2ED2738S01GXTMA1 vs 1ED3122MC12HXUMA1 对比

详细并排对比 2ED2738S01GXTMA1 出自 Infineon 和 1ED3122MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2738S01GXTMA1 2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 ✓ 量产中
Infineon
1ED3122MC12HXUMA1 1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 ✓ 量产中

规格对比

参数 2ED2738S01GXTMA1 1ED3122MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $1.92
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Output Current (Source, peak) 4.0 A —
Output Current (Sink, peak) 8.0 A —
Output Current (Source, typ) 1.0 A —
Output Current (Sink, typ) 2.0 A —
输出数量 1 —
Input Type Non-Inverting —
Input Logic Compatibility TTL —
Supply Voltage (VDD/VCC) 6 V to 20 V —
Bootstrap Supply Voltage Up to 600 V (HS pin rating) —
Propagation Delay (typ) 120 ns —
Channel-to-Channel Match 40 ns —
Rise/Fall Time (1 nF load) 1.5 ns / 1.5 ns —
Negative Transient Immunity (HS) -10 V to +20 V transient —
Under-Voltage Lockout VCC and Bootstrap —
Bootstrap Diode Integrated —
工作温度 -40C to +125C -40 C to +125 C
封装 PG-VSON-10-5 (3x3 mm) with EP PG-DSO-8-66 (300-mil DSO-8)
安装类型 Surface Mount Surface Mount
MSL 等级 2 (1 year) 2
RoHS 状态 Compliant Compliant
Product Type — Isolated Gate Driver (single-channel)
Isolation Technology — Coreless Transformer (CT)
Isolation Voltage (Vrms) — 5.7 kVrms
Maximum Transient Isolation (Vpk) — 8 kVpk
Output Current (source / sink) — 10 A / 9 A
Configuration — High-side, non-inverting
Number of Channels — 1
Supply Voltage (VCC / VBS) — 8 V to 35 V
Propagation Delay (typ.) — 30 ns
Rise Time / Fall Time (typ.) — 15 ns / 30 ns
Miller Clamp — Active (integrated)
Short-Circuit Clamping — Yes
UVLO — Primary and secondary side

数据手册与资源

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