1ED3124MC12HXUMA1 vs 1ED3142MU12FXUMA1 对比

详细并排对比 1ED3124MC12HXUMA1 出自 Infineon 和 1ED3142MU12FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中

规格对比

参数 1ED3124MC12HXUMA1 1ED3142MU12FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.45 $0.94
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
输出数量 1 —
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) Coreless Transformer (CT)
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
上升时间 15 ns —
下降时间 30 ns —
工作温度 -40 C to +125 C —
封装 PG-DSO-8 (DSO-8) PG-DSO-8-72 (wide-body DSO-8)
安装类型 Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
RoHS 状态 Compliant Compliant
Product Type — Galvanically Isolated Gate Driver IC
Number of Channels — 1
Peak Source/Sink Output Current — 6.5 A (typical)
Isolation Voltage (DigiKey rating) — 3000 Vrms
Isolation Voltage (Manufacturer datasheet) — 2300 V
Output Supply Voltage (VCC2-VEE2) — [DATA_NEEDED: max value, typical datasheet 25 V max]
Input Supply Voltage (VCC1) — [DATA_NEEDED: value]
Propagation Delay (typical) — 42 ns
Target Power Switches — SiC MOSFETs, IGBTs, MOSFETs
工作温度范围 — [DATA_NEEDED: junction/ambient range]
Protection Features — UVLO (output-side), DESAT short-circuit detection
Output Stage — Separate source/sink pins, totem-pole
Family — Infineon EiceDRIVER 1ED31xx

数据手册与资源

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