1EDB8275FXUMA1 vs 1EDI20N12AFXUMA1 对比

详细并排对比 1EDB8275FXUMA1 出自 Infineon 和 1EDI20N12AFXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDB8275FXUMA1 1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon

1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon

1EDB8275FXUMA1 ✓ 量产中

规格对比

参数 1EDB8275FXUMA1 1EDI20N12AFXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.72 $1.45
功能 Single-channel isolated gate driver —
Number of Channels 1 1
Isolation Type Magnetic coupling (coreless transformer) Galvanic (coreless transformer), reinforced
Isolation Voltage (Vrms) 3000 Vrms —
Peak Source Current (typ.) 5.4 A —
Peak Sink Current (typ.) 9.8 A —
CMTI (min.) 300 V/ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] —
Output-side Supply Voltage Up to 40 V (per datasheet family) —
Input-side Supply Voltage [DATA_NEEDED: VCC input range] —
UVLO Yes (input and output side) —
Miller Clamp Available in family —
封装 PG-DSO-8 (150 mil wide-body) PG-DSO-8-51 (DSO-8, 8-pin, narrow body)
工作温度范围 -40 C to +125 C (industrial) -40 °C to +125 °C
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant —
Driver Configuration — Single high-side, isolated
Maximum Supply Voltage (Output Side) — 17 V
Minimum Supply Voltage (Output Side) — 3.1 V
Peak Source Current — 4.0 A (typical)
Peak Sink Current — 3.5 A (typical)
Working Voltage (Isolation) — 1200 V (high-side rail reference)
Propagation Delay — 120 ns (typical)
输出配置 — Separate source and sink pins
Short-Circuit Clamping — Yes (built-in)
MSL 等级 — 2 (per JEDEC J-STD-020)
RoHS Compliance — Compliant
Lead-Free — Yes

数据手册与资源

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