2ED21064S06JXUMA1 vs 1EDN7136UXTSA1 对比

详细并排对比 2ED21064S06JXUMA1 出自 Infineon 和 1EDN7136UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ 量产中

规格对比

参数 2ED21064S06JXUMA1 1EDN7136UXTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.85 $0.74
功能 High-Side and Low-Side Gate Driver High-side / Low-side gate driver IC
Configuration Half-Bridge (2 outputs, non-inverting) —
拓扑 High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated —
Input Logic Compatibility 3.3 V / 5 V CMOS —
工作温度 -40C to +125C —
封装 PG-DSO-14 (14-pin SOIC) TSNP-6 with exposed pad (PG-VSON-1)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
RoHS 状态 ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Driven Device Type — GaN HEMT, N-channel MOSFET
输出数量 — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
工作温度范围 — -40 C to +150 C
Lead-Free — Yes
无卤 — Yes (per Infineon product family convention)

数据手册与资源

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