1N5711 vs 1N5711UR-1 对比
详细并排对比 1N5711 出自 STMicroelectronics 和 1N5711UR-1 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1N5711 | 1N5711UR-1 |
|---|---|---|
| 品牌 | STMicroelectronics | Microchip Technology |
| 分类 | Diodes | Diodes |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.18 | $0.00 |
| Diode Type | Small-signal Schottky barrier (RF) diode | Schottky barrier diode |
| Peak Reverse Voltage (VRRM) | 70 V | — |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | — |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | — |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | — |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| 封装 | DO-35 (DO-204AH) hermetic axial-lead glass | DO-213AA (MELF / SOD-80 / LL34), hermetically sealed glass |
| 安装类型 | Through-Hole | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Reverse Voltage (Vr) | — | 50 V |
| Average Forward Current | — | 33 mA |
| Configuration | — | Single diode |
| Construction | — | Metallurgically bonded |
| Qualification Grade | — | Military grade (1N prefix, high reliability) |
| Terminal Finish | — | Tin/lead plated or RoHS-compliant matte tin over copper-clad steel (commercial grade) |
| Solderability | — | MIL-STD-750 method 2026 |
| Family Members | — | 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL equivalents |
| Forward Voltage (Vf) | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Current (Ir) | — | [DATA_NEEDED: reverse leakage current] |
| Junction Capacitance | — | [DATA_NEEDED: junction capacitance] |