AT21CS01-STUM10-T vs AT21CS01-STUM16-T 对比
详细并排对比 AT21CS01-STUM10-T 出自 Microchip Technology 和 AT21CS01-STUM16-T 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Microchip Technology
AT21CS01-STUM10-T - 1Kb Single-Wire EEPROM, SOT-23-3 | Microchip
AT21CS01-STUM10-T ✓ 量产中Microchip Technology
AT21CS01-STUM16-T - 1Kb Single-Wire EEPROM, SOT-23-3 | Microchip
AT21CS01-STUM16-T ✓ 量产中规格对比
| 参数 | AT21CS01-STUM10-T | AT21CS01-STUM16-T |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 分类 | EEPROM | EEPROM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.26 | $0.48 |
| 存储器类型 | EEPROM (Non-Volatile) | Single-Wire EEPROM (SEEPROM) |
| 存储容量 | 1 Kbit (128 x 8) | — |
| 存储组织 | 128 x 8 | — |
| 接口 | Single-Wire (I2C-compatible protocol structure) | Single Wire (UNI/O), compatible with I2C-style framing |
| Serial Number | Factory-programmed 64-bit unique ID | — |
| Clock Frequency (Standard Mode) | 15.4 kbps | — |
| Clock Frequency (High Speed) | 125 kbps | — |
| 电源电压 | 1.7 V to 3.6 V | — |
| Write Cycle Time (Word/Page) | 5 ms max (self-timed) | — |
| Write Endurance | >1,000,000 cycles per location | >1,000,000 cycles per memory location |
| 工作温度 | -40 C to +85 C (Industrial) | -40 C to +85 C (industrial) |
| 封装 | SOT-23-3 (TO-236-3 / SC-59) | SOT-23-3 (3-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 3 | — |
| RoHS 状态 | Compliant | Compliant |
| Pin Configuration | SI/O (data + parasitic power), GND, NC | — |
| Memory Density | — | 1 Kbit (128 x 8) |
| Clock Frequency (Max) | — | 125 kHz (high-speed mode) |
| Standard-Speed Mode | — | 15.4 kbps |
| Operating Voltage | — | 1.7 V to 3.6 V (SI/O pull-up) |
| Write Cycle Time (Max) | — | 5 ms |
| Data Retention | — | [DATA_NEEDED: data retention years] |
| Unique Serial Number | — | 64-bit, factory-programmed, read-only |
| Security Register | — | 256-bit (64-bit unique ID + 128-bit user-programmable + 64-bit reserved) |
| MSL 等级 | — | 1 |
| Lead-Free | — | Yes |
| Manufacturer | — | Microchip Technology |