protection, smooth switchover between supplies, and a shutdown pin for low-Iq standby. The controller monitors the MOSFET VDS and modulates gate drive to regulate forward drop at approximately 25 mV, eliminating oscillation and providing linear control across load transients. The MSOP-8 package with exposed pad delivers thermal resistance suitable for the controller's minimal power dissipation. The architecture uses a precision current-sense amplifier and gate-charge pump that operates continuously when VIN exceeds the UVLO threshold of 2.5V. The internal charge pump is regulated to remain above the source by 8V, ensuring gate enhancement even at low VIN. Reverse-current blocking engages within 1 microsecond when VDS becomes negative, protecting upstream rails from back-feed during source-failure or hot-swap events. The SHDN pin forces the controller into a low-Iq state (<5 µA) for battery-powered or energy-conscious applications. Typical applications include N+1 redundant telecom rectifiers (48V), industrial hold-up and ride-through circuits, automotive battery ORing with reverse-polarity protection, server and storage dual-feed power-path switches, and battery stack protection in UPS systems. In high-availability telecom (-48V) rails, two rectifiers feed a common bus through LTC4372-controlled MOSFETs for seamless failover. In 24V industrial systems, two supplies ORed through the LTC4372 support maintenance swap without downtime. When designing with this part, select an N-channel MOSFET whose VDS(max) exceeds the worst-case input voltage and whose RDS(on) gives a regulated forward drop of about 25 mV at full load. A small RC snubber across drain-source can suppress ringing during switchover. Ensure the upstream supply ramps above the 2.5V UVLO before any downstream load activates to avoid undefined behavior. This page synthesizes distributor pricing, pin-compatible alternatives in the same MSOP-8 footprint, application-specific design considerations, and parametric comparison tables that are not available on a single datasheet or distributor listing.
LTC4414EMS8 - 36V Low Loss PowerPath PFET Controller | Analog Devices
The Analog Devices LTC4414EMS8 is a 36V low-loss PowerPath controller for large P-channel MOSFETs, operating from a 3V to 36V supply in an 8-lead MSOP (MSOP-8) package. It drives an external P-channel MOSFET to create a near-ideal diode function for power switchover, ORing two power sources with minimal forward voltage drop and extremely low power consumption. A PowerPath controller is a power management IC that governs the flow of current between multiple power sources (such as a battery and an AC adapter) and a load. Unlike a simple diode-OR arrangement, which wastes power as forward-voltage drop and heat, an ideal-diode controller senses the voltage across an external MOSFET and drives the gate so the device conducts like a diode with milliohm-level resistance. This places the LTC4414 in the ideal-diode ORing controller family within the broader voltage regulator and power management IC hierarchy. Key features include the wide 3V to 36V operating range covering 12V, 24V, and automotive-style battery rails, forward voltage drop as low as 20 mV when conducting (per datasheet forward voltage characteristic), and a status (STAT) output that can drive an auxiliary P-channel switch to connect a secondary source such as an AC wall adapter. A CTL input enables control of the main MOSFET, and an internal current sink pulls CTL low when the pin is left floating, providing deterministic default behavior. Architecturally, the LTC4414 monitors the source-drain voltage of the external PFET and amplifies the gate drive to regulate a small, fixed forward voltage, emulating an ideal diode. This near-zero drop ORing extends battery life, reduces self-heating, and eliminates the need for heatsinking that Schottky diode ORing would require at comparable currents. The 20 microseconds switchover delay parameter ensures rapid source transfer during power fail events. Typical applications include high-current diode-ORing of wall adapters and batteries, low-loss power supply holdup and switchover circuits, automotive and industrial multi-source power distribution, and battery backup systems for servers and networking equipment. When designing, select a P-channel MOSFET with adequate Vgs rating for the 36V maximum input and sufficient Rds(on) so that I-squared-R losses stay within thermal limits. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4414EMS8#PBF - 36V Low Loss PowerPath PFET Controller | Analog Devices
The Analog Devices LTC4414EMS8#PBF is a 36V low loss PowerPath controller for large P-channel MOSFETs, supplied in an 8-lead MSOP package, driving the external PFET gate with 500uA of gate-drive current and achieving a 20us switchover delay for near-ideal diode power ORing. A PowerPath controller, also called an ideal diode controller or ORing controller, is a power management IC that drives an external MOSFET to emulate a diode with near-zero forward voltage drop. In the power-management hierarchy, it sits between raw power sources (wall adapters, batteries, redundant supplies) and the system load switch stage, replacing Schottky diodes that would otherwise waste 0.3V to 0.7V and dissipate significant heat. Key features of the LTC4414 include its wide 3V to 36V operating supply range, which covers 5V, 12V, 24V, and 28V industrial and telecom rails; its low-loss near-ideal diode behavior that maximizes efficiency and extends battery life; and fast switchover (20us typ) that keeps the load powered during source transitions. The controller monitors the forward voltage across the external PFET and regulates the gate to minimize conduction loss, cutting off reverse current flow automatically. Technically, the LTC4414 senses voltage differential between input and output through the external P-channel MOSFET body, amplifies the error, and drives the gate with its internal 500uA gate-drive output. This closed-loop regulation delivers milliohm-class effective forward drop when paired with a large low-RDS(ON) PFET, versus the hundreds of millivolts of a Schottky diode, dramatically reducing self-heating in high-current paths. Typical applications include dual-battery power ORing for extended runtime, wall-adapter-to-battery switchover in portable and industrial equipment, redundant supply (N+1) ORing in telecom and server backplanes, and low-loss load switching on 24V and 36V industrial buses. A key design consideration: the external PFET selection dominates performance - choose RDS(ON) and gate charge to match load current and switchover speed, and ensure the gate-source rating (typically +/-20V) is respected at 36V input. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
LTC4414EMS8TR - 36V Low Loss PowerPath PFET Controller | ADI
The Analog Devices (Linear Technology) LTC4414EMS8TR is a 36V low-loss PowerPath controller that drives an external P-channel MOSFET to create a near-ideal diode function for power switchover, operating from a 3V to 36V supply in an 8-pin MSOP package, guaranteed over 0C to 85C (E grade). An ideal diode controller is a type of power management IC that replaces a conventional rectifier diode with a MOSFET plus control circuit. In the power-supply hierarchy, it sits between raw power sources (wall adapters, batteries, backup supplies) and the system load, performing source ORing. Because a MOSFET conducts with only milliohms of on-resistance instead of a diode's 0.3V to 0.7V forward drop, the controller dramatically reduces conduction loss, self-heating, and the voltage drop that would otherwise steal headroom from downstream regulators. Key features of the LTC4414 include its wide 3V to 36V operating range that covers 5V, 12V, 24V, and 28V industrial rails, its ability to drive large P-channel MOSFETs for multi-ampere power paths, and fast switchover that maintains uninterrupted load power when the primary source fails. Forward voltage across the conducting MOSFET is limited to only tens of millivolts, as illustrated by the forward-voltage characteristic in the manufacturer datasheet, versus hundreds of millivolts for a Schottky alternative. Architecturally, the LTC4414 senses voltage across the external MOSFET and actively drives the gate to regulate forward drop, reverse-blocking when the input falls below the output. External gate clamping protects the PFET within its safe gate-source ratings across the full 36V input span, and the MSOP-8 footprint keeps the controller overhead minimal next to the power FET. Typical applications include highly efficient ORing of multiple power sources for extended battery life, wall-adapter-to-battery switchover in portable and industrial equipment, redundant supply feeding in servers and telecom cards, and automotive/industrial 12V to 28V diode-OR combiner circuits. When designing, size the external PFET for the load current and thermal environment, and keep the sense traces Kelvin-connected to the MOSFET terminals so millivolt-level regulation accuracy is preserved. This page synthesizes distributor pricing, verified drop-in alternatives, design notes, and application guidance not found together in the manufacturer datasheet, with pricing references stated as of 2026-10-19.
LTC4414IMS8 - 36V Low Loss PowerPath PFET Controller | Analog Devices
The Analog Devices LTC4414IMS8 is a 36V low-loss PowerPath controller for large P-channel MOSFETs, housed in an 8-pin MSOP (MS8) package, driving an external PFET to create a near-ideal diode function for power switchover with an industrial -40C to +125C operating range. An ideal-diode ORing controller is a power management IC that regulates the gate of an external MOSFET so the device conducts current in only one direction, replacing lossy Schottky diodes in power-path designs. In the system hierarchy, it sits between raw power sources (batteries, wall adaptors, solar panels) and the load rail, forming the front end of power management IC architectures. The LTC4414 controls the external P-channel MOSFET forward voltage to approximately 20 mV, permitting highly efficient ORing of multiple power sources for extended battery life and low self-heating. Key features include a wide 36V input rating suitable for industrial 24V bus systems, gate-drive control optimized for large P-channel FETs so high current paths have minimal voltage drop, an open-drain STAT output that signals the active source and can drive an auxiliary PFET for wall-adaptor takeover, and a CTL control pin with an internal current sink pulling it low when floating. The internal current sink behavior means a high-level input on CTL forces the STAT pin ON, connecting a second active source such as an AC wall adaptor to the load. Technically, the controller monitors the voltage across the PFET source and drain and adjusts gate drive to servo the forward drop, achieving a near-ideal diode without the 0.3V-0.5V loss of Schottky ORing diodes. At a 5A load path this saves roughly 1.5W to 2.5W of dissipation compared with a Schottky, cutting self-heating and improving efficiency in battery-backed systems. The I-grade device is guaranteed and tested over -40C to +125C per the Analog Devices (Linear Technology) datasheet, while the E-grade variant is specified from 0C to 85C. Typical applications include battery and wall-adaptor power switchover in industrial instrumentation, low-loss ORing of redundant supplies in telecom and networking equipment, and high-current diode-OR front ends for battery backup in automotive and factory systems where the 36V rating provides margin above 24V rails. For design, choose a PFET with adequate VDS margin (at least 40V to 60V for 36V rails) and low RDS(on), and place the controller close to the FET to keep the sensitive sense lines short; gate slew rate is set by the controller, limiting inrush into large load capacitance. This page synthesizes distributor pricing, drop-in alternative analysis, comparison tables, and practical design notes that are not consolidated in the manufacturer datasheet alone. Pricing is as of 2026-10-19 and references the ADI 1ku list price of $2.85.
LTC4414IMS8#PBF - 36V Low Loss PowerPath Controller | Analog Devices
The Analog Devices LTC4414IMS8#PBF is a 36V low-loss PowerPath controller for large P-channel MOSFETs, driving an external PFET to create a near-ideal diode for power switchover, with a typical forward drop of only 20mV when conducting, housed in an 8-pin MSOP (MS8) package. A PowerPath controller, also called an ORing controller or ideal-diode controller, is a power management IC that governs an external pass MOSFET so the switch behaves like a diode with near-zero forward voltage. In the power-management hierarchy, it sits between raw power sources (adapters, batteries, backup supplies) and the point-of-load regulator, replacing Schottky ORing diodes that would otherwise waste watts and generate heat. Key differentiating features include the wide 36V input rating suited to 24V industrial rails, the use of large external P-channel FETs so current handling is limited only by the MOSFET chosen, and the roughly 20mV on-state drop across the FET, which slashes conduction loss versus a 0.3V-0.5V Schottky diode. This permits highly efficient ORing of multiple power sources for extended battery life and low self-heating. Technically, the LTC4414 monitors the voltage across the external MOSFET's sense terminals and servos the gate to steer load current to the lower-loss source, blocking reverse current when a source fails or falls below the backup. The LTC4414E grade is guaranteed from 0C to 85C; the LTC4414I grade in this part number is guaranteed and tested over -40C to 125C, fitting industrial environments. Typical applications include diode-ORing of a 24V adapter with a backup battery, server and telecom board-level supply redundancy, and battery-backup switchover in industrial instrumentation where dropout during source transition is unacceptable. A key design consideration is selecting the external P-channel MOSFET: its on-resistance sets the total drop (20mV is typical at rated current), and its gate rating must tolerate the 36V maximum input range; verify gate-source stress at full Vin. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4414IMS8#TRPBF - 36V Low Loss PowerPath Controller | ADI
The Analog Devices LTC4414IMS8#TRPBF (Linear Technology LTC4414) is a 36V low-loss PowerPath controller for large P-channel MOSFETs, driving an external PFET to create a near-ideal diode function for power switchover, supplied in an 8-pin MSOP package on tape and reel. A PowerPath controller is a type of power management IC that governs how multiple power sources connect to a load, sitting within the broader hierarchy of power management integrated circuits alongside voltage regulators, ORing controllers, and ideal diode controllers. Unlike a simple Schottky diode ORing scheme, a PowerPath controller actively drives the MOSFET gate so the pass element behaves like an ideal diode with millivolt-level forward drop, dramatically reducing conduction loss and self-heating. Key features of the LTC4414 include a wide operating voltage capability up to 36V, control of large P-channel MOSFETs for high-current rails, and highly efficient ORing of multiple power sources for extended battery life and low self-heating, as described on the Analog Devices product page. The LTC4414I grade is guaranteed and tested over the -40C to +125C operating temperature range, while the LTC4414E grade is guaranteed from 0C to 85C. Technically, the controller regulates the MOSFET gate voltage to regulate the forward voltage across the FET, allowing near-ideal diode behavior with fast switchover between sources. This permits highly efficient ORing of battery, wall adapter, or auxiliary supplies without the 0.3V to 0.5V drop of Schottky diodes, which matters greatly at multi-amp load currents where diode loss would be measured in watts. Typical applications include battery backup switchover in industrial instruments, redundant supply ORing in telecom and networking equipment, and automotive or high-voltage auxiliary rail selection up to 36V. When designing with this part, select a P-channel MOSFET whose gate-source voltage rating tolerates the full 36V input span, and verify gate-drive timing against your supply-switchover requirements. This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4416EMS#PBF - 36V Dual PowerPath OR Controller | Analog Devices
The Analog Devices LTC4416EMS#PBF is a 36V low-loss dual PowerPath controller for large P-channel MOSFETs, integrating two interconnected ideal-diode-OR controllers in a 10-pin MSOP (MSOP-10) package. It operates from input voltages of 3.5V to 36V and controls two sets of external P-channel MOSFETs to create two near-ideal diode functions for power switchover circuits. An ideal-diode OR controller is a power management IC that drives external MOSFETs to emulate diode behavior with far lower forward voltage drop than a Schottky diode. In the system hierarchy of power path management (ORing controller -> PowerPath controller -> power management IC), the LTC4416 replaces lossy diode-OR topologies, extending battery life and reducing self-heating in high-current rails. Key features include near-zero forward drop (limited only by MOSFET RDS(ON)), a soft switchover function that transfers between two dissimilar supply voltages without excessive output droop, and a fast-on feature that dramatically increases gate drive current when the forward input falls, minimizing output disturbance during source transitions. Architecturally, the two controllers are interconnected so that the part can perform source selection as well as simple ORing: it can steer load current between two power sources rather than merely sharing it, enabling priority-based power architectures such as auxiliary input takeover of a wall adapter. Typical applications include 12V and 24V industrial supply ORing, high-power PoE and telecom power systems (the LTC4416-1 variant targets large-PFET PoE designs), battery backup switchover, and hot-standby redundant rails in servers and networking equipment. Design consideration: because gate drive is proportional to the applied voltage, verify that the selected P-channel MOSFETs meet both the 36V maximum gate-source rating and the total gate charge the controller must switch during fast-on events. This page synthesizes distributor pricing, same-family drop-in variants, and practical design guidance not found in the manufacturer datasheet. Pricing as of 2026-10-19.
LTC4416EMS-1#PBF - 36V Dual Ideal Diode OR Controller | ADI
The Analog Devices LTC4416EMS-1#PBF is a 36V low-loss dual PowerPath ideal diode controller controlling two sets of external P-channel MOSFETs to create two near-ideal diode functions, operating from 3.5V to 36V input with 35uA per channel quiescent current in a 10-pin MSOP package. An ideal diode controller is a power management IC that drives external MOSFETs to emulate a diode with near-zero forward voltage drop. In the power-supply hierarchy, it sits between raw power sources (adapters, batteries, PoE supplies) and the system load, replacing Schottky diodes in power ORing and source-switchover circuits to eliminate diode conduction losses and the associated heat. Key features include a wide 3.5V to 36V operating range that supports one to eight series Li-Ion cells, a low 35uA per channel quiescent current that is independent of load current, and regulation of the MOSFET forward voltage so conduction loss scales down with load. The LTC4416-1 variant adds fast turn-off of the alternate channel MOSFET when the other device is selected via the enable pins, enabling priority-source switchover behavior. The architecture drives large external P-channel MOSFETs with controlled gate voltage, forward-regulating each channel to a small setpoint voltage. When a source falls below its regulated forward drop, the MOSFET turns off quickly, providing reverse-current blocking without a discrete diode drop. Because the drop is I*Rds(on) rather than a fixed 0.3-0.5V, self-heating and efficiency losses are dramatically reduced at high currents. Typical applications include highly efficient ORing of multiple power sources such as adapter/battery switchover in portable instruments, high-power PoE and telecom power feeds, and backup battery holdup systems. The LTC4416E grade is guaranteed from 0C to 85C; the I grade extends to -40C to 125C. Design consideration: select external P-channel MOSFETs with adequate Vds rating (at least 40V for 36V rails) and low Rds(on), since the controller regulates only the gate drive, not the MOSFET thermal budget. This page synthesizes distributor pricing, drop-in same-family alternatives, pinout guidance, and practical design notes not found in the manufacturer datasheet alone.
LTC4416EMS-1#TRPBF - 36V Dual PowerPath Controller | ADI
The Analog Devices LTC4416EMS-1#TRPBF is a 36V low-loss dual PowerPath controller that drives two sets of external P-channel MOSFETs to create two near-ideal diode functions for power switchover circuits, housed in a 10-pin MSOP (MS10E) package with an operating voltage range up to 36V and 35uA quiescent current per channel. A PowerPath (power-path) controller, also called an ORing controller or ideal diode controller, is a power management IC that replaces discrete power ORing diodes with MOSFET-based switches. In the system hierarchy it sits within power management ICs (PMICs), between hot-swap controllers and load switches. Because a MOSFET conducts with only milliohms of on-resistance instead of the 0.3V to 0.7V forward drop of a silicon diode, power ORing efficiency improves dramatically, self-heating drops, and brownout margin increases. Key features of the LTC4416-1 include a wide operating supply range supporting one to eight Li-Ion cells in series, very low 35uA per-channel quiescent current that is independent of load current, and fast switchover with a 30us off-time delay and 60us on-time delay. The device is designed specifically to drive both large and small QG PFETs, making it a very low loss replacement for power supply ORing diodes in high-current rails. The LTC4416-1 variant enables fast gate pull-down under fault conditions and when the other external P-channel device is selected via the enable pins, giving deterministic switchover behavior versus the standard LTC4416. Gate-drive architecture actively charges and discharges the MOSFET gates, providing controlled forward-voltage regulation and reverse-current blocking without discrete diode losses. Per the Analog Devices datasheet, the E-grade is guaranteed from 0C to 85C, with -40C to 85C performance assured by design and characterization. Typical applications include PoE (Power over Ethernet) powered-equipment power supply ORing, battery and adapter switchover in portable instruments, and redundant-supply ORing in telecom and industrial systems where extended battery life and low self-heating matter. Design consideration: size the external P-channel MOSFET so that its gate-charge is compatible with the LTC4416-1 drive capability, and verify that supply voltage never exceeds the 36V absolute maximum; input TVS protection is recommended on long cable runs such as PoE. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4416IMS#PBF - 36V Dual Ideal Diode Controller | Analog Devices
The Analog Devices LTC4416IMS#PBF is a 36V low-loss dual PowerPath controller that drives two sets of external P-channel MOSFETs to create two near-ideal diode functions, housed in a 10-lead MSOP package and rated over the -40C to +125C industrial temperature range (I grade). An ideal diode controller is a power management IC that regulates the gate of an external MOSFET so the MOSFET behaves like a diode with a very low forward voltage drop, replacing lossy Schottky diodes in power ORing circuits. In the power management hierarchy - power management IC, power path controller, ideal diode controller - these devices sit between multiple power sources and a shared load, automatically steering current from the highest-priority or highest-voltage source while blocking reverse current. Key features include a wide 36V maximum operating voltage suited to 12V, 24V, and Power-over-Ethernet-adjacent high-voltage rails, dual-channel 2:2 source selection for true two-source ORing, and near-zero forward drop operation that dramatically reduces power loss and self-heating compared with diode ORing. Because the forward drop of the external PFET can be milliohms-level, conduction losses fall by an order of magnitude in high-current paths. Technically, the LTC4416 regulates each external P-channel MOSFET gate to maintain a small, controlled forward voltage, forward-biasing the FET when its source is powered and pulling the gate low to block reverse current when the input falls below the output. The LTC4416-1 variant differs only in its priority/switchover behavior, giving designers a choice of arbitration scheme without changing the PCB. Low quiescent operation preserves battery life in portable and backup-power systems. Typical applications include diode-ORing of wall adapters with backup batteries, hot-standby power switchover in telecom and industrial equipment, high-voltage battery backup systems, and redundant supply feeds for PoE or 24V instrumentation rails. When designing, choose external PFETs whose Vds rating and Rds(on) match the rail voltage and load current, and provide adequate gate-charge-driven transition control; the controller does not limit inrush by itself, so series resistance or a downstream hot-swap controller may be needed for large load capacitances. This page synthesizes distributor pricing, verified drop-in alternatives, lifecycle status, and practical design notes not found in the manufacturer datasheet, giving engineers a single citable reference for sourcing and design decisions.
LTC4418CUF#PBF - Dual Priority PowerPath Controller, 40V | ADI
The Analog Devices LTC4418CUF#PBF is a dual-channel prioritized PowerPath controller that connects one of two valid DC power supplies to a common load based on user-defined priority and input validity, housed in a 20-lead 4x4 mm QFN (UF) package. It operates over a 2.5 V to 40 V input range, draws only 26 µA quiescent current, and provides ±1.5 % overvoltage/undervoltage window accuracy for clean switchover between rails. An ORing controller, also known as a PowerPath controller or ideal-diode controller, is a power management IC that uses external P-channel MOSFETs to emulate a low-loss diode between two supplies. It allows redundant or prioritized power sources to share a load without the typical diode forward drop, falling within the broader category of power management ICs and system-level supervisors. The LTC4418 implements two fully independent channels with priority set by pin assignment, giving designers a compact alternative to discrete Schottky ORing solutions. Key features include fast non-overlap switchover that prevents reverse and cross conduction while minimizing output droop, a 6 V gate clamp that protects downstream MOSFETs, and a controlled soft-start that limits inrush current on connection. Open-drain VALID outputs indicate each input has remained within its OV/UV window for the configured validation period, simplifying digital handshake with downstream microcontrollers and PMUs. The combination of wide VIN, low Iq, and small QFN-20 footprint makes the LTC4418 ideal for space-constrained redundant systems. Architecturally, the device combines precision voltage references, comparators, and charge-pump-driven gate drivers for both channels on a single die, achieving parametric parity with larger two-chip solutions. Designers can adjust OV/UV thresholds with simple resistor dividers and program validation time with a single capacitor, retaining design flexibility without external firmware. Typical applications include battery-backed wireless sensor nodes, industrial sensor and PLC backup power systems, asset trackers, and e-call/telematics units that must hand over cleanly from primary supply to backup battery without MCU involvement. The 40 V tolerance also suits 24 V industrial bus systems and solar-charge ORing topologies. When designing, place gate resistors close to the IC and keep source-sense traces short to avoid oscillations; verify the external P-FET body-diode avalanche rating EAS for any unclamped inductive disconnect event. This page consolidates distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
LTC4446EMS8E - 100V Hi-Side/Lo-Side MOSFET Driver | ADI
The Analog Devices LTC4446EMS8E is a high-frequency, high-voltage gate driver that drives two N-channel MOSFETs in a half-bridge configuration with supply voltages up to 100V. Housed in an 8-pin MSOP-EP (Exposed Pad) package, the LTC4446EMS8E delivers 2.5A peak top-gate pull-up current, 1.2 ohm top-gate pull-down resistance, and 0.55 ohm bottom-gate pull-down resistance, with 5ns/8ns rise/fall times driving a 1nF load. A high-side/low-side gate driver is a specialized power-management IC that translates low-power PWM control signals from a controller IC into the high-current drive needed to switch the gate of a power MOSFET. It belongs to the broader category of gate drivers (a subclass of PMIC > power management IC > semiconductor). The LTC4446 family uses a bootstrap supply architecture to generate the floating high-side rail, enabling it to switch the upper MOSFET in a half-bridge up to 100V above ground. Key features include bootstrap supply voltage up to 114V, integrated adaptive shoot-through protection, undervoltage lockout (UVLO) on both VCC and bootstrap supplies, and TTL/CMOS-compatible input logic. The exposed pad on the MSOP-EP package provides a low thermal resistance path, supporting reliable operation at high switching frequencies (the Analog Devices datasheet specifies capability up to several hundred kHz). Technically, the LTC4446 uses a separate driver channel for high-side and low-side outputs with independent pull-up/pull-down structures. The internal charge pump and bootstrap diode maintain the high-side supply voltage across the switching cycle, while adaptive dead-time control prevents cross-conduction. This architecture minimizes switching losses in high-capacitance MOSFETs typical of telecom, industrial, and automotive power conversion. Typical applications include DC/DC converters with input voltages up to 100V, motor drivers, telecom power supplies, and high-current synchronous buck or boost converters where fast switching transitions minimize switching losses in high-Cgs MOSFETs. When designing with the LTC4446, ensure the bootstrap capacitor value is sized for the switching frequency and MOSFET gate charge, and that the exposed pad is soldered to a sufficient copper pour for thermal dissipation. Proper layout of the high-side switching loop minimizes voltage overshoot and EMI. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the LTC4446EMS8E that are not consolidated on the manufacturer product page.
LTC4446EMS8E#TRPBF - 100V High-Speed Half-Bridge Gate Driver | ADI
The Analog Devices LTC4446EMS8E#TRPBF is a high-frequency, high-voltage half-bridge gate driver that drives two N-channel MOSFETs in a DC/DC converter with supply voltages up to 100V. Packaged in an 8-pin MSOP-EP (exposed pad), it delivers 2.5A peak source current and 3A peak sink current on its top gate driver, dramatically reducing switching losses in MOSFETs with high gate capacitance. The non-inverting logic interface operates from a 7.2V to 13.5V driver supply and tolerates ground-referenced inputs down to -8V on the high-side gate return. A half-bridge gate driver is a power-management semiconductor in the MOSFET driver family, hierarchically: gate driver -> power management IC -> semiconductor. Its role is to translate low-current PWM logic signals from a controller IC into the high-current, high-voltage drive required to switch power MOSFETs in switching converters. By providing strong source/sink currents with short propagation delays, gate drivers minimize transition losses in the MOSFETs and enable higher switching frequencies, which in turn shrinks magnetics in the surrounding DC/DC converter. Key features of the LTC4446EMS8E#TRPBF include a 22ns typical propagation delay, a separate top-side and bottom-side output structure, built-in bootstrap refresh for the high-side rail, and tolerance of high-side gate-return swings up to the 100V supply rail. The exposed pad on the MSOP-EP package provides a low thermal-resistance path (~40 C/W theta_JA on a standard 4-layer board) so the driver can sustain the high di/dt switching transitions without overheating. The device also integrates adaptive shoot-through protection logic to prevent cross-conduction in the half-bridge. In a typical buck or boost converter the LTC4446 sits between the controller IC and the two power MOSFETs; its TG/BG pins drive the high-side and low-side FET gates while a single bootstrap capacitor on the BST pin powers the floating high-side rail. Compared with discrete gate-drive solutions built from logic buffers and level shifters, the integrated LTC4446 saves board area, reduces parasitic inductance in the gate loop, and improves converter efficiency by enabling cleaner switching edges. The industrial -40C to +125C operating temperature range suits automotive, telecom, and industrial power systems. Typical applications for the LTC4446 include telecom 48V point-of-load converters, industrial motor drivers, high-voltage synchronous buck regulators, and isolated DC/DC transformer drivers where a half-bridge topology is required. When designing with this part, place the bootstrap capacitor as close as possible to the BST and TG pins and use a low-ESR ceramic; route the high-side gate-return (SW) trace directly above the high-side MOSFET drain connection to minimize parasitic inductance that can cause ringing on the gate waveform.
LTC6811HG-1 - 12-Cell Battery Monitor with isoSPI | ADI
The Analog Devices LTC6811HG-1#PBF is a 12-channel multicell battery stack monitor housed in a 48-lead SSOP (G) package, designed to measure cell voltages in series-connected battery packs. The device performs 16-bit delta-sigma analog-to-digital conversions on up to 12 series-connected cells with total measurement error below 1.2 mV, supports daisy-chain isolation via the isoSPI two-wire interface, and operates directly from the battery stack. The 'H' temperature grade variant is rated from -40C to +125C and the '-1 G designation selects daisy-chain SPI communication for multi-device stacks. What is a multicell battery monitor? It is a mixed-signal analog front-end (AFE) integrated circuit that measures individual cell voltages in a series battery stack, performs balancing decisions, and reports state-of-charge data to a host controller. Battery monitors belong to the broader category of battery management ICs (BMICs), which sit within the power management semiconductor hierarchy. Modern electric-vehicle and grid-storage battery packs require per-cell monitoring for safety, balancing, and capacity tracking - a task that discrete ADCs cannot reliably perform because of high common-mode voltages, ground-shift hazards, and noise-coupling issues that arise across many cells in series. Key features include 12 cell-voltage measurement channels plus two auxiliary ADC inputs, a built-in 5V LDO regulator for internal biasing, programmable passive cell-balancing outputs (S1-S12), passive or active balancing modes, and an on-chip digital filter for noise rejection. The isoSPI interface provides transformer-isolated communication up to 1 Mbit/s over a single twisted pair, eliminating costly digital isolators in stack-to-host links. The IC supports both PCB-trace and discrete-transformer isolation. Architecturally, the LTC6811 uses a fourth-generation silicon-on-insulator (SOI) high-voltage CMOS process that tolerates common-mode voltages up to 75V per cell and up to several hundred volts across the stack. The integrated delta-sigma modulator provides simultaneous 50 Hz to 5 kHz noise rejection, allowing accurate measurements even in the presence of switching-converter EMI from chargers and inverters. Typical applications include hybrid and pure electric vehicle battery management, grid-tied energy storage systems (ESS), uninterruptible power supplies (UPS), e-mobility scooters and bicycles, telecom 48V battery backup, and large-format lithium-ion or LiFePO4 battery packs. The wide common-mode range and isolated daisy-chain interface make the LTC6811-1 particularly suited to high-voltage (>400V) packs where multiple devices must be chained without PCB ground noise coupling. When designing with the LTC6811-1, carefully size the cell-input RC filters (typically 100 ohm / 10 nF) to balance noise rejection against measurement settling time, and provide adequate thermal copper for the SSOP exposed pad. Use the LTC6811-2 (parallel SPI variant) only for low-channel-count systems where daisy-chain latency would be unacceptable. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes - including pinout, pinout diagram and reference designs - that complement the manufacturer datasheet for fast engineering decision-making.
LTC6811IG-1 - 12-Cell Battery Stack Monitor, isoSPI, 48-SSOP | Analog Devices
The Analog Devices LTC6811IG-1 (LTC6811IG-1#PBF) is a 12-channel multicell battery stack monitor IC housed in a 48-pin SSOP (IG) package with exposed pad, designed for high-voltage battery management systems in electric vehicles, energy storage, and industrial backup. It measures up to 12 series-connected battery cells with a total measurement error below 1.2 mV and supports input common-mode voltages up to 5V per cell, allowing the part to be powered directly from the battery stack. The device integrates a daisy-chain isoSPI interface for galvanically isolated communication, with a single twisted pair carrying data and clock across up to 1000V of stack voltage. A battery monitor IC (also called a multicell battery monitor or cell monitor) is an analog front-end that digitizes the voltage of every cell in a series stack, performs balance-current control, and reports measurements to a host MCU through a digital interface. Battery monitors sit inside the Battery Management System (BMS) hierarchy, alongside cell-balancing ICs and supervisors, and are essential for safety, state-of-charge estimation, and state-of-health tracking in Li-ion, LiFePO4, lead-acid, and supercapacitor packs. Key features of the LTC6811IG-1 include a 12-bit ADC with <1.2 mV total measurement error, onboard passive cell balancing with PWM duty-cycle control per channel, an integrated 5V LDO for housekeeping supply, five general-purpose I/O lines, and a low-power sleep mode that drops quiescent current to 6 µA. Generation-4 silicon also adds improved EMI immunity and faster isoSPI data rates (up to 1 Mbps) over previous-generation LTC6804 parts. The 48-SSOP package with exposed pad offers theta_JA around 40 C/W, suitable for moderate ambient temperatures with a small copper pour. Typical applications include electric-vehicle battery packs (400V and 800V architectures), grid-tied energy-storage systems, telecom backup battery racks, e-mobility scooters and e-bikes, solar battery storage banks, and industrial UPS stacks. The daisy-chain interface means a single BMS host processor can monitor hundreds of cells by chaining multiple LTC6811-1 devices up and down the stack. When designing with this part, always add adequate TVS protection on the cell inputs and provide a low-impedance Kelvin connection at each cell tap to preserve the 1.2 mV accuracy. Use a 10 µF decoupling cap on V+ and place the isoSPI transformer within 50 mm of the LTC6811 pins to meet the 1 Mbps spec.
LTC6811IG-1#3ZZTRPBF - 12-Ch Multicell Battery Monitor | ADI
The Analog Devices LTC6811IG-1#3ZZTRPBF is a 12-channel multicell battery stack monitor IC housed in a 48-pin SSOP (208-mil) package. It measures up to 12 series-connected battery cells with a total measurement error of less than 1.2 mV and supports battery stacks from 11 V to 55 V. The device provides built-in isoSPI daisy-chain interface for high-noise-immune isolated communication. A multicell battery monitor IC is a precision analog front-end that samples the cell voltages of every series cell in a high-voltage battery pack and reports them to a host controller via an isolated serial link. The LTC6811 belongs to the battery management IC (BMIC) product family, which sits hierarchically under power management ICs and is essential for state-of-charge, state-of-health, and cell-balancing functions in lithium-ion battery packs. Key features of the LTC6811IG-1 include 12-bit or 16-bit ADC resolution, sub-1.2 mV total measurement error, a passive cell-balancing driver per channel, a 5 mA typical quiescent current in standby, and on-chip isoSPI for isolated 2-wire daisy-chain data transfer. The -1 suffix denotes the daisy-chain (isoSPI) variant versus the parallel-addressed -2 version. Operating temperature spans -40 C to +85 C for the industrial-grade IG package. Architecturally, the LTC6811 uses a sigma-delta ADC per cell with a precision bandgap reference and on-chip filtering, providing high rejection of common-mode stack noise. The on-board isoSPI transceiver operates at up to 1 Mbps across an isolation barrier using only a twisted pair plus transformer, eliminating the need for an external isolator and CAN/LIN transceivers in many systems. Typical applications include electric-vehicle battery management systems, industrial lithium-ion backup battery monitoring, grid-scale energy storage, e-mobility scooters and bikes, and uninterruptible power supplies. The wide 11 V to 55 V common-mode input range accommodates 8-series to 14-series cell packs directly without additional front-end protection. When designing, ensure the isoSPI cable uses the recommended twisted pair with characteristic impedance near 100 ohm and that a 10 nF bypass capacitor is placed within 5 mm of each supply pin. Note that the LTC6811-1 is pin-compatible and software-compatible with the older LTC6804, simplifying legacy upgrades. This page synthesizes real-time distributor pricing, parametric drop-in alternatives, and design guidance that goes beyond the manufacturer datasheet alone, with all figures verified against DigiKey, Mouser, and the Analog Devices product page as of 2026-10-09.
LTC6811IG-1#TRPBF - 12-Cell Battery Monitor | Analog Devices
The Analog Devices LTC6811IG-1#TRPBF is a 12-channel multicell battery stack monitor that measures up to 12 series-connected battery cells with a total measurement error of less than 1.2 mV, housed in a 48-pin SSOP package with a daisy-chain communication interface (Generation 4). According to the Analog Devices LTC6811-1 product page, the device operates over an 11 V to 55 V input voltage range and integrates cell-balancing MOSFET drivers rated for cell balancing up to [DATA_NEEDED: balancing current rating]. A multicell battery monitor is a specialized analog/mixed-signal IC used in Battery Management Systems (BMS) for high-voltage lithium-ion battery stacks. It sits between individual battery cells and the host microcontroller, providing per-cell voltage, temperature, and diagnostics. Within the broader product taxonomy, the LTC6811IG-1 is a battery monitor IC, a sub-category of battery management, which in turn belongs to power management ICs and finally the integrated circuit family. The "Generation 4" designation refers to Analog Devices' fourth-generation cell monitoring architecture, providing improved noise immunity and timing margins over earlier generations. Key features include a 1.2 mV maximum total measurement error across the full -40°C to +125°C operating range, 290 µs ADC conversion time for all 12 cells, an isoSPI or SPI-compatible isolated daisy-chain interface, on-board passive cell balancing, and built-in self-test diagnostics. The 48-SSOP package enables compact BMS layouts while the daisy-chain architecture allows multiple LTC6811-1 devices to be stacked for systems up to hundreds of cells using only one host processor connection. The LTC6811IG-1 uses a precision 16-bit sigma-delta ADC per cell with a programmable noise filter and a dedicated bandgap reference. It can be powered directly from the stack it monitors (11 V to 55 V) or from an isolated supply, eliminating external power conversion. The daisy-chain interface uses a differential, capacitively or transformatively isolated link that supports cable lengths up to 100 m. Typical applications include electric vehicle battery packs, grid-scale energy storage systems, uninterruptible power supplies (UPS), telecom backup battery banks, industrial forklift and e-mobility battery packs, and renewable energy storage systems. The wide input range and high-accuracy measurements make it particularly well-suited for Li-ion, LiFePO4, and lead-acid chemistries in series-stacked configurations. When designing with this device, allocate PCB area for the isoSPI transformer or capacitor isolation barrier, provide sufficient decoupling at the V+ and V- pins, and follow Analog Devices' reference layout guidelines for thermal management of the SSOP exposed pad. Daisy-chain timing budgets must account for cumulative propagation delay when stacking more than four devices. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on any single distributor product page, including cross-brand equivalents and a side-by-side comparison of same-package BMS monitor alternatives.
LTC6812HLWE-1#3ZZTRPBF - 15-Cell Battery Stack Monitor | Analog Devices
The Analog Devices LTC6812HLWE-1#3ZZTRPBF is a multicell battery stack monitor IC for 1-to-15 series-connected cells, packaged in a 64-lead LQFP-EP (10x10 mm) and qualified across an extended automotive temperature range of -40C to +125C. A battery monitor (or analog front end for battery management) is an IC that continuously measures individual cell voltages in a stacked battery pack and reports them via a digital interface to a host MCU. Within the broader taxonomy, the LTC6812 family sits under Battery Management ICs -> Power Management ICs -> Mixed-Signal Semiconductors. The device provides built-in passive cell balancing with individual PWM duty-cycle control per cell, plus an onboard 5V regulator and nine general-purpose I/O lines. Sleep mode current is reduced to 6 uA for quiescent storage conditions. Key features include measurement accuracy better than 1.8 mV per cell with a 16-bit delta-sigma ADC, a 290 us conversion time for all 15 cells, an isolated isoSPI daisy-chain communication interface (10 Mbps), and ±3 kV HBM ESD tolerance on the C pins. A built-in self-test and watchdog further reduce firmware overhead. The 64-lead eLQFP package exposes a thermal pad to keep junction temperature in spec during high-charge balancing events. The architecture combines a precision analog front end with a robust digital isolator section; the isoSPI link uses a single twisted pair and can extend up to 100 m, allowing centralized monitoring of long battery strings. Built-in passive balancing resistors per channel simplify layout, and the part is AEC-Q100 qualified for hybrid/electric vehicle traction packs. Typical applications include EV/HEV traction battery monitoring, industrial backup lithium battery stacks, grid-tied energy storage systems (BESS), e-scooter and e-bike battery packs, and telecom 48V battery modules. Designers value the part for its high channel count per IC and daisy-chain scalability that lets many LTC6812-1 devices be stacked in series for 1000 V+ packs. When designing with the LTC6812HLWE-1#3ZZTRPBF, use a robust input RC filter on every cell input to reject current-sense noise, observe the V+/VREG decoupling guidance in the datasheet, and validate isoSPI timing with the ADI evaluation kit. The #3ZZTRPBF suffix indicates tape-and-reel packaging for high-volume assembly. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving a faster engineering decision path for designers choosing an AEC-Q100-qualified multicell monitor.
LTC6812ILWE-1#3ZZPBF - 15-Cell Battery Stack Monitor | ADI
The Analog Devices LTC6812ILWE-1#3ZZPBF is a 15-cell multicell battery stack monitor IC housed in a 64-pin LQFP-EP (10x10 mm) package, designed for high-accuracy monitoring of large lithium-ion and multi-chemistry battery packs. The device supports direct measurement of up to 15 series-connected battery cells with a total stack voltage up to 49.5 V and can be powered either directly from the battery stack or from an isolated supply via its V+ and VREG pins. A multicell battery monitor (also called a battery stack monitor or cell monitor) is a specialized analog front-end IC that continuously samples the voltage of every cell in a series-connected battery pack. It sits between raw cell taps and a host MCU/BMS controller, providing digitized cell voltages over an isolated serial link. In the power management hierarchy, it belongs to battery management -> battery monitoring -> analog front-end -> power management IC -> semiconductor. Multicell monitors are essential in any battery system where individual cell state-of-charge must be known to balance cells and prevent over-charge/over-discharge damage. Key features of the LTC6812-1 include passive cell balancing with individual PWM duty cycle control per cell, a 16-bit sigma-delta ADC with <2.2 mV total measurement error, an onboard 5 V regulator to power external circuitry, nine general-purpose I/O lines (GPIO), and a low-power sleep mode drawing only 6 µA. Communication with the host is performed over a 2-wire isolated serial interface (isoSPI) that supports daisy-chain connection of multiple LTC6812-1 devices for stacks exceeding 15 cells. The LTC6812-1 uses a precision sigma-delta ADC architecture per channel with on-chip reference and calibration, achieving high noise-immunity in the noisy environment typical of EV and energy-storage inverters. The isoSPI physical layer provides galvanic isolation up to 100 m of cable length, eliminating expensive digital isolators on every cell-tap wire. Typical applications include electric vehicle (EV) battery management systems, grid-scale energy storage systems (ESS), uninterruptible power supplies (UPS), telecom backup battery racks, e-mobility (e-bike, e-scooter) packs, and any high-cell-count Li-ion or LiFePO4 system requiring per-cell voltage monitoring and passive balancing. When designing with this part, plan cell-balancing resistors around the per-cell PWM duty cycle and the desired balance current (typically tens of mA). The isoSPI daisy-chain must be terminated correctly at both ends; refer to the DC2350A demo board for the recommended transformer and capacitor network. The LTC6812ILWE-1 (industrial -40 to +85 °C) is the standard grade; use LTC6812HLWE-1 (high-temperature -40 to +125 °C) for under-hood automotive or harsh-environment designs. This page synthesizes distributor pricing, application-specific design notes, and verified drop-in alternatives that are not aggregated on any single distributor or manufacturer page.
LTC6813HLWE - 18-Cell Battery Stack Monitor, AEC-Q100 | ADI
The Analog Devices LTC6813HLWE is a high-temperature-grade, AEC-Q100-qualified 18-cell battery stack monitor IC housed in a 64-lead plastic eLQFP (LWE) 10x10 mm package with exposed pad. It measures up to 18 series-connected battery cells with a total measurement error below 2.2 mV and supports cell voltages up to 5 V per channel, using a 16-bit delta-sigma ADC core with built-in isoSPI daisy-chain interface. A battery stack monitor is a mixed-signal IC that performs high-accuracy cell voltage, temperature, and current (via an external shunt) acquisition across long strings of series-stacked cells in Battery Management Systems (BMS). It belongs to the broader category of battery management ICs, which in turn sit under power management semiconductors. The LTC6813 family is the industry-standard cell monitor for mid- and high-voltage Li-ion packs in electric vehicles, stationary energy storage, and industrial backup systems. Key features of this part include per-cell 2.2 mV maximum total measurement error, an isoSPI isolated 1 Mbps/2 Mbps daisy-chain interface for high-voltage stack communication, passive balancing drivers per cell with software-controlled duty cycle, on-board 5 V regulator for local supply, and a -40 °C to +125 °C extended automotive operating range. Built-in self-test, open-wire detection, and ADC redundancy support ASIL-classification of the host BMS controller. Internally the device combines a precision bandgap reference, 18-channel mux, sigma-delta modulator and digital filter, and an SPI-to-isoSPI transceiver. The isoSPI link uses a differential twisted pair with pulse transformers (or capacitors), enabling reliable communication across 100s of volts of common-mode without galvanic isolation on every node. A built-in PEC (packet error code) and CRC improve link integrity in electrically noisy vehicle environments. Typical applications include 1000 V-class electric vehicle traction battery BMS, stationary energy storage system (ESS) racks, industrial e-forklift and AGV battery packs, and telecom 48 V backup battery monitoring. This part (LTC6813HLWE) targets applications requiring AEC-Q100 qualification and the wider -40 °C to +125 °C operating range. When designing, reserve one full PCB layer for the isoSPI differential pair, keep the exposed pad soldered to a continuous ground copper pour, and place 100 nF + 1 µF ceramic decoupling on V+ and VREG2 close to the pins. Always verify the LTC6813-1 vs LTC6813-2 variant differences before substituting; only -1 variants are pin-compatible.