ATSAMG55J19A-MUT vs ATSAMG55J19A-AU 对比
详细并排对比 ATSAMG55J19A-MUT 出自 Microchip Technology 和 ATSAMG55J19A-AU 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Microchip Technology
ATSAMG55J19A-MUT - 120MHz Cortex-M4 MCU 512KB Flash | Microchip
ATSAMG55J19A-MUT ✓ 量产中Microchip Technology
ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip
ATSAMG55J19A-AU ✓ 量产中规格对比
| 参数 | ATSAMG55J19A-MUT | ATSAMG55J19A-AU |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 分类 | Microcontrollers | Microcontrollers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.58 | $3.99 |
| Core Processor | ARM Cortex-M4 with FPU | — |
| Core Architecture | 32-bit RISC with DSP extensions | ARM Cortex-M4 with FPU |
| Maximum Clock Speed | 120 MHz | — |
| Program Memory (Flash) | 512 KB (512K x 8) | — |
| RAM Size | 176 KB | — |
| Supply Voltage (VDDIO) | 1.62 V to 3.6 V | — |
| 工作温度 | -40C to +85C (Industrial) | -40 C to +85 C (industrial) |
| 封装 | 64-pin QFN (7.5 x 7.5 mm) | 64-LQFP (10x10 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| I/O Count | [DATA_NEEDED: I/O pin count] | — |
| Communication Interfaces | I2C, SPI, UART/USART, USB, I2S | — |
| USB | USB 2.0 High-Speed with on-chip PHY | USB 2.0 Full-Speed device/host |
| ADC | [DATA_NEEDED: ADC channels/resolution] | 12-bit SAR |
| Package Type Code | QFN EP T/R (Tape and Reel) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Core Clock Speed (max) | — | 120 MHz |
| Instruction Set | — | 32-bit RISC + DSP extensions + FPU (single-precision) |
| Program Flash Memory | — | 512 KB (512K x 8) |
| SRAM (Total) | — | 160 KB |
| Backup SRAM with Retention | — | 16 KB (retained in deep sleep) |
| Supply Voltage (VDDIO/VDDCORE) | — | 1.62 V to 3.6 V |
| Audio Interface | — | I2S with PDM/TDM and sample-rate converter |
| Communication Peripherals | — | USART/UART, SPI, TWI (I2C), I2S, HS USB |
| External Bus Interface (EBI) | — | Yes (for SRAM/SDRAM/NOR Flash expansion) |
| Active Power Consumption | — | Down to 100 uA/MHz |
| Deep Sleep Current | — | Below 7 uA with SRAM retention |
| Wake-up Time (deep sleep to first instruction) | — | Down to 3 us |
| Lifecycle / New Design Recommendation | — | Active (new designs: consider ATSAMG55J19B Revision B) |