BFU520R vs BFU520AR 对比
详细并排对比 BFU520R 出自 NXP Semiconductors 和 BFU520AR 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BFU520R | BFU520AR |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | Transistors | Transistors |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.18 | $0.26 |
| 晶体管类型 | NPN wideband silicon RF BJT | NPN wideband silicon RF BJT |
| 集电极-发射极电压（Vceo） | 12 V | — |
| Collector Current (IC max) | 30 mA | — |
| 过渡频率（ft） | 10.5 GHz | 10 GHz |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| 封装 | SOT-143B (4-pin, dual-emitter, plastic) | SOT-23 (TO-236AB), 3-pin |
| 安装类型 | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | — |
| Application Class | Small signal to medium power | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -40C to +150C |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | [DATA_NEEDED: noise figure] |
| Gain | [DATA_NEEDED: gain] | — |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Continuous Collector Current (IC) | — | 30 mA |
| Total Power Dissipation (Ptot) | — | 450 mW |
| Qualification | — | AEC-Q101 (automotive qualified per distributor listing) |
| Product Family | — | BFU5 wideband RF transistor family |
| Intended Application Band | — | Small signal to medium power up to 2 GHz |
| Polarity | — | NPN |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |
| Packaging | — | Reel (R suffix, tape and reel) |